Abstract: A method for processing a semiconductor wafer in accordance with various embodiments may include: providing a semiconductor wafer including at least one chip and at least one kerf region adjacent to the at least one chip, the kerf region including at least one auxiliary structure; applying a mask layer to the semiconductor wafer; removing the at least one auxiliary structure in the at least one kerf region; removing the applied mask layer; and separating the semiconductor wafer along the at least one kerf region.

Abstract: Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.

Abstract: A method for processing a semiconductor wafer in accordance with various embodiments may include: providing a semiconductor wafer including at least one chip and at least one kerf region adjacent to the at least one chip, the kerf region including at least one auxiliary structure; applying a mask layer to the semiconductor wafer; removing the at least one auxiliary structure in the at least one kerf region; removing the applied mask layer; and separating the semiconductor wafer along the at least one kerf region.

Abstract: Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated substrate is completely separated into a plurality of parts.

Abstract: A method for processing a semiconductor workpiece is provided, which may include: providing a semiconductor workpiece including a metallization layer stack disposed at a side of the semiconductor workpiece, the metallization layer stack including at least a first layer and a second layer disposed over the first layer, wherein the first layer contains a first material and the second layer contains a second material that is different from the first material; patterning the metallization layer stack, wherein patterning the metallization layer stack includes wet etching the first layer and the second layer by means of an etching solution that has at least substantially the same etching rate for the first material and the second material.

Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

Abstract: A layer arrangement in accordance with various embodiments may include: a wafer; a passivation disposed over the wafer; a protection layer disposed over at least a surface of the passivation facing away from the wafer; and a mask layer disposed over at least a surface of the protection layer facing away from the wafer, wherein the protection layer includes a material that is selectively etchable to a material of the passivation, and wherein the mask layer includes a material that is selectively etchable to the material of the protection layer.

Abstract: The various aspects comprise methods and devices for processing a wafer. An aspect of this disclosure includes a wafer. The wafer comprises a plurality of die regions; a plurality of kerf regions between the plurality of die regions; and a metallization area on the plurality of die regions.

Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

Abstract: A method for processing a wafer in accordance with various embodiments may include: forming a passivation over the wafer; forming a protection layer over at least a surface of the passivation facing away from the wafer, wherein the protection layer includes a material that is selectively etchable to a material of the passivation; forming a mask layer over at least a surface of the protection layer facing away from the wafer, wherein the mask layer includes a material that is selectively etchable to the material of the protection layer; etching the wafer using the mask layer as a mask; selectively etching the material of the mask layer to remove the mask layer from the protection layer, after etching the wafer; and selectively etching the material of the protection layer to remove the protection layer from the passivation, after selectively etching the material of the mask layer.

Abstract: A method for processing a wafer in accordance with various embodiments may include: forming a passivation over the wafer; forming a protection layer over at least a surface of the passivation facing away from the wafer, wherein the protection layer includes a material that is selectively etchable to a material of the passivation; forming a mask layer over at least a surface of the protection layer facing away from the wafer, wherein the mask layer includes a material that is selectively etchable to the material of the protection layer; etching the wafer using the mask layer as a mask; selectively etching the material of the mask layer to remove the mask layer from the protection layer, after etching the wafer; and selectively etching the material of the protection layer to remove the protection layer from the passivation, after selectively etching the material of the mask layer.

Abstract: The various aspects comprise methods and devices for processing a wafer. An aspect of this disclosure includes a wafer. The wafer comprises a plurality of die regions; a plurality of kerf regions between the plurality of die regions; and a metallization area on the plurality of die regions.

Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.