Patents by Inventor Go Higashihara

Go Higashihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8741553
    Abstract: Provided is an aromatic hydrocarbon resin with a high carbon concentration and a low oxygen concentration that can be used as a coating agent or a resist resin for semiconductors, as well as a composition for forming an underlayer film for photolithography with excellent etching resistance as an underlayer film for a multilayer resist process, an underlayer film formed from the composition, and a method for forming a pattern using the underlayer film. An aromatic hydrocarbon, an aromatic aldehyde, and a phenol derivative are reacted in the presence of an acidic catalyst to yield an aromatic hydrocarbon resin with a high carbon concentration of 90 to 99.9 mass % and a solubility in propylene glycol monomethyl ether acetate of 10 mass % or more.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: June 3, 2014
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Go Higashihara, Naoya Uchiyama, Masatoshi Echigo
  • Patent number: 8592134
    Abstract: A composition for forming an underlayer film for lithography for imparting excellent optical characteristics and etching resistance to an underlayer film for lithography, an underlayer film being formed of the composition and having a high refractive index (n) and a low extinction coefficient (k), being transparent, having high etching resistance, containing a significantly small amount of a sublimable component, and a method for forming a pattern using the underlayer film are provided. The composition for forming an underlayer film contains a naphthalene formaldehyde polymer having a specific unit obtained by reacting naphthalene and/or alkylnaphthalene with formaldehyde, and an organic solvent.
    Type: Grant
    Filed: December 1, 2008
    Date of Patent: November 26, 2013
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Dai Oguro, Go Higashihara, Seiji Kita, Mitsuharu Kitamura, Masashi Ogiwara
  • Publication number: 20130280655
    Abstract: Provided is an aromatic hydrocarbon resin with a high carbon concentration and a low oxygen concentration that can be used as a coating agent or a resist resin for semiconductors, as well as a composition for forming an underlayer film for photolithography with excellent etching resistance as an underlayer film for a multilayer resist process, an underlayer film formed from the composition, and a method for forming a pattern using the underlayer film. An aromatic hydrocarbon, an aromatic aldehyde, and a phenol derivative are reacted in the presence of an acidic catalyst to yield an aromatic hydrocarbon resin with a high carbon concentration of 90 to 99.9 mass % and a solubility in propylene glycol monomethyl ether acetate of 10 mass % or more.
    Type: Application
    Filed: December 14, 2011
    Publication date: October 24, 2013
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Go Higashihara, Naoya Uchiyama, Masatoshi Echigo
  • Publication number: 20100316950
    Abstract: A composition for forming an underlayer film for lithography for imparting excellent optical characteristics and etching resistance to an underlayer film for lithography, an underlayer film being formed of the composition and having a high refractive index (n) and a low extinction coefficient (k), being transparent, having high etching resistance, containing a significantly small amount of a sublimable component, and a method for forming a pattern using the underlayer film are provided. The composition for forming an underlayer film contains a naphthalene formaldehyde polymer having a specific unit obtained by reacting naphthalene and/or alkylnaphthalene with formaldehyde, and an organic solvent.
    Type: Application
    Filed: December 1, 2008
    Publication date: December 16, 2010
    Applicant: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Dai Oguro, Go Higashihara, Seiji Kita, Mitsuharu Kitamura, Masashi Ogiwara