Abstract: Multilayer photoresist systems are provided. In particular aspects, the invention relates to underlayer composition for an overcoated photoresist, particularly an overcoated silicon-containing photoresist. Preferred underlayer compositions comprise one or more resins or other components that impart etch-resistant and antireflective properties, such as one or more resins that contain phenyl or other etch-resistant groups and anthracene or other moieties that are effective anti-reflective chromophores for photoresist exposure radiation.

Abstract: Photoresist compositions are provided that comprises one or more photoacid generator compounds and a silsesquioxane resin. Preferred photoresists of the invention can exhibit reduced outgassing when exposed to laser radiation, including ArF exposures.

Abstract: Photoimageable compositions are provided that contain Si-polymers that have a specified ratio of fluorine atoms to Si atoms. Preferred photoresists of the invention can exhibit enhanced resistance to plasma etchants.

Abstract: In a first aspect, silicon polymers are provided that have controlled ratio of silanol (Si—OH) moieties:Si atoms and/or a controlled amount of alkaline aqueous-solubilizing groups. Si-polymers of the invention are particularly useful as a photoresist resin component. In a further aspect, halogenated sulfonamide and thiol compounds and Si-containing polymers comprising such reacted monomers are provided.

Abstract: Disclosed are photoimageable compositions containing silsesquioxane binder polymers and photoactive compounds, methods of forming relief images using such compositions and methods of manufacturing electronic devices using such compositions. Such compositions are useful as photoresists and in the manufacture of optoelectronic devices.

Abstract: Photoresist compositions that contain one or more components having sulfonamide and Si substitution. Preferred photoresist compositions of the invention contain an Si-polymer such as a silsesquioxane that has sulfonamide substitution and may be employed in multilayer resist systems. In preferred aspects, the Si-polymer has both sulfonamide substitution as well as moieties that can provide contrast upon exposure to photogenerated acid.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

Abstract: Provided are new resins that comprise carbocyclic aryl units with hetero substitution units and photoresists that contain such resins. Particularly preferred photoresists of the invention comprise a deblocking resin that contains hydroxy naphthyl units and can be effectively imaged with sub-200 nm radiation such as 193 nm radiation.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

Abstract: The invention includes polymers that contain a heterocyclic ring, preferably an oxygen-or sulfur-containing ring. The heterocyclic ring is preferably fused to the polymer backbone. The invention also provides photoresists that contain such polymers, particularly for imaging at short wavelengths such as sub-200 nm.

Abstract: The invention provides phenolic polymers, and methods for synthesis and photoresists that comprise such polymers. Synthetic methods of the invention include providing a polymer that contains esterified meta-phenolic units, and removing the ester group preferably by hydrolysis to provide a polymer with meta-phenolic units.

Abstract: New photoresists are provided that are suitable for short wavelength imaging, including sub-200 nm, particularly 193 nm. Resists of the invention contain a polymer that comprises fluoro substitution and alicyclic leaving groups, such may be provided by polymerization of an alkyl acrylate compound.

Abstract: New negative-acting photoresist compositions are provided that are particularly useful for imaging at short wavelengths, particularly sub-200 nm wavelengths such as 193 run. Resists of the invention provide contrast between exposed and unexposed coating layer regions through crosslinking or other solubility switching mechanism. Preferred resists of the invention include a resin component that contains repeat units that facilitate aqueous base solubility.

Abstract: The present invention relates to new polymers that contain photoacid-labile groups that comprise arylalkyl groups. Particularly preferred are polymers having a benzylic carbon directly linked to an ester oxygen. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.

Abstract: The invention includes polymers that contain a heterocyclic ring, preferably an oxygen- or sulfur-containing ring. The heterocyclic ring is preferably fused to the polymer backbone. The invention also provides photoresists that contain such polymers, particularly for imaging at short wavelengths such as sub-200 nm.

Abstract: New methods are provided for synthesis of polysiloxanes (silsesquioxanes) and photoresists comprising same. Synthetic methods of the invention include use of a polymerization templating reagent that has multiple reactive nitrogen groups, particularly a diamine reagent.

Abstract: The invention includes new Si-containing monomers, polymers containing such monomers and photoresists that contain the polymers. Synthetic methods of the invention include reacting a vinyl carbocyclic aryl ester compound with a reactive silane compound to provide the monomer.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

Abstract: The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.