Patents by Inventor Gaku Furuta
Gaku Furuta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170092492Abstract: Embodiments of the disclosure generally provide methods of forming a silicon containing layer utilizing a deposition gas mixture with Ar gas dilution in a plasma enhanced chemical vapor deposition (PECVD) process for display devices. The silicon containing layer may be used as an insulating layer, a passivation layer, a gate dielectric layer, an etch stop layer, an interlayer insulator or other suitable layers in thin film transistor (TFT) devices, or other suitable display applications.Type: ApplicationFiled: October 8, 2015Publication date: March 30, 2017Inventors: Lai ZHAO, Gaku FURUTA, Soo Young CHOI, Tae Kyung WON, Takao HASHIMOTO
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Publication number: 20160305025Abstract: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.Type: ApplicationFiled: June 29, 2016Publication date: October 20, 2016Inventors: Soo Young CHOI, Robin L. TINER, Shinichi KURITA, John M. WHITE, Carl A. SORENSEN, Jeffrey A. KHO, Suhail ANWAR, Makoto INAGAWA, Gaku FURUTA
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Publication number: 20160240312Abstract: The present disclosure generally relates to capacitors having a multilayer dielectric material between two electrodes. The multilayer dielectric material can have a small thickness with little to no breakdown strength reduction. By utilizing a multilayer dielectric structure in a capacitor, not only can the breakdown strength remain at an acceptable level, but the collective thickness of the capacitor may be reduced to accommodate the higher density pixels for display devices or any device that utilizes a capacitor.Type: ApplicationFiled: December 15, 2015Publication date: August 18, 2016Inventors: Dapeng WANG, Yixuan WU, Gaku FURUTA, Tae Kyung WON, Beom Soo PARK
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Patent number: 9382621Abstract: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.Type: GrantFiled: February 4, 2010Date of Patent: July 5, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Soo Young Choi, Robin L. Tiner, Shinichi Kurita, John M. White, Carl A. Sorensen, Jeffrey A. Kho, Suhail Anwar, Makoto Inagawa, Gaku Furuta
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Patent number: 9299558Abstract: A method of depositing a film that includes heterogeneously seasoning a processing chamber is provided. After a processing chamber is cleaned, a heterogeneous seasoning deposition is performed to stabilize the deposition rate drift before a substrate may be positioned therein. A film, such as a SiOx film, may then be deposited on the substrate. The substrate may then be removed from the processing chamber and replaced with a second substrate. A film may then be deposited on the second substrate. The substrate positioning, deposition, and substrate removal cycle may be repeated until the cleaning cycle is complete. The processing chamber may be cleaned a second time, and another series of substrates may be similarly processed.Type: GrantFiled: March 21, 2014Date of Patent: March 29, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Lai Zhao, Gaku Furuta, Qunhua Wang, Soo Young Choi
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Patent number: 9243328Abstract: The present invention generally provides apparatus for supporting a large area substrate in a plasma reactor. One embodiment, a substrate support for using in a plasma reactor includes an electrically conductive body has a top surface with a plurality of roll-formed indents.Type: GrantFiled: March 19, 2009Date of Patent: January 26, 2016Assignee: Applied Materials, Inc.Inventors: Gaku Furuta, David Atchley, Soo Young Choi, John M. White
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Patent number: 9230796Abstract: Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.Type: GrantFiled: March 4, 2015Date of Patent: January 5, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Gaku Furuta, Soo Young Choi, Beom Soo Park, Young-jin Choi, Omori Kenji
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Patent number: 9187827Abstract: Embodiments of the present invention generally relates to substrate supports for use in a plasma processing chamber. The substrate supports, which are metallic, have ceramic inserts to prevent arcing between the substrate support and the shadow frame used to protect the edges of the substrate support during processing. In large area substrate processing chambers, the shadow frame may comprise multiple pieces. The individual pieces may be coupled together, but spaced slightly apart by a gap to permit thermal expansion. Ceramic inserts are positioned on the substrate support so that when a shadow frame is positioned adjacent thereto, the ceramic inserts are located adjacent the gaps in the shadow frame. The ceramic inserts adjacent the gap prevent and/or reduce the arcing because the gaps are located over electrically insulating material rather than electrically conductive material.Type: GrantFiled: February 21, 2013Date of Patent: November 17, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Gaku Furuta, John M. White, Shinichi Kurita, Soo Young Choi, Suhail Anwar, Robin L. Tiner
