Patents by Inventor Haifan Liang
Haifan Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130065355Abstract: A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.Type: ApplicationFiled: September 12, 2011Publication date: March 14, 2013Applicant: INTERMOLECULAR, INC.Inventors: Haifan Liang, Jeroen Van Duren, Zhi-Wen Sun
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Publication number: 20130056054Abstract: Back contact materials and processes for use in the manufacturing of CdTe, CIGS, and CZTS TFPV superstrate solar cells are described. High conductivity, high work function materials of ReO3 are used to form the ohmic contact to the absorber layers of the TFPV solar cells. The ReO3 materials may be implemented alone or in combination with other high conductivity materials to for the back contact layer stack.Type: ApplicationFiled: September 6, 2011Publication date: March 7, 2013Applicant: INTERMOLECULAR, INC.Inventor: Haifan Liang
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Publication number: 20120261395Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: May 31, 2012Publication date: October 18, 2012Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Publication number: 20120234801Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: May 31, 2012Publication date: September 20, 2012Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash J. MAYUR, Aaron HUNTER, Bruce ADAMS, Joseph Michael RANISH
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Publication number: 20120238111Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: May 31, 2012Publication date: September 20, 2012Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Publication number: 20120234800Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: May 31, 2012Publication date: September 20, 2012Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash J. MAYUR, Aaron HUNTER, Bruce ADAMS, Joseph Michael RANISH
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Patent number: 8242407Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: GrantFiled: June 28, 2010Date of Patent: August 14, 2012Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Publication number: 20100264123Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: June 28, 2010Publication date: October 21, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Patent number: 7772134Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: GrantFiled: August 24, 2009Date of Patent: August 10, 2010Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Publication number: 20090311880Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: August 24, 2009Publication date: December 17, 2009Applicant: Applied Materials, Inc.Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash J. MAYUR, Aaron HUNTER, Bruce ADAMS, Joseph Michael RANISH
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Patent number: 7611976Abstract: Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.Type: GrantFiled: July 5, 2006Date of Patent: November 3, 2009Assignee: Applied Materials, Inc.Inventors: Yi Ma, Khaled Z. Ahmed, Kevin L. Cunningham, Robert C. McIntosh, Abhilash J. Mayur, Haifan Liang, Mark Yam, Toi Yue Becky Leung, Christopher Olsen, Shulin Wang, Majeed Foad, Gary Eugene Miner
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Patent number: 7595208Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: GrantFiled: August 10, 2007Date of Patent: September 29, 2009Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Publication number: 20080230154Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.Type: ApplicationFiled: February 28, 2008Publication date: September 25, 2008Applicant: APPLIED MATERIALS, INC.Inventors: Luc Van Autryve, Chris D. Bencher, Dean Jennings, Haifan Liang, Abhilash J. Mayur, Mark Yam, Wendy H. Yeh, Richard A. Brough
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Publication number: 20070293058Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: August 10, 2007Publication date: December 20, 2007Applicant: APPLIED MATERIALS, INC.Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash MAYUR, Aaron HUNTER, Bruce ADAMS, Joseph RANISH
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Publication number: 20070243721Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.Type: ApplicationFiled: June 14, 2007Publication date: October 18, 2007Inventors: LUC AUTRYVE, Christopher Bencher, Dean Jennings, Haifan Liang, Abhilash Mayur, Mark Yam, Wendy Yeh, Richard Brough
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Patent number: 7279721Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: GrantFiled: April 13, 2005Date of Patent: October 9, 2007Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Patent number: 7262106Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.Type: GrantFiled: January 15, 2004Date of Patent: August 28, 2007Assignee: Applied Materials, Inc.Inventors: Luc Van Autryve, Chris D. Bencher, Dean Jennings, Haifan Liang, Abhilash J. Mayur, Mark Yam, Wendy H. Yeh, Richard A. Brough
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Publication number: 20060292808Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.Type: ApplicationFiled: August 24, 2006Publication date: December 28, 2006Inventors: Luc Autryve, Chris Bencher, Dean Jennings, Haifan Liang, Abhilash Mayur, Mark Yam, Wendy Yeh, Richard Brough
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Publication number: 20060286763Abstract: Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.Type: ApplicationFiled: July 5, 2006Publication date: December 21, 2006Inventors: Yi Ma, Khaled Ahmed, Kevin Cunningham, Robert McIntosh, Abhilash Mayur, Haifan Liang, Mark Yam, Toi Leung, Christopher Olsen, Shulin Wang, Majeed Foad, Gary Miner
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Publication number: 20060234458Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: April 13, 2005Publication date: October 19, 2006Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Ranish