Patents by Inventor Gerd Pfeiffer
Gerd Pfeiffer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130244348Abstract: Methods are provided for fine tuning substrate resistivity. The method includes measuring a resistivity of a substrate after an annealing process, and fine tuning a subsequent annealing process to achieve a target resistivity of the substrate. The fine tuning is based on the measured resistivity.Type: ApplicationFiled: March 15, 2012Publication date: September 19, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Jeffrey P. GAMBINO, Derrick LIU, Dale W. MARTIN, Gerd PFEIFFER
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Patent number: 8536035Abstract: Silicon-on-insulator (SOI) structures and related methods of forming such structures. In one case, a method includes providing a silicon-on-insulator (SOI) handle substrate having: a substantially uniform resistivity profile along a depth of the handle substrate; and an interstitial oxygen (Oi) concentration of less than approximately 10 parts per million atoms (ppma). The method further includes counter-doping a surface region of the handle, causing the surface region to have a resistivity greater than approximately 3 kOhm-cm, and joining the surface region of the handle substrate with a donor wafer.Type: GrantFiled: February 1, 2012Date of Patent: September 17, 2013Assignee: International Business Machines CorporationInventors: Alan B. Botula, Mark D. Jaffe, Alvin J. Joseph, Kenneth F. McAvey, Gerd Pfeiffer, Richard A. Phelps
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Patent number: 8535970Abstract: The invention relates to a manufacturing process of a photovoltaic solar cell (100) comprising: providing high doped areas (20) on the rear side (18) of the photovoltaic solar cell (100), providing localized metal contacts (30) localized on said high doped areas (20), providing a passivation layer (50) covering a surface (52) between said contacts (30), wherein the contacts (30) remain substantially free of the passivation layer (50), and depositing a metal layer (32) for a back surface field.Type: GrantFiled: June 6, 2011Date of Patent: September 17, 2013Assignee: International Business Machines CorporationInventors: Ranier Krauser, Lawrence A. Clevenger, Kevin Prettyman, Brian Christopher Sapp, Kevin S. Petrarca, Harold John Hovel, Gerd Pfeiffer, Zhengwen Li, Carl John Radens
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Publication number: 20130196493Abstract: Silicon-on-insulator (SOI) structures and related methods of forming such structures. In one case, a method includes providing a silicon-on-insulator (SOI) handle substrate having: a substantially uniform resistivity profile along a depth of the handle substrate; and an interstitial oxygen (Oi) concentration of less than approximately 10 parts per million atoms (ppma). The method further includes counter-doping a surface region of the handle, causing the surface region to have a resistivity greater than approximately 3 kOhm-cm, and joining the surface region of the handle substrate with a donor wafer.Type: ApplicationFiled: February 1, 2012Publication date: August 1, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Alan B. Botula, Mark D. Jaffe, Alvin J. Joseph, Kenneth F. McAvey, Gerd Pfeiffer, Richard A. Phelps
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Patent number: 8486751Abstract: A method of manufacturing a photovoltaic cell using a semiconductor wafer having a front side and a rear side, wherein the photovoltaic cell produces electricity when the front side of the semiconductor wafer is illuminated.Type: GrantFiled: November 23, 2010Date of Patent: July 16, 2013Assignee: International Business Machines CorporationInventors: Lawrence A. Clevenger, Harold J. Hovel, Rainer Klaus Krause, Kevin S. Petrarca, Gerd Pfeiffer, Kevin M. Prettyman, Brian C. Sapp
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Patent number: 8372725Abstract: Structures and methods are provided for forming pre-fabricated deep trench capacitors for SOI substrates. The method includes forming a trench in a substrate and forming a dielectric material in the trench. The method further includes depositing a conductive material over the dielectric material in the trench and forming an insulator layer over the conductive material and the substrate.Type: GrantFiled: February 23, 2010Date of Patent: February 12, 2013Assignee: International Business Machines CorporationInventors: Robert Hannon, Subramanian S. Iyer, Gerd Pfeiffer, Ravi M. Todi, Kevin R. Winstel
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Publication number: 20130009277Abstract: A structure and method for forming isolation and a buried plate for a trench capacitor is disclosed. Embodiments of the structure comprise an epitaxial layer serving as the buried plate, and a bounded deep trench isolation area serving to isolate one or more deep trench structures. Embodiments of the method comprise angular implanting of the deep trench isolation area to form a P region at the base of the deep trench isolation area that serves as an anti-punch through implant.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: International Business Machines CorporationInventors: Abhishek Dube, Subramanian S. Iyer, Babar Ali Khan, Oh-jung Kwon, Junedong Lee, Paul C. Parries, Chengwen Pei, Gerd Pfeiffer, Ravi M. Todi, Geng Wang
