Patents by Inventor Haichun Yang
Haichun Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230355549Abstract: A method of treating proteinuric kidney injury, comprising administering an effective isoLG scavenging amount of at least one compound of the present invention.Type: ApplicationFiled: April 13, 2023Publication date: November 9, 2023Inventors: Valentina Kon, Naji Abumrad, Sean Davies, Haichun Yang
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Patent number: 11791181Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.Type: GrantFiled: September 18, 2020Date of Patent: October 17, 2023Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD, MATTSON TECHNOLOGY, INC.Inventors: Ting Xie, Hua Chung, Haochen Li, Xinliang Lu, Shawming Ma, Haichun Yang, Michael X. Yang
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Patent number: 11791166Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.Type: GrantFiled: November 22, 2021Date of Patent: October 17, 2023Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD, MATTSON TECHNOLOGY, INC.Inventors: Qi Zhang, Haichun Yang, Hua Chung, Ting Xie, Michael X. Yang
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Patent number: 11315801Abstract: Methods for processing a workpiece are provided. The workpiece can include a ruthenium layer and a copper layer. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The method can include performing an ozone etch process on the workpiece to at least a portion of the ruthenium layer. The method can also include performing a hydrogen radical treatment process on a workpiece to remove at least a portion of an oxide layer on the copper layer.Type: GrantFiled: May 21, 2021Date of Patent: April 26, 2022Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD, MATTSON TECHNOLOGY, INC.Inventors: Qi Zhang, Haichun Yang, Hua Chung, Michael X. Yang
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Publication number: 20220084839Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.Type: ApplicationFiled: November 22, 2021Publication date: March 17, 2022Inventors: Qi Zhang, Haichun Yang, Hua Chung, Ting Xie, Michael X. Yang
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Patent number: 11251050Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.Type: GrantFiled: June 18, 2020Date of Patent: February 15, 2022Assignees: Mattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.Inventors: Qi Zhang, Xinliang Lu, Hua Chung, Haichun Yang
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Publication number: 20210366727Abstract: Methods for processing a workpiece are provided. The workpiece can include a ruthenium layer and a copper layer. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The method can include performing an ozone etch process on the workpiece to at least a portion of the ruthenium layer. The method can also include performing a hydrogen radical treatment process on a workpiece to remove at least a portion of an oxide layer on the copper layer.Type: ApplicationFiled: May 21, 2021Publication date: November 25, 2021Inventors: Qi Zhang, Haichun Yang, Hua Chung, Michael X. Yang
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Patent number: 11183397Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.Type: GrantFiled: October 15, 2020Date of Patent: November 23, 2021Assignees: Beijing E-Town Semiconductor Technology, Co., LTD, Mattson Technology, Inc.Inventors: Qi Zhang, Haichun Yang, Hua Chung, Ting Xie, Michael X. Yang
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Publication number: 20210343506Abstract: Apparatus and methods for processing a workpiece using a plasma are provided. In one example implementation, an apparatus can include a processing chamber. The apparatus can include a plasma chamber comprising a dielectric tube defining a sidewall. The apparatus can include an inductively coupled plasma source. The inductively coupled plasma source can include an RF generator configured to energize an induction coil disposed about the dielectric tube. The apparatus can include a separation grid separating the processing chamber from the plasma chamber. The apparatus can include a controller configured to operate the inductively coupled plasma source in a pulsed mode. During the pulsed mode the RF generator is configured to apply a plurality of pulses of RF power to the induction coil. A frequency of pulses can be in a range of about 1 kHz to about 100 kHz.Type: ApplicationFiled: April 30, 2021Publication date: November 4, 2021Inventors: Ting Xie, Haochen Li, Shuang Meng, Qiqun Zhang, Dave Kohl, Shawming Ma, Haichun Yang, Hua Chung, Ryan M. Pakulski, Michael X. Yang
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Patent number: 11164727Abstract: Processes for removing photoresist layer(s) from a workpiece, such as a semiconductor are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer and a low-k dielectric material layer. The method can include performing a hydrogen radical etch process on the workpiece to remove at least a portion of the photoresist layer. The method can also include exposing the workpiece to an ozone process gas to remove at least a portion of the photoresist layer.Type: GrantFiled: July 14, 2020Date of Patent: November 2, 2021Assignees: Beijing E-Town Semiconductor Technology Co., Ltd., Mattson Technology, Inc.Inventors: Ting Xie, Hua Chung, Bin Dong, Xinliang Lu, Haichun Yang, Michael X. Yang
