Abstract: In a first aspect, silicon polymers are provided that have controlled ratio of silanol (Si—OH) moieties:Si atoms and/or a controlled amount of alkaline aqueous-solubilizing groups. Si-polymers of the invention are particularly useful as a photoresist resin component. In a further aspect, halogenated sulfonamide and thiol compounds and Si-containing polymers comprising such reacted monomers are provided.

Abstract: Multilayer photoresist systems are provided. In particular aspects, the invention relates to underlayer composition for an overcoated photoresist, particularly an overcoated silicon-containing photoresist that is imaged at short exposure wavelengths.

Abstract: New photoresists are provided that can be applied and imaged with reduced undesired outgassing and/or as thick coating layers. Preferred resists of the invention are chemically-amplified positive-acting resists that contain photoactive and resin components.

Abstract: Provided are new resins that comprise carbocyclic aryl units with hetero substitution units and photoresists that contain such resins. Particularly preferred photoresists of the invention comprise a deblocking resin that contains hydroxy naphthyl units and can be effectively imaged with sub-200 nm radiation such as 193 nm radiation.

Abstract: The invention includes new Si-containing monomers, polymers containing such monomers and photoresists that contain the polymers. Synthetic methods of the invention include reacting a vinyl carbocyclic aryl ester compound with a reactive silane compound to provide the monomer.

Abstract: New negative-acting photoresist compositions are provided that are particularly useful for imaging at short wavelengths, particularly sub-200 nm wavelengths such as 193 nm. Resists of the invention provide contrast between exposed and unexposed coating layer regions through crosslinking or other solubility switching mechanism. Preferred resists of the invention include a resin component that contains repeat units that facilitate aqueous base solubility.

Abstract: The invention includes new polymers and methods for providing such polymers and photoresists that comprises the polymers. Methods of the invention include those that comprise providing a reaction mixture and adding over the course of a polymerization reaction one or more polymerization reagents to the reaction mixture to provide the polymer. Photoresists containing a polymer of the invention can exhibit significantly improved lithographic properties.

Abstract: Photoresist compositions that contain one or more components having sulfonamide and Si substitution. Preferred photoresist compositions of the invention contain an Si-polymer such as a silsesquioxane that has sulfonamide substitution and may be employed in multilayer resist systems. In preferred aspects, the Si-polymer has both sulfonamide substitution as well as moieties that can provide contrast upon exposure to photogenerated acid.

Abstract: Disclosed are spirocyclic olefin polymers, methods of preparing spirocyclic olefin polymers, photresist compositions including spirocyclic olefin resin binders and methods of forming relief images using such photoresist compositions.

Abstract: The invention includes polymers that contain a heterocyclic ring, preferably an oxygen- or sulfur-containing ring. The heterocyclic ring is preferably fused to the polymer backbone. The invention also provides photoresists that contain such polymers, particularly for imaging at short wavelengths such as sub-200 nm.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

Abstract: The present invention relates to new polymers that contain photoacid-labile groups that comprise arylalkyl groups. Particularly preferred are polymers having a benzylic carbon directly linked to an ester oxygen. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.

Abstract: The present invention provides novel alicyclic-esterified norbornene carboxylates monomers, polymers and photoresist compositions that comprise the polymers as a resin binder component. Methods for synthesis of the monomers and polymers of the invention are also provided. The photoresist compositions of the invention can provide highly resolved relief images upon exposure to short wavelengths, including sub-300 and sub-200 nm wavelengths such as 193 nm and 157 nm.

Abstract: New methods are provided for synthesis of polysiloxanes (silsesquioxanes) and photoresists comprising same. Synthetic methods of the invention include use of a polymerization templating reagent that has multiple reactive nitrogen groups, particularly a diamine reagent.

Abstract: The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions (“ARCs”), including for deep UV applications. The antireflective compositions of the invention are particularly useful where a planarizing coating layer is required. ARCs of the invention contain a low molecular weight resin, a plasticizer compound and/or a low Tg resin. The invention also includes methods for applying forming planarizing ARC coating layers.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

Abstract: The invention includes polymers that contain a polymers of the invention contain one or more 1) carbonate units and/or 2) a lactone provided by a monomer having a ring oxygen adjacent to the monomer vinyl group. The invention also provides photoresists that contain such polymers, particularly for imaging at short wavelengths such as sub-200 nm.

Abstract: The invention includes new polymers and methods for providing such polymers and photoresists that comprises the polymers. Methods of the invention include those that comprise providing a reaction mixture and adding over the course of a polymerization reaction one or more polymerization reagents to the reaction mixture to provide the polymer. Photoresists containing a polymer of the invention can exhibit significantly improved lithographic properties.

Abstract: Multilayer photoresist systems are provided. In particular aspects, the invention relates to underlayer composition for an overcoated photoresist, particularly an overcoated silicon-containing photoresist that is imaged at short exposure wavelengths.

Abstract: The invention includes new polymers and methods for providing such polymers and photoresists that comprises the polymers. Methods of the invention include those that comprise providing a reaction mixture and adding over the course of a polymerization reaction one or more polymerization reagents to the reaction mixture to provide the polymer. Photoresists containing a polymer of the invention can exhibit significantly improved lithographic properties.