Patents by Inventor Gregor Keller
Gregor Keller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955334Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping profile that changes from a p-doping to an n-doping on a surface of a substrate or a preceding layer from the vapor phase from an epitaxial gas flow, at least one first precursor for an element of main group III, and at least one second precursor for an element of main group V. When a first growth height is reached, a first initial doping level is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow, and subsequently, by stepwise or continuously changing the ratio of the first mass flow to the second mass flow and by stepwise or continuously increasing a mass flow of a third precursor for an n-type dopant in the epitaxial gas flow.Type: GrantFiled: December 21, 2020Date of Patent: April 9, 2024Assignee: AZUR SPACE Solar Power GmbHInventors: Gregor Keller, Clemens Waechter, Thorsten Wierzkowski
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Patent number: 11859310Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow, the first initial doping level is then reduced to a second initial doping level of the first or low second conductivity type.Type: GrantFiled: December 21, 2020Date of Patent: January 2, 2024Assignee: Azur Space Solar Power GmbHInventors: Clemens Waechter, Gregor Keller, Daniel Fuhrmann
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Patent number: 11728453Abstract: A stacked monolithic multijunction solar cell, which includes a first subcell having a p-n junction with an emitter layer and a base layer, the thickness of the emitter layer being less than the thickness of the base layer at least by a factor of ten, and the first subcell comprising a substrate having a semiconductor material from the groups III and V or a substrate from the group IV, and which further includes a second subcell arranged on the first subcell and a third subcell arranged on the second subcell, the two subcells each including an emitter layer and a base layer, and a tunnel diode and a back side field layer each being formed between the subcells, the thickness of the emitter layer being greater than the thickness of the base layer in each case between the second subcell and in the third subcell.Type: GrantFiled: July 12, 2021Date of Patent: August 15, 2023Assignee: AZUR SPACE Solar Power GmbHInventors: Daniel Fuhrmann, Rosalinda Van Leest, Gregor Keller, Matthias Meusel
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Patent number: 11715766Abstract: A stacked high barrier III-V power semiconductor diode having an at least regionally formed first metallic terminal contact layer and a heavily doped semiconductor contact region of a first conductivity type with a first lattice constant, a drift layer of a second conductivity type, a heavily doped metamorphic buffer layer sequence of the second conductivity type is formed. The metamorphic buffer layer sequence has an upper side with the first lattice constant and a lower side with a second lattice constant. The first lattice constant is greater than the second lattice constant. The upper side of the metamorphic buffer layer sequence is arranged in the direction of the drift layer. A second metallic terminal contact layer is arranged below the lower side of the metamorphic buffer layer sequence. The second metallic terminal contact layer is integrally bonded with a semiconductor contact layer.Type: GrantFiled: December 22, 2021Date of Patent: August 1, 2023Assignee: AZUR SPACE Solar Power GmbHInventors: Daniel Fuhrmann, Gregor Keller, Clemens Waechter
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Patent number: 11699722Abstract: A stacked, high-blocking III-V semiconductor power diode having a first metallic terminal contact layer, formed at least in regions, and a highly doped semiconductor contact region of a first conductivity type and a first lattice constant. A drift layer of a second conductivity type and having a first lattice constant is furthermore provided. A semiconductor contact layer of a second conductivity, which includes an upper side and an underside, and a second metallic terminal contact layer are formed, and the second metallic terminal contact layer being integrally connected to the underside of the semiconductor contact layer, and the semiconductor contact layer having a second lattice constant at least on the underside, and the second lattice constant being the lattice constant of InP, and the drift layer and the highly doped semiconductor contact region each comprising an InGaAs compound or being made up of InGaAs.Type: GrantFiled: January 19, 2022Date of Patent: July 11, 2023Assignees: AZUR SPACE, 3-5 Power Electronics GmbHInventors: Daniel Fuhrmann, Gregor Keller, Clemens Waechter, Volker Dudek