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Patent number: 8298908Abstract: A structure and method for forming isolation and a buried plate for a trench capacitor is disclosed. Embodiments of the structure comprise an epitaxial layer serving as the buried plate, and a bounded deep trench isolation area serving to isolate one or more deep trench structures. Embodiments of the method comprise angular implanting of the deep trench isolation area to form a P region at the base of the deep trench isolation area that serves as an anti-punch through implant.Type: GrantFiled: February 11, 2010Date of Patent: October 30, 2012Assignee: International Business Machines CorporationInventors: Abhishek Dube, Subramanian S. Iyer, Babar Ali Khan, Oh-jung Kwon, Junedong Lee, Paul C. Parries, Chengwen Pei, Gerd Pfeiffer, Ravi M. Todi, Geng Wang
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Publication number: 20120160295Abstract: A method for characterizing the electronic properties of a solar cell to be used in a photovoltaic module comprises the steps of performing a room temperature IV curve measurement of the solar cell and classifying the solar cell based on this IV curve measurement. In order to take stress-related effects into account, the solar cells are reclassified depending on the result of an additional measurement conducted on the solar cells under stress. This stress-related measurement may be gained from light induced thermography (LIT) yielding information on diode shunt areas within the solar cell.Type: ApplicationFiled: June 24, 2011Publication date: June 28, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Lawrence A. Clevenger, Harold J. Hovel, Rainer Klaus Krause, Kevin S. Petrarca, Gerd Pfeiffer, Kevin Prettyman, Brian C. Sapp
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Patent number: 8197912Abstract: A method for manufacturing thin film panels comprises providing a laser patterning system, depositing a base layer on a glass substrate, separating the base layer by scribing a plurality of separation lines corresponding with a predefined scribe pattern, depositing a functional layer on the base layer, determining a first base layer separation edge, moving the translation stage by a first distance, activating the laser array and moving the translation stage by a second distance, deactivating the laser array, determining subsequent separation edges of the base layer and scribing lines therein, depositing a top layer on the functional layer, determining a first functional layer separation edge, operating the stepper motor to move the translation stage by a third distance, activating the laser array and moving the translation stage by a fourth distance, deactivating the laser array, and determining subsequent separation edges of the functional layer and scribing lines therein.Type: GrantFiled: March 12, 2009Date of Patent: June 12, 2012Assignee: International Business Machines CorporationInventors: Rainer Krause, Gerd Pfeiffer
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Publication number: 20110318865Abstract: The invention relates to a manufacturing process of a photovoltaic solar cell (100) comprising: providing high doped areas (20) on the rear side (18) of the photovoltaic solar cell (100), providing localized metal contacts (30) localized on said high doped areas (20), providing a passivation layer (50) covering a surface (52) between said contacts (30), wherein the contacts (30) remain substantially free of the passivation layer (50), and depositing a metal layer (32) for a back surface field.Type: ApplicationFiled: June 6, 2011Publication date: December 29, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ranier Krauser, Lawrence A. Clevenger, Kevin Prettyman, Brian Christopher Sapp, Kevin S. Petrarca, Harold John Hovel, Gerd Pfeiffer, Zhengwen Li, Carl John Radens
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Publication number: 20110316343Abstract: A photovoltaic module (10) comprises a plurality of solar cells (20) interconnected in serial arrays (15). At least some of the solar cells (20) are equipped with control units (30) comprising at least one thermal sensor (42) and one power sensor (43). The control unit (30) comprises means (35) for removing a specific solar cell (20?) from the photovoltaic module (10) network if said solar cell (20?) is found to have reached a predefined level of degradation. In a preferred embodiment, control unit (30) is an ASIC chip (40) in thermal contact with said solar cell (20) and electrically connected to said solar cell (20).Type: ApplicationFiled: June 6, 2011Publication date: December 29, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ranier Krauser, Lawrence A. Clevenger, Kevin Prettyman, Brian Christopher Sapp, Kevin S. Petrarca, Harold John Hovel, Gerd Pfeiffer, Zhengwen Li, Carl John Radens
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Publication number: 20110317324Abstract: A photovoltaic module (10) with a plurality of solar cells (20) interconnected in serial and/or parallel arrangement within the module (10) is equipped with an overheat protection system (30) for suppressing damages of the photovoltaic module (10) due to defects of the solar cells (20). The overheat protection system (30) comprises a heat sensor (32) which is thermally coupled to a solar cell (20). The heat sensor (32) is physically integrated into an electrical switch (34, 36, 38) which is electrically connected to said solar cell (20).Type: ApplicationFiled: June 23, 2011Publication date: December 29, 2011Applicant: International Business Machines CorporationInventors: Lawrence A. Clevenger, Harold J. Hovel, Rainer Krause, Zhengwen Li, Kevin S. Petrarca, Gerd Pfeiffer, Kevin Prettyman, Carl J. Radens, Brian C. Sapp
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Publication number: 20110204524Abstract: Structures and methods are provided for forming pre-fabricated deep trench capacitors for SOI substrates. The method includes forming a trench in a substrate and forming a dielectric material in the trench. The method further includes depositing a conductive material over the dielectric material in the trench and forming an insulator layer over the conductive material and the substrate.Type: ApplicationFiled: February 23, 2010Publication date: August 25, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Robert HANNON, Subramanian S. IYER, Gerd PFEIFFER, Ravi M. TODI, Kevin R. WINSTEL
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Publication number: 20110193193Abstract: A structure and method for forming isolation and a buried plate for a trench capacitor is disclosed. Embodiments of the structure comprise an epitaxial layer serving as the buried plate, and a bounded deep trench isolation area serving to isolate one or more deep trench structures. Embodiments of the method comprise angular implanting of the deep trench isolation area to form a P region at the base of the deep trench isolation area that serves as an anti-punch through implant.Type: ApplicationFiled: February 11, 2010Publication date: August 11, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Abhishek Dube, Subramanian S. Iyer, Babar Ali Khan, Oh-jung Kwon, Junedong Lee, Paul C. Parries, Chengwen Pei, Gerd Pfeiffer, Ravi M. Todi, Geng Wang
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Publication number: 20110180896Abstract: A method of forming a bonded wafer structure includes providing a first semiconductor wafer substrate having a first silicon oxide layer at the top surface of the first semiconductor wafer substrate; providing a second semiconductor wafer substrate; forming a second silicon oxide layer on the second semiconductor wafer substrate; forming a silicon nitride layer on the second silicon oxide layer; and bringing the first silicon oxide layer of the first semiconductor wafer substrate into physical contact with the silicon nitride layer of the second semiconductor wafer substrate to form a bonded interface between the first silicon oxide layer and the silicon nitride layer. Alternatively, a third silicon oxide layer may be formed on the silicon nitride layer before bonding. A bonded interface is then formed between the first and third silicon oxide layers. A bonded wafer structure formed by such a method is also provided.Type: ApplicationFiled: January 25, 2010Publication date: July 28, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Gerd Pfeiffer, Haizhou Yin, Edmund J. Sprogis, Subramanian Iyer, Zhibin Ren, Dae-Gyu Park, Oleg Gluschenkov
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Publication number: 20110120519Abstract: A method of manufacturing a photovoltaic cell using a semiconductor wafer having a front side and a rear side, wherein the photovoltaic cell produces electricity when the front side of the semiconductor wafer is illuminated.Type: ApplicationFiled: November 23, 2010Publication date: May 26, 2011Applicant: International Business Machines CorporationInventors: Lawrence A. Clevenger, Harlod J. Hovel, Rainer Klaus Krause, Kevin S. Petrarca, Gerd Pfeiffer, Kevin M. Prettyman, Brian C. Sapp
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Publication number: 20110100451Abstract: A silicon solar cell is manufactured by providing a carrier plate, and by applying a first contact pattern to the carrier plate. The first contact pattern includes a set of first laminar contacts. The silicon solar cell is further manufactured by applying a multitude of silicon slices to the first contact pattern, and by applying a second contact pattern to the multitude of silicon slices. Each first laminar contact of the set of first laminar contacts is in spatial laminar contact with maximally two silicon slices. The second contact pattern includes a set of second laminar contacts. Each second laminar contact of the set of second laminar contacts is in spatial laminar contact with maximally two silicon slices.Type: ApplicationFiled: January 13, 2009Publication date: May 5, 2011Inventors: Rainer Klaus Krause, Gerd Pfeiffer, Hans-Juergen Eickelmann, Thorsten Muehge
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Publication number: 20110100412Abstract: A photovoltaic module and a method of manufacturing such a module in which metal is deposited in a pattern on the front side of a semiconductor wafer which acts as an electrode. Photovoltaic cells manufactured using a semiconductor wafer typically have a P type semiconductor region and an N type semiconductor region. The metal on the front side of each of the photovoltaic cells forms an electrical connection to the doped layer of the semiconductor wafer on its front side.Type: ApplicationFiled: June 29, 2010Publication date: May 5, 2011Applicant: International Business Machines CorporationInventors: Lawrence A. Clevenger, Rainer Krause, Karl-Heinz Lehnert, Gerd Pfeiffer, Kevin Prettyman
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Publication number: 20110100420Abstract: An apparatus, system, and method are disclosed for a photovoltaic module, the photovoltaic module comprising a plurality of photovoltaic cells, a controllable infrared protection layer, and a protection switching means. The controllable infrared protection layer is for reducing the infrared radiation absorbed by the photovoltaic module, where the controllable infrared protection layer has a first state and a second state. When the infrared protection layer is in the first state the transmission of infrared radiation to the photovoltaic cells is higher than when the infrared protection layer is in the second state. The protection switching means is for switching the controllable infrared protection layer between the first state and the second state.Type: ApplicationFiled: September 21, 2010Publication date: May 5, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Lawrence A. Clevenger, Timothy J. Dalton, Maxime Darnon, Rainer Krause, Gerd Pfeiffer, Kevin Prettyman, Carl J. Radens, Brian C. Sapp