Patents by Inventor Fumio Mizuno

Fumio Mizuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4591574
    Abstract: An aluminum porcelain composition, is described, of the ternary Al.sub.2 O.sub.3 --CaO--TiO.sub.2 system, having a compositional range defined by points A, B, C, and D in the composition diagram set forth in the drawing, wherein the points A, B, C, and D represent the following molar fractions of Al.sub.2 O.sub.3, CaO, and TiO.sub.2 :______________________________________ Al.sub.2 O.sub.3 CaO TiO.sub.2 ______________________________________ point A 0.94 0.04 0.02 point B 0.81 0.14 0.05 point C 0.81 0.02 0.17 point D 0.94 0.01 0.05.
    Type: Grant
    Filed: February 21, 1985
    Date of Patent: May 27, 1986
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Minato Ando, Masaaki Ito, Fumio Mizuno
  • Patent number: 4585745
    Abstract: A dielectric ceramic composition, which has a high dielectric constant, low loss and stable temperature characteristics suited for the microwave frequency range, is obtained by the present invention. The dielectric ceramic composition according to the present invention is expressed as (Ba.sub.x Sr.sub.1-x)(Ni.sub.1/3 Nb.sub.2/3)O.sub.3 and with a mole fraction range of 0.ltoreq.x<1.
    Type: Grant
    Filed: December 14, 1984
    Date of Patent: April 29, 1986
    Assignee: NGK Spark Plug Co.
    Inventors: Tutomu Tunooka, Fumio Mizuno
  • Patent number: 4118794
    Abstract: A memory cell of a dynamic storage device is composed of a MOSFET and a capacitor. On a single semiconductor substrate, a plurality of such memory cells are regularly arranged so as to form a plurality of columns, with the result that they constitute a memory cell array or a memory cell mat. The capacitor for the memory cell is made up of a semiconductor region of the type which possesses a conductivity opposite to that of the semiconductor substrate, and a conductor film which is formed of polycrystalline silicon or the like on the semiconductor region through a comparatively thin insulating film. The areas of the capacitors in the memory cell column situated at an end portion of the memory cell mat are made larger than those of the capacitors of the memory cells at an inner or central portion of the memory cell mat. The memory cells at the end portion of the memory cell mat come to have information holding times equivalent to those of the memory cells at the central portion of the memory cell mat.
    Type: Grant
    Filed: November 15, 1977
    Date of Patent: October 3, 1978
    Assignee: Hitachi, Ltd.
    Inventors: Fumio Mizuno, Masamichi Ishihara
  • Patent number: 4039252
    Abstract: A field-effect liquid-crystal type display device employing a twisted alignment method is provided with a pair of electrode glass plates spaced apart from each other and a field-effect type liquid crystal with a positive dielectric anisotropy loaded in the space defined by the plates, the plates being disposed in such a manner that an angle formed by the alignment treatment directions of the plates is changed a proper angle from 90.degree., so that the twisting direction of molecules in the liquid crystal is unified and the liquid crystal type display device is improved to show homogeneity, and thus to reduce the number of dirty domains or spots in display.
    Type: Grant
    Filed: April 25, 1975
    Date of Patent: August 2, 1977
    Assignee: Energy Systems, Ltd.
    Inventors: Fumio Mizuno, Fumio Takeuchi, Shunsuke Kobayashi