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Patent number: 11598022Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor, then the first initial doping level is reduced to a second initial doping level of the first or low second conductivity type.Type: GrantFiled: December 21, 2020Date of Patent: March 7, 2023Assignee: AZUR SPACE Solar Power GmbHInventors: Clemens Waechter, Gregor Keller, Daniel Fuhrmann
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Patent number: 11557665Abstract: A vertical high-blocking III-V bipolar transistor, which includes an emitter, a base and a collector. The emitter has a highly doped emitter semiconductor contact region of a first conductivity type and a first lattice constant. The base has a low-doped base semiconductor region of a second conductivity type and the first lattice constant. The collector has a layered low-doped collector semiconductor region of the first conductivity type with a layer thickness greater than 10 ?m and the first lattice constant. The collector has a layered highly doped collector semiconductor contact region of the first conductivity type. A first metallic connecting contact layer is formed in regions being integrally connected to the emitter. A second metallic connecting contact layer is formed in regions being integrally connected to the base. A third metallic connecting contact region is formed at least in regions being arranged beneath the collector.Type: GrantFiled: July 6, 2021Date of Patent: January 17, 2023Assignee: AZUR SPACE Solar Power GmbHInventors: Gregor Keller, Clemens Waechter, Daniel Fuhrmann
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Publication number: 20220140088Abstract: A stacked, high-blocking III-V semiconductor power diode having a first metallic terminal contact layer, formed at least in regions, and a highly doped semiconductor contact region of a first conductivity type and a first lattice constant. A drift layer of a second conductivity type and having a first lattice constant is furthermore provided. A semiconductor contact layer of a second conductivity, which includes an upper side and an underside, and a second metallic terminal contact layer are formed, and the second metallic terminal contact layer being integrally connected to the underside of the semiconductor contact layer, and the semiconductor contact layer having a second lattice constant at least on the underside, and the second lattice constant being the lattice constant of InP, and the drift layer and the highly doped semiconductor contact region each comprising an InGaAs compound or being made up of InGaAs.Type: ApplicationFiled: January 19, 2022Publication date: May 5, 2022Applicants: AZUR SPACE Solar Power GmbH, 3-5 Power Electronics GmbHInventors: Daniel FUHRMANN, Gregor KELLER, Clemens WAECHTER, Volker DUDEK
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Publication number: 20220115501Abstract: A stacked high barrier III-V power semiconductor diode having an at least regionally formed first metallic terminal contact layer and a heavily doped semiconductor contact region of a first conductivity type with a first lattice constant, a drift layer of a second conductivity type, a heavily doped metamorphic buffer layer sequence of the second conductivity type is formed. The metamorphic buffer layer sequence has an upper side with the first lattice constant and a lower side with a second lattice constant. The first lattice constant is greater than the second lattice constant. The upper side of the metamorphic buffer layer sequence is arranged in the direction of the drift layer. A second metallic terminal contact layer is arranged below the lower side of the metamorphic buffer layer sequence. The second metallic terminal contact layer is integrally bonded with a semiconductor contact layer.Type: ApplicationFiled: December 22, 2021Publication date: April 14, 2022Applicant: AZUR SPACE Solar Power GmbHInventors: Daniel FUHRMANN, Gregor KELLER, Clemens WAECHTER
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Patent number: 11280025Abstract: A vapor phase epitaxy method including: providing a III-V substrate of a first conductivity type, introducing the III-V substrate into a reaction chamber of a vapor phase epitaxy system at a loading temperature, heating the III-V substrate from the loading temperature to an epitaxy temperature while introducing an initial gas flow, depositing a III-V layer with a dopant concentration of a dopant of the first conductivity type on a surface of the III-V substrate from the vapor phase from an epitaxial gas flow, fed into the reaction chamber and comprising the carrier gas, the first precursor, and at least one second precursor for an element of main group III, wherein during the heating from the loading temperature to the epitaxy temperature, a third precursor for a dopant of the first conductivity type is added to the initial gas flow.Type: GrantFiled: December 21, 2020Date of Patent: March 22, 2022Assignee: AZUR SPACE Solar Power GmbHInventors: Clemens Waechter, Gregor Keller
