Abstract: A robot includes a sensor including an electrode portion of a sensor for detecting approach of or contact with another object is formed on an outer surface or an inner surface of an exterior member, and in which a drive unit of the robot main body is controlled so as to avoid approach between the robot body and the other object based on an output signal of the sensor.

Abstract: To provide a photoelectric conversion element capable of improving afterimage characteristics. It includes a first electrode and a second electrode arranged to face each other, and a photoelectric conversion layer provided between the first electrode and the second electrode and including a first organic semiconductor material and a second organic semiconductor material, in which the first organic semiconductor material or the second organic semiconductor material includes an organic semiconductor having a D3/Dtot of 0.01 or more.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×101° s?1 to 1×1016 s?1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×1010 s?1 to 1×1016 s?1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.

Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

Abstract: A robot includes a robot arm, a first member and a second member placed between a base of the robot arm and an installation part, a first force sensor and a second force sensor placed in contact with both the first member and the second member on a plane in a normal direction along a direction in which the base and the installation part are arranged, an on-virtual line component calculation part that obtains a first translational force component on a virtual line from output of the first force sensor and obtains a second translational force component on the virtual line from output of the second force sensor, and a determination part that outputs a signal when determining that the first force sensor or the second force sensor is abnormal based on a difference between the first translational force component and the second translational force component.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×1010 s?1 to 1×1016 s?1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.

Abstract: A robot includes a robot body including a base, a first movable section provided turnably with respect to the base, and a second movable section provided turnably with respect to the first movable section, a first proximity sensor for detecting contact with or approach of an object to the first movable section, and a second proximity sensor for detecting contact with or approach of the object to the second movable section. The first proximity sensor includes a first electrode section having a capacitance that changes according to the contact or approach of the object, and a first circuit section for detecting the capacitance of the first electrode section. The second proximity sensor includes a second electrode section having a capacitance that changes according to the contact or approach of the object, and a second circuit section for detecting the capacitance of the second electrode section.

Abstract: A robot includes a sensor including an electrode portion of a sensor for detecting approach of or contact with another object is formed on an outer surface or an inner surface of an exterior member, and in which a drive unit of the robot main body is controlled so as to avoid approach between the robot body and the other object based on an output signal of the sensor.

Abstract: A robot includes a robot arm, a relay member fixed to a distal end part of the robot arm using a screw in a direction along a center axis of the robot arm and having an outer circumferential surface about the center axis, and a structure having an end effector and fixed in contact with the outer circumferential surface to the robot arm via the relay member.

Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

Abstract: A semiconductor element mounted on an insulating resin layer formed on a wiring layer is sealed by a sealing resin. On the wiring layer, a protruding electrode protruding to the side of the semiconductor element and a protruding section are integrally formed with the wiring layer, respectively. The protruding electrode is electrically connected to an element electrode of the semiconductor element by penetrating the insulating resin layer. The protruding section is arranged to surround the semiconductor element along the four sides of the semiconductor element, and is embedded in the sealing resin up to a position above a section where the protruding electrode and the element electrode are bonded.

Abstract: The invention provides a solder structure which is least likely to develop Sn whiskers and a method for forming such a solder structure. The solder structure includes an Sn alloy capable of a solid-liquid coexistent state and an Au (or Au alloy) coating covering at least part of the surface of the Sn alloy. The Au covering is a film that covers and coats at least part of the surface of the Sn alloy. As a preferable mode, the Au coating forms a netlike structure on the surface of the Sn alloy. The thickness of the Au coating is, for instance, 1 to 5 ?m.

Abstract: A video server selects video-sound data that requires an update of subtitle data from a video-sound file directly transmitted from a video storage apparatus, and transmits the selected video-sound data to a subtitle superimposition control apparatus. When a time code in a data block of the video-sound data matches with the time code assigned to replacement subtitle data, the subtitle superimposition control apparatus superimposes the replacement subtitle data onto the video-sound data and transmits the replaced data to the video server.

Abstract: A device mounting board includes: an insulating resin layer; a wiring layer disposed on one main surface of the insulating resin layer; and a bump electrode connected electrically to the wiring layer and protruding on a side of the insulating resin layer from the wiring layer. A side surface of the bump electrode is curved inwardly toward the center axis of the bump electrode as viewed in a cross section including the center axis of the bump electrode, and the radius of curvature of the side surface changes continuously from a wiring layer end to a head end of the bump electrode.

Abstract: A device mounting board includes: an insulating resin layer; a wiring layer disposed on one main surface of the insulating resin layer; and a bump electrode connected electrically to the wiring layer and protruding on a side of the insulating resin layer from the wiring layer. A side surface of the bump electrode is curved inwardly toward the center axis of the bump electrode as viewed in a cross section including the center axis of the bump electrode, and the radius of curvature of the side surface changes continuously from a wiring layer end to a head end of the bump electrode.

Abstract: A semiconductor element mounted on an insulating resin layer formed on a wiring layer is sealed by a sealing resin. On the wiring layer, a protruding electrode protruding to the side of the semiconductor element and a protruding section are integrally formed with the wiring layer, respectively. The protruding electrode is electrically connected to an element electrode of the semiconductor element by penetrating the insulating resin layer. The protruding section is arranged to surround the semiconductor element along the four sides of the semiconductor element, and is embedded in the sealing resin up to a position above a section where the protruding electrode and the element electrode are bonded.

Abstract: The invention provides a solder structure which is least likely to develop Sn whiskers and a method for forming such a solder structure. The solder structure includes an Sn alloy capable of a solid-liquid coexistent state and an Au (or Au alloy) coating covering at least part of the surface of the Sn alloy. The Au covering is a film that covers and coats at least part of the surface of the Sn alloy. As a preferable mode, the Au coating forms a netlike structure on the surface of the Sn alloy. The thickness of the Au coating is, for instance, 1 to 5 ?m.

Abstract: There is provided a voice recognition device and a voice recognition method that enhance the function of noise adaptation processing in voice recognition processing and reduce the capacity of a memory being used. Acoustic models are subjected to clustering processing to calculate the centroid of each cluster and the differential vector between the centroid and each model, model composition between each kind of assumed noise model and the calculated centroid is carried out, and the centroid of each composition model and the differential vector are stored in a memory. In the actual recognition processing, the centroid optimal to the environment estimated by the utterance environmental estimation is extracted from the memory, model restoration is carried out on the extracted centroid by using the differential vector stored in the memory, and noise adaptation processing is executed on the basis of the restored model.