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Publication number: 20210118694Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.Type: ApplicationFiled: October 15, 2020Publication date: April 22, 2021Inventors: Qi Zhang, Haichun Yang, Hua Chung, Ting Xie, Michael X. Yang
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Publication number: 20210082724Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.Type: ApplicationFiled: September 18, 2020Publication date: March 18, 2021Inventors: Ting Xie, Hua Chung, Haochen Li, Xinliang Lu, Shawming Ma, Haichun Yang, Michael X. Yang
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Publication number: 20210066088Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.Type: ApplicationFiled: June 18, 2020Publication date: March 4, 2021Inventors: Qi Zhang, Xinliang Lu, Hua Chung, Haichun Yang
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Publication number: 20210020413Abstract: Processes for removing photoresist layer(s) from a workpiece, such as a semiconductor are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer and a low-k dielectric material layer. The method can include performing a hydrogen radical etch process on the workpiece to remove at least a portion of the photoresist layer. The method can also include exposing the workpiece to an ozone process gas to remove at least a portion of the photoresist layer.Type: ApplicationFiled: July 14, 2020Publication date: January 21, 2021Inventors: Ting Xie, Hua Chung, Bin Dong, Xinliang Lu, Haichun Yang, Michael X. Yang
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Patent number: 10692730Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.Type: GrantFiled: August 30, 2019Date of Patent: June 23, 2020Assignees: Mattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.Inventors: Qi Zhang, Xinliang Lu, Hua Chung, Haichun Yang
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Publication number: 20150255324Abstract: Embodiments disclosed herein generally relate to forming dielectric materials in high aspect ratio features. In one embodiment, a method for filling high aspect ratio trenches in one processing chamber is disclosed. The method includes placing a substrate inside a processing chamber, where the substrate has a surface having a plurality of high aspect ratio trenches and the surface is facing a gas/plasma distribution assembly. The method further includes performing a sequence of depositing a layer of dielectric material on the surface of the substrate and inside each of the plurality of trenches, where the layer of dielectric material is on a bottom and side walls of each trench, and removing a portion of the layer of dielectric material disposed on the surface of the substrate, where an opening of each trench is widened. The sequence repeats until the trenches are filled seamlessly with the dielectric material.Type: ApplicationFiled: February 25, 2015Publication date: September 10, 2015Inventors: Ning LI, Victor NGUYEN, Mihaela BALSEANU, Li-Qun XIA, Steven D. MARCUS, Haichun YANG, Keiichi TANAKA
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Patent number: 8318605Abstract: Formation of BPSG surface defects upon exposure to atmosphere is prevented by a plasma treatment method for converting boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer to gas phase compounds. The treatment plasma is generated from a treatment process gas containing one of (a) a fluorine compound or (b) a hydrogen compound.Type: GrantFiled: July 15, 2008Date of Patent: November 27, 2012Assignee: Applied Materials, Inc.Inventors: Chien-Teh Kao, Haichun Yang, Xinliang Lu, Mei Chang
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Patent number: 8252696Abstract: Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H2) and nitrogen trifluoride (NF3) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.Type: GrantFiled: October 7, 2008Date of Patent: August 28, 2012Assignee: Applied Materials, Inc.Inventors: Xinliang Lu, Haichun Yang, Zhenbin Ge, Nan Lu, David T. Or, Chien-Teh Kao, Mei Chang
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Patent number: 7989339Abstract: Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate.Type: GrantFiled: February 3, 2010Date of Patent: August 2, 2011Assignee: Applied Materials, Inc.Inventors: Kavita Shah, Haichun Yang, Schubert S. Chu
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Patent number: 7977246Abstract: A thermal anneal process for preventing formation of certain BPSG surface defects following an etch or silicon clean step using a fluorine and hydrogen chemistry. The thermal anneal process is carried out while protecting the wafer from moisture, by heating the wafer to a sufficiently high temperature for a sufficient duration of time to thermally diffuse boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer into the bulk of the layer. The thermal anneal process is completed by cooling the wafer to a sufficiently low temperature to fix the distribution of the boron and/or phosphorus materials in bulk of the doped glass layer.Type: GrantFiled: July 15, 2008Date of Patent: July 12, 2011Assignee: Applied Materials, Inc.Inventors: Haichun Yang, Chien-Teh Kao, Xinliang Lu, Mei Chang