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Patent number: 11257909Abstract: A stacked, high-blocking III-V semiconductor power diode having a first metallic terminal contact layer, formed at least in regions, and a highly doped semiconductor contact region of a first conductivity type and a first lattice constant. A drift layer of a second conductivity type and having a first lattice constant is furthermore provided. A semiconductor contact layer of a second conductivity, which includes an upper side and an underside, and a second metallic terminal contact layer are formed, and the second metallic terminal contact layer being integrally connected to the underside of the semiconductor contact layer, and the semiconductor contact layer having a second lattice constant at least on the underside, and the second lattice constant being the lattice constant of InP, and the drift layer and the highly doped semiconductor contact region each comprising an InGaAs compound or being made up of InGaAs.Type: GrantFiled: April 30, 2020Date of Patent: February 22, 2022Assignees: AZUR SPACE Solar Power GmbH, 3-5 Power Electronics GmbHInventors: Daniel Fuhrmann, Gregor Keller, Clemens Waechter, Volker Dudek
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Patent number: 11245012Abstract: A stacked high barrier III-V power semiconductor diode having an at least regionally formed first metallic terminal contact layer and a heavily doped semiconductor contact region of a first conductivity type with a first lattice constant, a drift layer of a second conductivity type, a heavily doped metamorphic buffer layer sequence of the second conductivity type is formed. The metamorphic buffer layer sequence has an upper side with the first lattice constant and a lower side with a second lattice constant. The first lattice constant is greater than the second lattice constant. The upper side of the metamorphic buffer layer sequence is arranged in the direction of the drift layer. A second metallic terminal contact layer is arranged below the lower side of the metamorphic buffer layer sequence. The second metallic terminal contact layer is integrally bonded with a semiconductor contact layer.Type: GrantFiled: April 30, 2020Date of Patent: February 8, 2022Assignee: AZUR SPACE Solar Power GmbHInventors: Daniel Fuhrmann, Gregor Keller, Clemens Waechter
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Publication number: 20220013676Abstract: A stacked monolithic multijunction solar cell, which includes a first subcell having a p-n junction with an emitter layer and a base layer, the thickness of the emitter layer being less than the thickness of the base layer at least by a factor of ten, and the first subcell comprising a substrate having a semiconductor material from the groups III and V or a substrate from the group IV, and which further includes a second subcell arranged on the first subcell and a third subcell arranged on the second subcell, the two subcells each including an emitter layer and a base layer, and a tunnel diode and a back side field layer each being formed between the subcells, the thickness of the emitter layer being greater than the thickness of the base layer in each case between the second subcell and in the third subcell.Type: ApplicationFiled: July 12, 2021Publication date: January 13, 2022Applicant: AZUR SPACE Solar Power GmbHInventors: Daniel FUHRMANN, Rosalinda VAN LEEST, Gregor KELLER, Matthias MEUSEL
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Publication number: 20220005942Abstract: A vertical high-blocking III-V bipolar transistor, which includes an emitter, a base and a collector. The emitter has a highly doped emitter semiconductor contact region of a first conductivity type and a first lattice constant. The base has a low-doped base semiconductor region of a second conductivity type and the first lattice constant. The collector has a layered low-doped collector semiconductor region of the first conductivity type with a layer thickness greater than 10 ?m and the first lattice constant. The collector has a layered highly doped collector semiconductor contact region of the first conductivity type. A first metallic connecting contact layer is formed in regions being integrally connected to the emitter. A second metallic connecting contact layer is formed in regions being integrally connected to the base. A third metallic connecting contact region is formed at least in regions being arranged beneath the collector.Type: ApplicationFiled: July 6, 2021Publication date: January 6, 2022Applicant: AZUR SPACE Solar Power GmbHInventors: Gregor KELLER, Clemens WAECHTER, Daniel FUHRMANN