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Publication number: 20150273490Abstract: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.Type: ApplicationFiled: May 29, 2015Publication date: October 1, 2015Inventors: Jozef KUDELA, Jonghoon BAEK, John M. WHITE, Robin TINER, Suhail ANWAR, Gaku FURUTA
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Publication number: 20150270107Abstract: A method of depositing a film that includes heterogeneously seasoning a processing chamber is provided. After a processing chamber is cleaned, a substrate may be positioned therein. A film, such as a SiOx film, may then be deposited on the substrate. The substrate may then be removed from the processing chamber and replaced with a second substrate. A film may then be deposited on the second substrate. The substrate positioning, deposition, and substrate removal cycle may be repeated until the cleaning cycle is complete. The processing chamber may be cleaned a second time, and another series of substrates may be similarly processed.Type: ApplicationFiled: March 21, 2014Publication date: September 24, 2015Inventors: Lai ZHAO, Gaku FURUTA, Qunhua WANG, Soo Young CHOI
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Publication number: 20150211120Abstract: The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.Type: ApplicationFiled: January 30, 2015Publication date: July 30, 2015Inventors: Lai ZHAO, Gaku FURUTA, Qunhua WANG, Robin L. TINER, Beom Soo PARK, Soo Young CHOI, Sanjay D. YADAV
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Patent number: 9068262Abstract: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.Type: GrantFiled: May 18, 2011Date of Patent: June 30, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Jozef Kudela, Jonghoon Baek, John M. White, Robin Tiner, Suhail Anwar, Gaku Furuta
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Publication number: 20150179426Abstract: Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.Type: ApplicationFiled: March 4, 2015Publication date: June 25, 2015Inventors: Gaku FURUTA, Soo Young CHOI, Beom Soo PARK, Young-jin CHOI, Omori KENJI
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Publication number: 20150114948Abstract: The present invention generally relates to a substrate support for use in a processing chamber. The substrate support is divided into quadrants with each quadrant capable of heating independent of the other quadrants. The independent heating permits the substrate support to provide different heating to either different substrate simultaneously disposed on the substrate support or to different areas of a common substrate. Thus, the substrate heating may be tailored to ensure desired processing of the substrate or substrates occurs.Type: ApplicationFiled: October 2, 2014Publication date: April 30, 2015Inventors: Robin L. TINER, Soo Young CHOI, Beom Soo PARK, Shinichi KURITA, Bora OH, Gaku FURUTA
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Patent number: 8999847Abstract: Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.Type: GrantFiled: August 10, 2011Date of Patent: April 7, 2015Assignee: Applied Materials, Inc.Inventors: Gaku Furuta, Soo Young Choi, Beom Soo Park, Young-jin Choi, Omori Kenji
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Patent number: 8877301Abstract: An asymmetrically grounded susceptor used in a plasma processing chamber for chemical vapor deposition onto large rectangular panels supported on and grounded by the susceptor. A plurality of grounding straps are connected between the periphery of the susceptor to the grounded vacuum chamber to shorten the grounding paths for RF electrons. Flexible straps allow the susceptor to vertically move. The straps provide a conductance to ground which is asymmetric around the periphery. The straps may be evenly spaced but have different thicknesses or different shapes or be removed from available grounding point and hence provide different RF conductances. The asymmetry is selected to improve the deposition uniformity and other qualities of the PECVD deposited film.Type: GrantFiled: June 6, 2011Date of Patent: November 4, 2014Assignee: Applied Materials, Inc.Inventors: Gaku Furuta, Soo Young Choi, Young-Jin Choi
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Publication number: 20140251216Abstract: Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.Type: ApplicationFiled: March 7, 2013Publication date: September 11, 2014Inventors: Qunhua WANG, Soo Young CHOI, Robin L. TINER, John M. WHITE, Gaku FURUTA, Beom Soo PARK
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Patent number: D713200Type: GrantFiled: August 31, 2012Date of Patent: September 16, 2014Assignee: Applied Materials, Inc.Inventors: Gaku Furuta, John M. White, Robin L. Tiner, Suhail Anwar, Soo Young Choi
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Patent number: D716098Type: GrantFiled: June 23, 2014Date of Patent: October 28, 2014Assignee: Applied Materials, Inc.Inventors: Gaku Furuta, John M. White, Robin L. Tiner, Suhail Anwar, Soo Young Choi, Shinichi Kurita
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Patent number: D717113Type: GrantFiled: March 13, 2013Date of Patent: November 11, 2014Assignee: Applied Materials, Inc.Inventors: Gaku Furuta, John M. White, Robin L. Tiner, Suhail Anwar, Soo Young Choi