Abstract: A memory device includes a memory die bonded to a logic die. A logic die that is bonded to a memory die via a wafer-on-wafer bonding process can receive signals indicative of input data from a global data bus of the memory die and through a bond of the logic die and memory die. The logic die can also receive signals indicative of kernel data from local input/output (LIO) lines of the memory die and through the bond. The logic die can perform a plurality of operations at a plurality of vector-vector (VV) units utilizing the signals indicative of input data and the signals indicative of kernel data.

Abstract: A memory device includes a memory die bonded to a logic die via a wafer-on-wafer bond. A controller of the memory device that is coupled to the memory die can activate a row of the memory die. Responsive to activating the row, a sense amplifier stripe of the memory die can latch a first plurality of signals. A transceiver can route a second plurality of signals from the sense amplifier stripe to the logic die.

Abstract: A wafer-on-wafer formed memory and logic device can enable high bandwidth transmission of data directly between a memory die and a logic die. A logic die that is bonded to a memory die via a wafer-on-wafer bonding process can receive signals indicative of a genetic sequence from the memory die and through a wafer-on-wafer bond. The logic die can also perform a genome annotation lotic operation to attach biological information to the genetic sequence. An annotated genetic sequence can be provided as an output.

Abstract: Methods, systems, and devices related to a memory die and a logic die having a wafer-on-wafer bond therebetween. A memory die can include a memory array and a plurality of input/output (IO) lines coupled thereto. A logic die can include to a deep learning accelerator (DLA). The memory die can be coupled to the logic die by a wafer-on-wafer bond. The wafer-on-wafer bond can couple the plurality of IO lines to the DLA.

Abstract: A memory device includes a memory die bonded to a logic die. A logic die that is bonded to a memory die via a wafer-on-wafer bonding process can receive signals indicative of input data from a global data bus of the memory die and through a bond of the logic die and memory die. The logic die can also receive signals indicative of kernel data from local input/output (LIO) lines of the memory die and through the bond. The logic die can perform a plurality of operations at a plurality of vector-vector (VV) units utilizing the signals indicative of input data and the signals indicative of kernel data. The inputs and the outputs to the VV units can be configured based on a mode of the logic die.

Abstract: Methods, systems, and devices related to forming a wafer-on-wafer bond between a memory die and a logic die. A plurality of first metal pads can be formed on a first wafer and a plurality of second metal pads can be formed on a second wafer. A subset of the first metal pads can be bonded to a subset of the second metal pads via a wafer-on-wafer bonding process. Each of a plurality of memory devices on the first wafer can be aligned with and coupled to at least a respective one of a plurality of logic devices on the second wafer. The bonded first and second wafers can be singulated into individual wafer-on-wafer bonded memory and logic dies.

Abstract: A wafer-on-wafer bonded memory and logic device can enable high bandwidth transmission of data directly between a memory die and a logic die. A memory device formed on a memory die can include many global input/output lines and many arrays of memory cells. Each array of memory cells can include respective local input/output (LIO) lines coupled to a global input/output line. A logic device can be formed on a logic die. A bond, formed between the memory die and the logic die via a wafer-on-wafer bonding process, can couple the many global input/output lines to the logic device.

Abstract: Systems, apparatuses, and methods related to extended memory operations are described. Extended memory operations can include operations specified by a single address and operand and may be performed by a computing device that includes a processing unit and a memory resource. The computing device can perform extended memory operations on data streamed through the computing tile without receipt of intervening commands. In an example, a computing device is configured to receive a command to perform an operation that comprises performing an operation on a data with the processing unit of the computing device and determine that an operand corresponding to the operation is stored in the memory resource. The computing device can further perform the operation using the operand stored in the memory resource.

Abstract: Methods, systems, and devices for operational code storage for an on-die microprocessor are described. A microprocessor may be formed on-die with a memory array. Operating code for the microprocessor may be stored in the memory array, possibly along with other data (e.g., tracking or statistical data) used or generated by the on-die microprocessor. A wear leveling algorithm may result in some number of rows within the memory array not being used to store user data at any given time, and these rows may be used to store the operating code and possibly other data for the on-die microprocessor. The on-die microprocessor may boot and run based on the operating code stored in memory array.

Abstract: Apparatuses and methods can be related to implementing edge compute components in a memory array. Compute components can be implemented under a memory array. Implementing compute components under a memory array can limit control access to the compute components due to die space utilized by the compute components. A portion of the compute components (e.g., compute components on the edge) may have control access that is not available to the remainder of the compute components.

