Patents by Inventor Fumitake Kaneko

Fumitake Kaneko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050058950
    Abstract: The invention discloses improvements in the so-called coated thermal flow process for reducing the pattern dimension of a patterned resist layer on a substrate to accomplish increased fineness of resist patterning, in which a coating layer of a water-soluble resin formed on the patterned resist layer is heat-treated to effect thermal shrinkage of the coating layer with simultaneous reduction of the pattern dimension followed by removal of the coating layer by washing with water. The improvement of the process is obtained by using an aqueous coating solution admixed with a water-soluble amine compound such as triethanolamine in addition to a water-soluble resin such as a polyacrylic acid-based polymer.
    Type: Application
    Filed: September 24, 2004
    Publication date: March 17, 2005
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Patent number: 6864036
    Abstract: Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound selected from the group consisting of iodonium salt compounds and sulfonium salt compounds, having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.
    Type: Grant
    Filed: January 24, 2002
    Date of Patent: March 8, 2005
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
  • Publication number: 20050009365
    Abstract: It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely.
    Type: Application
    Filed: October 24, 2003
    Publication date: January 13, 2005
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20050008972
    Abstract: Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
    Type: Application
    Filed: July 29, 2004
    Publication date: January 13, 2005
    Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
  • Patent number: 6811817
    Abstract: The invention discloses improvements in the so-called coated thermal flow process for reducing the pattern dimension of a patterned resist layer on a substrate to accomplish increased fineness of resist patterning, in which a coating layer of a water-soluble resin formed on the patterned resist layer is heat-treated to effect thermal shrinkage of the coating layer with simultaneous reduction of the pattern dimension followed by removal of the coating layer by washing with water. The improvement of the process is obtained by using an aqueous coating solution admixed with a water-soluble amine compound such as triethanolamine in addition to a water-soluble resin such as a polyacrylic acid-based polymer.
    Type: Grant
    Filed: December 10, 2002
    Date of Patent: November 2, 2004
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20040137377
    Abstract: A method for forming a fine pattern characterized by comprising a step for coating a substrate having a photoresist pattern with an agent for forming a fine pattern coating, a step for decreasing the intervals of the photoresist patterns by thermally shrinking the agent for forming a fine pattern coating through heat treatment, and a step for removing the agent for forming a fine pattern coating, the above steps being repeated a plurality of times. According to the inventive method for forming a fine pattern, a fine pattern having a good profile can be obtained even when a substrate having a thick-film photoresist patterns about 1.0 &mgr;m thick or above is employed while exhibiting excellent controllability of pattern dimensions and satisfying the characteristics required by a semiconductor device.
    Type: Application
    Filed: March 2, 2004
    Publication date: July 15, 2004
    Inventors: Hiroshi Shinbori, Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20040137378
    Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having photoresist patterns thereon and allowed to shrink under heat so that the spacing between the adjacent photoresist patterns is lessened, further characterized by containing a water-soluble polymer and a surfactant. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices, being excellent in controlling the dimension of patterns.
    Type: Application
    Filed: March 2, 2004
    Publication date: July 15, 2004
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20040121615
    Abstract: It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely by way of bringing thusly treated substrate into contact with a remover solution for over 60 seconds.
    Type: Application
    Filed: October 9, 2003
    Publication date: June 24, 2004
    Inventors: Fumitake Kaneko, Yoshiki Sugeta, Toshikazu Tachikawa
  • Publication number: 20040106737
    Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a copolymer or a mixture of polyvinyl alcohol with a water-soluble polymer other than polyvinyl alcohol. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can effectively increase the shrinkage amount (the amount of heat shrinking) of the agent, thereby achieving a remarkably improved effect of forming or defining fine-line patterns and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.
    Type: Application
    Filed: August 21, 2003
    Publication date: June 3, 2004
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Kazumasa Wakiya
  • Publication number: 20040067452
    Abstract: It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns with an over-coating agent for forming fine patterns, removing the unwanted over-coating agent that has been deposited on the edge portions and/or the back side of the substrate, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely. The invention provides a method of forming fine patterns which has high ability to control pattern dimensions and provide fine patterns that have a satisfactory profile and satisfy the characteristics required of semiconductor devices, with an additional capability of preventing the occurrence of particles which are a potential cause of device contamination.
