Patents by Inventor Fumitake Kaneko

Fumitake Kaneko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090126855
    Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent.
    Type: Application
    Filed: January 12, 2009
    Publication date: May 21, 2009
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Naohisa Ueno
  • Publication number: 20090041948
    Abstract: It is disclosed a method of forming fine patterns comprising repeating plural times the following course of steps: covering a substrate having thereon photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between the adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent. The invention provides a method of forming fine patterns which has high ability to control pattern dimensions and provide fine patterns that have a satisfactory profile and satisfy the characteristics required of semiconductor devices, even in the case of employing a substrate having thick-film photoresist patterns in a thickness of about 1.0 ?m or more.
    Type: Application
    Filed: September 22, 2008
    Publication date: February 12, 2009
    Inventors: Hiroshi Shinbori, Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20090029297
    Abstract: It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely by way of bringing thusly treated substrate into contact with a remover solution for over 60 seconds.
    Type: Application
    Filed: September 18, 2008
    Publication date: January 29, 2009
    Inventors: Fumitake Kaneko, Yoshiki Sugeta, Toshikazu Tachikawa
  • Publication number: 20090011601
    Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a copolymer or a mixture of polyvinyl alcohol with a water-soluble polymer other than polyvinyl alcohol. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can effectively increase the shrinkage amount (the amount of heat shrinking) of the agent, thereby achieving a remarkably improved effect of forming or defining fine-line patterns and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.
    Type: Application
    Filed: September 8, 2008
    Publication date: January 8, 2009
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Kazumasa Wakiya
  • Publication number: 20080145539
    Abstract: It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely.
    Type: Application
    Filed: February 11, 2008
    Publication date: June 19, 2008
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20080026975
    Abstract: The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products.
    Type: Application
    Filed: April 20, 2005
    Publication date: January 31, 2008
    Inventors: Jun Koshiyama, Kazumasa Wakiya, Fumitake Kaneko, Atsushi Miyamoto, Hidekazu Tajima, Yoshihiro Sawada
  • Publication number: 20070218399
    Abstract: A method of producing a high-quality product without damaging the physical properties of a pattern to be formed by a rinsing process based on a principle totally different from that for a conventional pattern collapse preventing method. A method for forming a resist pattern by subjecting a photo-resist layer provided on a substrate to image-forming exposure and then developing the resultant layer, wherein the resist pattern is formed, after the developing process, by the process of reducing a contact angle with respect to a contact liquid on the surface of the resist pattern to up to 40 degrees, then by the process of increasing it to at least 70 degrees, and further by drying it.
    Type: Application
    Filed: April 20, 2005
    Publication date: September 20, 2007
    Applicant: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Jun Koshiyama, Kazumasa Wakiya, Fumitake Kaneko, Atsushi Miyamoto, Hidekazu Tajima, Yoshihiro Sawada
  • Publication number: 20070218412
    Abstract: A novel rinse solution for lithography to be used for suppressing contraction of a pattern and a method for forming a resist pattern using the rinse solution are provided, by reducing product surface defects of a photoresist pattern and providing the photoresist pattern with resistance to electronic beam irradiation. The rinse solution for lithography composed of a solution including a water-soluble resin having a nitrogen atom in a molecular structure is prepared. The resist pattern is formed with the rinse solution by performing (A) a process of providing a photoresist film on a board, (B) a process of selectively exposing the photoresist film through a mask pattern, (C) a process of performing post exposure bake (PEB), (D) a process of alkaline development, and (E) a process of treatment with the rinse solution for lithography.
    Type: Application
    Filed: April 20, 2005
    Publication date: September 20, 2007
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Jun Koshiyama, Kazumasa Wakiya, Fumitake Kaneko, Atsushi Miyamoto, Yoshihiro Sawada, Hidekazu Tajima
  • Publication number: 20070213447
    Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent.
    Type: Application
    Filed: April 24, 2007
    Publication date: September 13, 2007
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Naohisa Ueno
  • Patent number: 7235345
    Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having photoresist patterns thereon and allowed to shrink under heat so that the spacing between the adjacent photoresist patterns is lessened, further characterized by containing a water-soluble polymer and a surfactant. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices, being excellent in controlling the dimension of patterns.