Abstract: Systems, apparatuses, and methods related to comparison of biometric identifiers in memory are described. An example apparatus includes an array of memory cells, a plurality of logic blocks in complementary metal-oxide-semiconductor (CMOS) under the array, and a controller coupled to the array of memory cells. The controller is configured to control a first portion of the plurality of logic blocks to receive a first subset of a set of biometric identifiers from the array and to perform a first comparison operation thereon and control a second portion of the logic blocks to receive a second subset of the set of biometric identifiers from the array and to perform a second comparison operation thereon. The first and second subsets of the biometric identifiers are different biometric identifiers and the first and second comparison operations are performed to determine a match of the first and second subsets respectively to a stored template.

Abstract: Apparatuses, systems, and methods related to memory pooling between selected memory resources are described. A system using a memory pool formed as such may enable performance of functions, including automated functions critical for prevention of damage to a product, personnel safety, and/or reliable operation, based on increased access to data that may improve performance of a mission profile. For instance, one apparatus described herein includes a memory resource, a processing resource coupled to the memory resource, and a transceiver resource coupled to the processing resource. The memory resource, the processing resource, and the transceiver resource are configured to enable formation of a memory pool between the memory resource and another memory resource at another apparatus responsive to a request to access the other memory resource transmitted from the processing resource via the transceiver.

Abstract: Systems, apparatuses and method related to remotely executable instructions are described. A device may be wirelessly coupled to (e.g., physically separated) another device, which may be in a physically separate device. The another device may remotely execute instructions associated with performing various operations, which would have been entirely executed at the device absent the another device. The outputs obtained as a result of the execution may be transmitted, via the transceiver, back to the device via a wireless communication link (e.g., using resources of an ultra high frequency (UHF), super high frequency (SHF), extremely high frequency (EHF), and/or tremendously high frequency (THF) bands). The another device at which the instructions are remotely executable may include memory resources, processing resources, and transceiver resources; they may be configured to use one or several communication protocols over licensed or shared frequency spectrum bands, directly (e.g.

Abstract: Apparatuses and methods can be related to supplementing AI processing in memory. An accelerator and/or a host can perform AI processing. Some of the operations comprising the AI processing can be performed by a memory device instead of by an accelerator and/or a host. The memory device can perform AI processing in conjunction with the host and/or accelerator.

Abstract: Apparatuses and methods can be related to configuring interface protocols for memory. An interface protocol can define the commands received by a memory device utilizing pins of an interface of a memory device. An interface protocol used by a memory device can be implemented utilizing a decoder of signals provided through the pins of the memory device. The decoder utilized by a memory device can be selected by setting a mode register of the memory device.

Abstract: An example apparatus comprises an array of memory cells coupled to sensing circuitry including a first sense amplifier, a second sense amplifier, and a logical operation component. The sensing circuitry may be controlled to sense, via first sense amplifier, a data value stored in a first memory cell of the array, sense, via a second sense amplifier, a data value stored in a second memory cell of the array, and operate the logical operation component to output a logical operation result based on the data value stored in the first sense amplifier and the data value stored in the second sense amplifier.

Abstract: The present disclosure includes apparatuses and methods related to logical operations using memory cells. An example apparatus comprises a first memory cell controlled to invert a data value stored therein and a second memory cell controlled to invert a data value stored therein. The apparatus may further include a controller coupled to the first memory cell and the second memory cell. The controller may be configured to cause performance of a logical operation between the data value stored in the first memory cell and the data value stored in the second memory cell.

Abstract: Methods and devices related to transferring data between DRAM and SRAM. One method includes activating a first portion of a dynamic random access memory (DRAM), reading data from the first portion of the DRAM, latching the data from the first portion of the DRAM in one or more sense amplifiers, and writing the data from the one or more sense amplifiers to a first portion of a static random access memory (SRAM).

Abstract: Apparatuses and methods can be related to generating an asynchronous process topology in a memory device. The topology can be generated based on the results of a number of processes. The processes can be asynchronous given that the processing resources that implement the processes do not use a clock signal to generate the topology.

Abstract: An example apparatus includes a memory device having first sensing circuitry positioned adjacent an edge of an edge array section and selectably coupled to a row memory cells, the first sensing circuitry including a first sense amplifier selectably coupled via a first sense line to a first memory cell in the row and via a second sense line to the first memory cell. The example apparatus includes second sensing circuitry positioned at an opposite edge of the edge array section and selectably coupled to the row via a third sense line, the second sensing circuitry including a second sense amplifier selectably coupled via the third sense line to a second memory cell in the row. The example apparatus further includes a component positioned outside the edge array section and proximate the first sensing circuitry, the component configured to perform an operation based on data sensed by the first sensing circuitry.