Abstract: A material for forming an underlayer film for lithography, in which a compound represented by the following formula (0) is used.

Abstract: The composition for forming an underlayer film for lithography according to the present invention contains a compound represented by a specific formula (1) and 20 to 99% by mass of a solvent component (S), in which 27 to 100% by mass of the compound represented by the formula (1) is included in a component (A) other than the solvent component (S).

Abstract: The cyanate ester compound of the present invention is obtained by cyanating a modified naphthalene formaldehyde resin.

Abstract: A material for forming an underlayer film for lithography, in which a compound represented by the following formula (0) is used.

Abstract: A material for forming an underlayer film for lithography, including a cyanic acid ester compound obtained by cyanation of a modified xylene formaldehyde resin, a composition including the material, and a pattern forming method using the composition.

Abstract: The present invention provides a material for forming an underlayer film for lithography, including a cyanic acid ester compound obtained by cyanation of a modified naphthalene formaldehyde resin.

Abstract: The composition for forming an underlayer film for lithography according to the present invention contains a compound represented by a specific formula (1) and 20 to 99% by mass of a solvent component (S), in which 27 to 100% by mass of the compound represented by the formula (1) is included in a component (A) other than the solvent component (S).

Abstract: There is provided an aromatic hydrocarbon formaldehyde resin obtained by reacting an aromatic hydrocarbon compound (A) represented by the following formula (1) with formaldehyde (B) in the presence of an acidic catalyst. wherein R represents an organic group having 1 to 10 carbon atoms; l represents an integer of 0 to 2, and m and n represent integers satisfying 1?m+n?10, m?0 and n?1.

Abstract: There is provided an aromatic hydrocarbon formaldehyde resin obtained by reacting an aromatic hydrocarbon compound (A) represented by the following formula (1) with formaldehyde (B) in the presence of an acidic catalyst. wherein R represents an organic group having 1 to 10 carbon atoms; m and n represent integers satisfying 1?m+n?10, m?0 and n?1.

Abstract: There is provided an aromatic hydrocarbon formaldehyde resin obtained by reacting an aromatic hydrocarbon compound (A) represented by the following formula (1) with formaldehyde (B) in the presence of an acidic catalyst. wherein R represents an organic group having 1 to 10 carbon atoms; m and n represent integers satisfying 1?m+n?10, m?0 and n?1.

Abstract: There is provided an aromatic hydrocarbon formaldehyde resin obtained by reacting an aromatic hydrocarbon compound (A) represented by the following formula (1) with formaldehyde (B) in the presence of an acidic catalyst. wherein R represents an organic group having 1 to 10 carbon atoms; l represents an integer of 0 to 2, and m and n represent integers satisfying 1?m+n?10, m?0 and n?1.

Abstract: The cyanate ester compound of the present invention is obtained by cyanating a modified naphthalene formaldehyde resin.

Abstract: Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1).

Abstract: Provided are a naphthalene formaldehyde resin obtained by reacting a compound (A) represented by formula (1) and formaldehyde (B) in a molar ratio, (A):(B), of 1:1 to 1:20 in the presence of an acidic catalyst, and a deacetalized naphthalene formaldehyde resin and a modified naphthalene formaldehyde resin derived therefrom.

Abstract: There is provided a novel phenolic resin which can be used as a coating agent or a resist resin for a semiconductor, which has a high carbon concentration and a low oxygen concentration in the resin, which has a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process. There are also provided a material useful for forming a novel photoresist underlayer film which has a relatively high solvent solubility, which can be applied to a wet process, and which is excellent in etching resistance as an underlayer film for a multilayer resist, an underlayer film formed using the same, and a pattern forming method using the same. A resin of the present invention is obtained by reacting a compound having a specified structure and an aldehyde having a specified structure in the presence of an acidic catalyst. In addition, a material for forming an underlayer film for lithography of the present invention includes at least the resin and an organic solvent.

Abstract: Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1).

Abstract: Provided are a novel resin and a precursor thereof that are excellent in thermal decomposability and solubility in a solvent. The resin is obtained by subjecting, to an acidic treatment, a monoalkylnaphthalene formaldehyde resin that is obtained by reacting a compound represented by the following formula (1), wherein R1 represents an alkyl group having 1 to 4 carbon atoms, and formaldehyde in the presence of a catalyst.

Abstract: Provided are a naphthalene formaldehyde resin obtained by reacting a compound (A) represented by formula (1) and formaldehyde (B) in a molar ratio, (A):(B), of 1:1 to 1:20 in the presence of an acidic catalyst, and a deacetalized naphthalene formaldehyde resin and a modified naphthalene formaldehyde resin derived therefrom.

Abstract: A resin having a fluorene structure, a relatively high carbon concentration in the resin, a relatively high heat resistance and a relatively high solvent solubility has a structure represented by wherein each of R3 and R4 independently denotes a benzene ring or a naphthalene ring, a carbon atom at the bridgehead of a fluorene backbone or (di)benzofluorene backbone is bonded with a carbon atom of each of other aromatic rings, and a carbon atom of each of aromatic rings of a fluorene backbone or (di)benzofluorene backbone is bonded with a carbon atom at the bridgehead of other fluorene backbone or (di)benzofluorene backbone. The resin can be applied to a wet process. Methods for producing the resin, for forming an underlayer film useful for forming a novel resist, and for pattern forming using the material, and an underlayer film excellent in heat resistance and etching resistance for multilayer resist are described.

Abstract: There is provided a novel phenolic resin which can be used as a coating agent or a resist resin for a semiconductor, which has a high carbon concentration and a low oxygen concentration in the resin, which has a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process. There are also provided a material useful for forming a novel photoresist underlayer film which has a relatively high solvent solubility, which can be applied to a wet process, and which is excellent in etching resistance as an underlayer film for a multilayer resist, an underlayer film formed using the same, and a pattern forming method using the same. A resin of the present invention is obtained by reacting a compound having a specified structure and an aldehyde having a specified structure in the presence of an acidic catalyst. In addition, a material for forming an underlayer film for lithography of the present invention includes at least the resin and an organic solvent.