Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: Provided herein is a thermoelectric system for generating electricity using ambient temperature oscillations (e.g., between day and night time). The thermoelectric system may comprise a first heat exchanger, a thermoelectric generator, one or more heat conducting units, a second heat exchanger, and a container configured to (i) contain the second heat exchanger and a thermal storage material and (ii) insulate the thermal storage material from an external to the container.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: The present disclosure provides wearable electronic devices with thermoelectric devices. The wearable electronic device may comprise a user interface for displaying information to a user. The thermoelectric device may comprise a heat collecting unit, a thermoelectric element, and a heat expelling unit. During use, the thermoelectric element may generate power upon the flow of thermal energy from the heat collecting unit, across the thermoelectric element, and to the heat expelling unit.

Abstract: The present disclosure provides thermoelectric cooling devices, systems and methods. A thermoelectric system of the present disclosure may comprise a chamber configured to hold the beverage container; at least one actuator configured to rotate the beverage container within the chamber; a source of a thermal coupling medium in fluid communication with the chamber, wherein the thermal coupling medium is configured to thermally couple the beverage container to one or more walls of the chamber; a heat sink; and a plurality of thermoelectric cooling elements surrounding the chamber, wherein the plurality of thermoelectric cooling elements is configured to transfer heat from the beverage container to the heat sink upon application of power to the plurality of thermoelectric cooling elements, thereby cooling the beverage container.

Abstract: The present disclosure provides a thermoelectric element comprising a flexible semiconductor substrate having exposed surfaces with a metal content that is less than about 1% as measured by x-ray photoelectron spectroscopy (XPS) and a figure of merit (ZT) that is at least about 0.25, wherein the flexible semiconductor substrate has a Young's Modulus that is less than or equal to about 1×106 pounds per square inch (psi) at 25° C.

Abstract: The present disclosure provides wearable electronic devices with thermoelectric devices. The wearable electronic device may comprise a user interface for displaying information to a user. The thermoelectric device may comprise a heat collecting unit, a thermoelectric element, and a heat expelling unit. During use, the thermoelectric element may generate power upon the flow of thermal energy from the heat collecting unit, across the thermoelectric element, and to the heat expelling unit.

Abstract: The present disclosure provides wearable electronic devices with thermoelectric devices. The wearable electronic device may comprise a user interface for displaying information to a user. The thermoelectric device may comprise a heat collecting unit, a thermoelectric element, and a heat expelling unit. During use, the thermoelectric element may generate power upon the flow of thermal energy from the heat collecting unit, across the thermoelectric element, and to the heat expelling unit.

Abstract: The present disclosure provides wearable electronic devices with thermoelectric devices. The wearable electronic device may comprise a user interface for displaying information to a user. The thermoelectric device may comprise a heat collecting unit, a thermoelectric element, and a heat expelling unit. During use, the thermoelectric element may generate power upon the flow of thermal energy from the heat collecting unit, across the thermoelectric element, and to the heat expelling unit.

Abstract: The present disclosure provides a thermoelectric power management system that includes an electronic device comprising a user interface and a thermoelectric device. The thermoelectric device comprises a thermoelectric unit, a coupler, at least one fastener coupled to the thermoelectric unit and a separate heat expelling unit in thermal communication with the thermoelectric unit. The thermoelectric unit comprises a heat transfer surface that rests adjacent to a body surface of a user and the coupler removably secures the electronic device against the thermoelectric unit. Moreover, the at least one fastener secures the thermoelectric device to the body surface of the user and the thermoelectric device, during use, generates power upon flow of thermal energy from the heat transfer surface to the separate heat expelling unit.

Abstract: The present disclosure provides a thermoelectric element comprising a flexible semiconductor substrate having exposed surfaces with a metal content that is less than about 1% as measured by x-ray photoelectron spectroscopy (XPS) and a figure of merit (ZT) that is at least about 0.25, wherein the flexible semiconductor substrate has a Young's Modulus that is less than or equal to about 1×106 pounds per square inch (psi) at 25° C.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: The present disclosure provides wearable electronic devices with thermoelectric devices. The wearable electronic device may comprise a user interface for displaying information to a user. The thermoelectric device may comprise a heat collecting unit, a thermoelectric element, and a heat expelling unit. During use, the thermoelectric element may generate power upon the flow of thermal energy from the heat collecting unit, across the thermoelectric element, and to the heat expelling unit.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: The present disclosure provides a thermoelectric element comprising a flexible semiconductor substrate having exposed surfaces with a metal content that is less than about 1% as measured by x-ray photoelectron spectroscopy (XPS) and a figure of merit (ZT) that is at least about 0.25, wherein the flexible semiconductor substrate has a Young's Modulus that is less than or equal to about 1×106 pounds per square inch (psi) at 25° C.

Abstract: A gradient in the composition of at least one of the elements of a metal-based semiconductor layer is introduced as a function of depth through the layer. The gradient(s) influence the current density response of the device at different gate voltages. In some embodiments, the composition of an element (e.g. Ga) is greater at the interface between the metal-based semiconductor layer and the source/drain layers. The shape of the gradient profile is one of linear, stepped, parabolic, exponential, and the like.

Abstract: The present disclosure provides a thermoelectric element comprising a flexible semiconductor substrate having exposed surfaces with a metal content that is less than about 1% as measured by x-ray photoelectron spectroscopy (XPS) and a figure of merit (ZT) that is at least about 0.25, wherein the flexible semiconductor substrate has a Young's Modulus that is less than or equal to about 1×106 pounds per square inch (psi) at 25° C.