    Type: Grant
    Filed: November 5, 2002
    Date of Patent: June 26, 2007
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20070141508
    Abstract: Disclosed is a negative resist composition which enables to form a resist pattern with improved shape properties by reducing roughness. Also disclosed is a method for forming a resist pattern using such a negative resist composition. The negative resist composition contains at least an alkali-soluble resin, a crosslinking agent which is crosslinked with the alkali-soluble resin by the action of an acid, and an onium salt as a photoacid generator. The anion component of the onium salt is composed of at least a sulfonate having a polycyclic structure.
    Type: Application
    Filed: January 24, 2005
    Publication date: June 21, 2007
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Fumitake Kaneko, Toshikazu Tachikawa
  • Patent number: 7189499
    Abstract: It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns with an over-coating agent for forming fine patterns, removing the unwanted over-coating agent that has been deposited on the edge portions and/or the back side of the substrate, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely. The invention provides a method of forming fine patterns which has high ability to control pattern dimensions and provide fine patterns that have a satisfactory profile and satisfy the characteristics required of semiconductor devices, with an additional capability of preventing the occurrence of particles which are a potential cause of device contamination.
    Type: Grant
    Filed: June 25, 2003
    Date of Patent: March 13, 2007
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20060263728
    Abstract: It is disclosed a method of forming fine patterns comprising repeating plural times the following course of steps: covering a substrate having thereon photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between the adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent. The invention provides a method of forming fine patterns which has high ability to control pattern dimensions and provide fine patterns that have a satisfactory profile and satisfy the characteristics required of semiconductor devices, even in the case of employing a substrate having thick-film photoresist patterns in a thickness of about 1.0 ?m or more.
    Type: Application
    Filed: July 27, 2006
    Publication date: November 23, 2006
    Inventors: Hiroshi Shinbori, Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20060258809
    Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a copolymer or a mixture of polyvinyl alcohol with a water-soluble polymer other than polyvinyl alcohol. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can effectively increase the shrinkage amount (the amount of heat shrinking) of the agent, thereby achieving a remarkably improved effect of forming or defining fine-line patterns and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.
    Type: Application
    Filed: July 17, 2006
    Publication date: November 16, 2006
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Kazumasa Wakiya
  • Publication number: 20060099347
    Abstract: The invention discloses improvements in the so-called coated thermal flow process for reducing the pattern dimension of a patterned resist layer on a substrate to accomplish increased fineness of resist patterning, in which a coating layer of a water-soluble resin formed on the patterned resist layer is heat-treated to effect thermal shrinkage of the coating layer with simultaneous reduction of the pattern dimension followed by removal of the coating layer by washing with water. The improvement of the process is obtained by using an aqueous coating solution admixed with a water-soluble amine compound such as triethanolamine in addition to a water-soluble resin such as a polyacrylic acid-based polymer.
    Type: Application
    Filed: December 19, 2005
    Publication date: May 11, 2006
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Patent number: 7033731
    Abstract: Disclosed is a novel multilayered body for photo-lithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
    Type: Grant
    Filed: July 29, 2004
    Date of Patent: April 25, 2006
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
  • Publication number: 20060079628
    Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a water-soluble polymer and a water-soluble fluorine compound (e.g. a fluoroalkyl alcohol or a fluoroalkyl carboxylic acid). Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can reduce microfoaming and defects to produce fine-line patterns that have good leveling and coating properties and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.
    Type: Application
    Filed: November 21, 2005
    Publication date: April 13, 2006
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20060003601
    Abstract: It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely.
    Type: Application
    Filed: August 22, 2005
    Publication date: January 5, 2006
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20050245663
    Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent.
    Type: Application
    Filed: April 28, 2005
    Publication date: November 3, 2005
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Naohisa Ueno
  • Publication number: 20050175926
    Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing either a water-soluble polymer and an amide group-containing monomer or a water-soluble polymer which contains at least (meth)acrylamide as a monomeric component. Also disclosed is a method of forming fine-line patterns using any one of said over-coating agents. According to the invention, the thermal shrinkage of the over-coating agent for forming fine patterns in the heat treatment can be extensively increased, and one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices.
    Type: Application
    Filed: June 26, 2003
    Publication date: August 11, 2005
    Applicant: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa