Abstract: A method for manufacturing a photovoltaic solar cell device includes the following. A p-n junction having a first doping density is formed. Formation of the p-n junction is enhanced by introducing a second doping density to form high doped areas for a dual emitter application. The high doped areas are defined by a masking process integrated with the formation of the p-n junction, resulting in a mask pattern of the high doped areas. A metallization of the high doped areas occurs in accordance with the mask pattern of the high doped areas.

Abstract: An apparatus, system, and method are disclosed for restoring efficiency of a photovoltaic cell. An illumination module illuminates photovoltaic cells so the cells receive a time integrated irradiance equivalent to at least 5 hours of solar illumination. After illumination, an annealing module anneals the photovoltaic cells at a temperature above 90 degrees Celsius for a minimum of 10 minutes. In one embodiment, the illumination module illuminates the photovoltaic cells for a time integrated irradiance equivalent to at least 20 hours of solar illumination. In another embodiment, the illumination module illuminates the photovoltaic cells for a time integrated irradiance equivalent to at least 16 hours of solar illumination while being heated to at least 50 degrees Celsius. In another embodiment, a solar concentrator irradiates the photovoltaic cells in sunlight for at least 10 hours and increases the irradiance of solar illumination on the cells by a factor of 2 to 5.

Abstract: A method of forming a semiconductor-on-insulator (SOI) substrate using a thermal annealing process to provide a semiconductor base wafer having a thin high resistivity surface layer that is positioned at the interface with the buried insulating layer is provided. Specifically, the inventive method fabricates an a semiconductor-on-insulator (SOI) substrate having an SOI layer and a semiconductor base wafer that are separated, at least in part, by a buried insulating layer, wherein the semiconductor base wafer includes a high resistivity (HR) surface layer located on a lower resistivity semiconductor portion of the semiconductor base wafer, and the HR surface layer forms an interface with the buried insulating layer.

Abstract: A method for manufacturing thin film panels comprises providing a laser patterning system, depositing a base layer on a glass substrate, separating the base layer by scribing a plurality of separation lines corresponding with a predefined scribe pattern, depositing a functional layer on the base layer, determining a first base layer separation edge, moving the translation stage by a first distance, activating the laser array and moving the translation stage by a second distance, deactivating the laser array, determining subsequent separation edges of the base layer and scribing lines therein, depositing a top layer on the functional layer, determining a first functional layer separation edge, operating the stepper motor to move the translation stage by a third distance, activating the laser array and moving the translation stage by a fourth distance, deactivating the laser array, and determining subsequent separation edges of the functional layer and scribing lines therein.

Abstract: A method of backside contacting of thin layer photovoltaic cells having Si elements as well as thin film cells, like CIGS, is provided, including the following steps: providing a p-n-junction including a thin n-doped Si layer and a thin p-doped Si layer bonded on top of said n-doped Si layer; bonding said p-n-junction to a glass substrate; preparing contact points on said structured thin p-doped Si layer and said thin n-doped Si layer; and creating contact pins on said structured thin p-doped Si layer and said thin n-doped Si layer.

Abstract: A method of forming a semiconductor-on-insulator (SOI) substrate using a thermal annealing process to provide a semiconductor base wafer having a thin high resistivity surface layer that is positioned at the interface with the buried insulating layer is provided. Specifically, the inventive method fabricates an a semiconductor-on-insulator (SOI) substrate having an SOI layer and a semiconductor base wafer that are separated, at least in part, by a buried insulating layer, wherein the semiconductor base wafer includes a high resistivity (HR) surface layer located on a lower resistivity semiconductor portion of the semiconductor base wafer, and the HR surface layer forms an interface with the buried insulating layer.

Abstract: A method for the manufacture of solar panels from scrapped wafers and/or scrapped dies is provided, including the following steps: identifying scrap wafers and/or scrap dies; cleaning and removing remaining structures from the surface of the wafers/dies; grinding both surfaces of the wafers/dies down to a required thickness; doping the wafers/dies; and further processing the wafers/dies using a solar panel manufacturing method.

Abstract: A package for the transportation of contamination vulnerable articles is provided, comprising a closeable plastic container which is loaded with the respective articles, a first bag made from plastic surrounding said container, and a second bag made from plastic wrapping said first bag, wherein said first bag is provided with a valve-filter arrangement in order to allow a controlled air stream into said first bag when opening said valve-filter arrangement.

Abstract: The invention provides methods for methylating a gene of interest in a cell. The methods include exposing a mammalian cell to an siRNA molecule which is specific for a gene of interest in the cell. The methods also include introducing into the cell DNA sequences encoding a sense strand and an antisense strand of an siRNA which is specific for the gene of interest. The siRNA directs methylation of the gene of interest.

Abstract: The present invention relates to transcriptional gene silencing (TGS) in mammalian, including human, cells that is mediated by small interfering RNA (siRNA) molecules. The present invention also relates to a method for directing histone and/or DNA methylation in mammalian, including human, cells. It has been found that siRNAs can be used to direct methylation of DNA in mammalian, including human, cells.

Abstract: The invention provides methods for methylating a gene of interest in a cell. The methods include exposing a mammalian cell to an siRNA molecule which is specific for a gene of interest in the cell. The methods also include introducing into the cell DNA sequences encoding a sense strand and an antisense strand of an siRNA which is specific for the gene of interest. The siRNA directs methylation of the gene of interest.

Abstract: A method of improving surface morphology of a semiconductor substrate when using an SOI technique comprises providing a silicon ingot positioned on a support member, orientating the silicon ingot in relation to the support member, and a cutting device, and cutting the silicon ingot along about a (100) crystal plane of the silicon ingot, preferably using a wire saw. This then provides a silicon substrate having an initial surface defining a miscut angle which is less than about 0.15 degrees from the (100) crystal plane. The method then comprises processing the silicon substrate using SIMOX processing, which includes implanting oxygen atoms in the silicon substrate to form a buried oxide layer and annealing the silicon substrate to provide a final substrate surface. Finally, the method includes accepting the final substrate surface for further processing when the final substrate surface measures between 2-20 Å RMS using an atomic force microscopy technique.

Abstract: A screwed pipe joint with a bell for connecting two pipes of a drill pipe string.

Abstract: A drill pipe coupling includes a coupling member (2) having an unthreaded central section (13) with a cylindrical bore (26) therein and an outer shoulder (11,12) on each side thereof. Adjoining the shoulders are respective conical external threads for threading into an internal correspondingly threaded upset head section of a drill pipe formed as a bell elements and including end surfaces (9,10). The drill pipe has an undeformed cylindrical bore (14) connected to the threaded upset head. The drill pipe end surfaces (9,10) sealingly abut the outer shoulders (11,12) of the central section (13) when the pipes are joined together. The drill pipe has an intermediate section (16) adjoining the cylindrical bore (14) and has an inside diameter which decreases in the direction toward the threaded section (5, 6).

Abstract: A positive resist containing a weak base and polyvinyl phenol as a film forming component is deposited on a substrate, subsequently exposed imagewise, cured, blanket exposed and developed in a KOH solution at temperatures of less than 10.degree. C. The resist pattern thus obtained is exposed to light having a wavelength ranging from 300 to 320 nm and finally heat-treated at temperatures ranging from 150.degree. to 280.degree. C. The finished lift-off mask is dimensionally stable at temperatures of .ltoreq.280.degree. C. and does not emit liquid or volatile components when heated.During application of the lift-off mask, a material is blanket vapor deposited at a substrate temperature ranging from about 160.degree. to 250.degree. C. on the resist pattern having openings with overhanging walls. Subsequently, the resist pattern is dissolved in a sodium metasilicate solution, causing the material vapor deposited thereon to be lifted off, with the material deposited on the substrate directly remaining.

Abstract: The present invention relates to a cold pilger rolling mill and a method and means for manufacturing tubes with externally and/or internally thickened portions by reducing the tubes over a mandrel by means of grooved rolls which are mounted in a reciprocating roll stand. The invention provides several different varying diameter grooves on the rolls, which grooves can be brought into play one after the other by rotation of the rolls through an adjustment of the toothed racks on which the rolls are mounted. Consequently, at least one groove is provided for the rolling out of the required cross-section of most of the tube and a second groove is provided for the rolling of a thickened portion of the tube. It is essential that a smoothing zone is associated with each groove, and a zone for rotating and advancing the tube is associated with at least one of the grooves.

Abstract: It was discovered that a rolling mandrel holding a hollow which is rolled in a multistrand mill should be advanced in a particular manner that relates to the stretching the hollow undergoes in the first and second stand, as well as to the speed of the unrolled hollow. A velocity profile has been developed accordingly.