    Type: Application
    Filed: June 25, 2003
    Publication date: April 8, 2004
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20040067303
    Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a water-soluble polymer and a water-soluble fluorine compound (e.g. a fluoro-alkyl alcohol or a fluoroalkyl carboxylic acid). Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can reduce microfoaming and defects to produce fine-line patterns that have good leveling and coating properties and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.
    Type: Application
    Filed: June 24, 2003
    Publication date: April 8, 2004
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20030096903
    Abstract: The invention discloses improvements in the so-called coated thermal flow process for reducing the pattern dimension of a patterned resist layer on a substrate to accomplish increased fineness of resist patterning, in which a coating layer of a water-soluble resin formed on the patterned resist layer is heat-treated to effect thermal shrinkage of the coating layer with simultaneous reduction of the pattern dimension followed by removal of the coating layer by washing with water. The improvement of the process is obtained by using an aqueous coating solution admixed with a water-soluble amine compound such as triethanolamine in addition to a water-soluble resin such as a polyacrylic acid-based polymer.
    Type: Application
    Filed: December 10, 2002
    Publication date: May 22, 2003
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20030087032
    Abstract: The invention discloses improvements in the so-called coated thermal flow process for reducing the pattern dimension of a patterned resist layer on a substrate to accomplish increased fineness of resist patterning, in which a coating layer of a water-soluble resin formed on the patterned resist layer is heat-treated to effect thermal shrinkage of the coating layer with simultaneous reduction of the pattern dimension followed by removal of the coating layer by washing with water. The improvement of the process is obtained by using an aqueous coating solution admixed with a water-soluble amine compound such as triethanolamine in addition to a water-soluble resin such as a polyacrylic acid-based polymer.
    Type: Application
    Filed: December 10, 2002
    Publication date: May 8, 2003
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Patent number: 6544712
    Abstract: The present invention provides a negative working resist composition comprising a diazosulfonic acid compound capable of generating an acid with irradiation of radiation and an organic amine compound. The negative working resist composition is excellent in sensitivity, resist pattern profile, and aging stability.
    Type: Grant
    Filed: October 22, 1999
    Date of Patent: April 8, 2003
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Miwa Miyairi, Masakazu Kobayashi
  • Publication number: 20030008968
    Abstract: The invention discloses improvements in the so-called coated thermal flow process for reducing the pattern dimension of a patterned resist layer on a substrate to accomplish increased fineness of resist patterning, in which a coating layer of a water-soluble resin formed on the patterned resist layer is heat-treated to effect thermal shrinkage of the coating layer with simultaneous reduction of the pattern dimension followed by removal of the coating layer by washing with water. The improvement of the process is obtained by using an aqueous coating solution admixed with a water-soluble amine compound such as triethanolamine in addition to a water-soluble resin such as a polyacrylic acid-based polymer.
    Type: Application
    Filed: June 19, 2002
    Publication date: January 9, 2003
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20020146645
    Abstract: Disclosed is a novel multilayered body for photolitho-graphic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising:
    Type: Application
    Filed: June 4, 2002
    Publication date: October 10, 2002
    Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
  • Patent number: 6455228
    Abstract: Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
    Type: Grant
    Filed: August 18, 2000
    Date of Patent: September 24, 2002
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
  • Patent number: 6406829
    Abstract: Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.
    Type: Grant
    Filed: August 15, 2000
    Date of Patent: June 18, 2002
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
  • Publication number: 20020061467
    Abstract: Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound selected from the group consisting of iodonium salt compounds and sulfonium salt compounds, having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.
    Type: Application
    Filed: January 24, 2002
    Publication date: May 23, 2002
    Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
  • Patent number: 6245930
    Abstract: Proposed is a novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity. Characteristically, the resist composition is formulated, as combined with a resinous ingredient which is subject to changes in the solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formula R1—C(CN)═N—O—SO2—R2, in which R1 is an inert organic group and R2 is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from the group consisting of polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic non-aromatic hydrocarbon groups such as a terpene or camphor residue.
    Type: Grant
    Filed: May 24, 1999
    Date of Patent: June 12, 2001
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Katsumi Oomori, Hideo Hada, Fumitake Kaneko, Mitsuru Sato, Kazufumi Sato, Toshimasa Nakayama