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Publication number: 20210193464Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping profile that changes from a p-doping to an n-doping on a surface of a substrate or a preceding layer from the vapor phase from an epitaxial gas flow, at least one first precursor for an element of main group III, and at least one second precursor for an element of main group V. When a first growth height is reached, a first initial doping level is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow, and subsequently, by stepwise or continuously changing the ratio of the first mass flow to the second mass flow and by stepwise or continuously increasing a mass flow of a third precursor for an n-type dopant in the epitaxial gas flow.Type: ApplicationFiled: December 21, 2020Publication date: June 24, 2021Applicant: AZUR SPACE SOLAR POWER GMBHInventors: Gregor KELLER, Clemens WAECHTER, Thorsten Wierzkowski
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Publication number: 20210189595Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor, then the first initial doping level is reduced to a second initial doping level of the first or low second conductivity type.Type: ApplicationFiled: December 21, 2020Publication date: June 24, 2021Applicant: AZUR SPACE SOLAR POWER GMBHInventors: Clemens WAECHTER, Gregor KELLER, Daniel FUHRMANN
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Publication number: 20210193463Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping profile that changes from n-doping to p-doping on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase of an epitaxial gas flow, comprising at least one carrier gas, a first precursor for a first element from main group III and at least one second precursor for a first element from main group V, and fed into the reaction chamber, wherein, when a first growth level is reached, an initial n-doping level is set by means of a ratio, leading to a p-doping, of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow and with the addition of a third mass flow of a third precursor for an n-type dopant to the epitaxial gas flow, subsequently.Type: ApplicationFiled: December 21, 2020Publication date: June 24, 2021Applicant: AZUR SPACE SOLAR POWER GMBHInventors: Clemens WAECHTER, Gregor KELLER, Thorsten WIERZKOWSKI, Daniel FUHRMANN
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Publication number: 20210189592Abstract: A vapor phase epitaxy method including: providing a III-V substrate of a first conductivity type, introducing the III-V substrate into a reaction chamber of a vapor phase epitaxy system at a loading temperature, heating the III-V substrate from the loading temperature to an epitaxy temperature while introducing an initial gas flow, depositing a III-V layer with a dopant concentration of a dopant of the first conductivity type on a surface of the III-V substrate from the vapor phase from an epitaxial gas flow, fed into the reaction chamber and comprising the carrier gas, the first precursor, and at least one second precursor for an element of main group III, wherein during the heating from the loading temperature to the epitaxy temperature, a third precursor for a dopant of the first conductivity type is added to the initial gas flow.Type: ApplicationFiled: December 21, 2020Publication date: June 24, 2021Applicant: AZUR SPACE SOLAR POWER GMBHInventors: Clemens WAECHTER, Gregor KELLER
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Publication number: 20210193465Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow, the first initial doping level is then reduced to a second initial doping level of the first or low second conductivity type.Type: ApplicationFiled: December 21, 2020Publication date: June 24, 2021Applicant: AZUR SPACE SOLAR POWER GMBHInventors: Clemens WAECHTER, Gregor KELLER, Daniel FUHRMANN
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Publication number: 20200395495Abstract: A stacked multi-junction solar cell comprising a stack composed of a bottom subcell, at least one middle subcell, and a top subcell, wherein each subcell has an emitter and a base at least the top subcell is made of a III-V semiconductor material or includes a III-V semiconductor material, and the emitter of the top subcell includes a superlattice.Type: ApplicationFiled: September 1, 2020Publication date: December 17, 2020Applicant: AZUR SPACE SOLAR POWER GMBHInventors: Daniel FUHRMANN, Gregor KELLER, Rosalinda VAN LEEST