Abstract: A flow passage forming member includes flow passage forming member main bodies 140 and 146 that are formed of a resin material and define at least a part of a flow passage, a metal protective film 200 that is provided on a surface of the flow passage forming member main body 140 and a surface of the flow passage forming member main body 146 defining at least the flow passage and is formed of a metal material, and a protective film 210 that is laminated on the metal protective film 200 and contains an oxide or a nitride of at least on element selected from the group consisting of tantalum (Ta), titanium (Ti), zirconium (Zr), niobium (bib), vanadium (V), hafnium (Hf), silicon (Si), aluminum (Al), tungsten (W), and yttrium (Y).

Abstract: A shaping stage has a shaping face where a shaping material is deposited and is used in a three-dimensional shaping apparatus by being subjected to temperature control. The shaping stage includes a first member having a plurality of recess portions or penetration portions and a first shaping face portion that is present in peripheries of the recess portions or the penetration portions and that is included in the shaping face, and a second member that is placed inside the recess portions or the penetration portions, that has a second shaping face portion included in the shaping face, and that has a thermal expansion coefficient different from the first member.

Abstract: A manufacturing method for a three-dimensional formed object for manufacturing the three-dimensional formed object by stacking layers includes supplying a first forming material of the three-dimensional formed object to a contour region of the three-dimensional formed object in the layers, applying energy to the first forming material supplied to the contour region to solidify the first forming material, supplying a second forming material to a region corresponding to the three-dimensional formed object, the region being a contact region in contact with the contour region, and applying energy to the second forming material supplied to the contact region to solidify the second forming material.

Abstract: A shaping stage has a shaping face where a shaping material is deposited and is used in a three-dimensional shaping apparatus by being subjected to temperature control. The shaping stage includes a first member having a plurality of recess portions or penetration portions and a first shaping face portion that is present in peripheries of the recess portions or the penetration portions and that is included in the shaping face, and a second member that is placed inside the recess portions or the penetration portions, that has a second shaping face portion included in the shaping face, and that has a thermal expansion coefficient different from the first member.

Abstract: A manufacturing method for a three-dimensional formed object for manufacturing the three-dimensional formed object by stacking layers includes supplying a first forming material of the three-dimensional formed object to a contour region of the three-dimensional formed object in the layers, applying energy to the first forming material supplied to the contour region to solidify the first forming material, supplying a second forming material to a region corresponding to the three-dimensional formed object, the region being a contact region in contact with the contour region, and applying energy to the second forming material supplied to the contact region to solidify the second forming material.

Abstract: A three-dimensional forming device is a three-dimensional forming device which forms a three-dimensional formed article by stacking a layer using a sintering material containing a metal powder, a binder, and a solvent, and includes a material supply section which supplies the sintering material to a predetermined material supply region, a first heating section which heats the predetermined material supply region, a second heating section which heats the sintering material supplied to the predetermined material supply region from the material supply section, and an energy irradiation section which supplies energy for sintering the metal powder.

Abstract: A method for manufacturing an optical element having a surface-emitting type semiconductor laser and a photodetector element that detects light emitted from the surface-emitting type semiconductor laser, the method including the steps of: (a) laminating, above a substrate, semiconductor layers for forming a first mirror, an active layer, a second mirror, a photoabsorption layer, an etching stopper layer and a contact layer; (b) patterning the semiconductor layers to form at least a photoabsorption layer, an etching stopper layer and a contact layer; (c) forming an electrode above the contact layer; and (d) etching a portion of the contact layer until an upper surface of the etching stopper layer is exposed.

Abstract: To provide a light-receiving element that is capable of high-speed operation and includes an optical element with controlled setting position, shape and size, a manufacturing method for the light-receiving element, and an optical module and an optical transmitting device including the light-receiving element, a light-receiving element includes a base member provided over a light-receiving surface, and an optical element provided on a top surface of the base member.

Abstract: A surface-emitting type device includes a substrate including a first face and a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, an emission section formed above the first face, and a rectification section formed above the second face, wherein the emission section includes a first semiconductor layer of a first conductivity type, an active layer formed above the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed above the active layer, the rectification section includes a first semiconductor layer of the second conductivity type, and a second semiconductor layer of the first conductivity type formed above the first semiconductor layer, the first semiconductor layer of the emission section and the first semiconductor layer of the rectification section are formed by a common process and include the same impurity, the emission section and the rectification section are electrically connect

Abstract: To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting type wafer includes a substrate 10 and a plurality of surface-emitting type elements 1 formed above the substrate 10. Each of the surface-emitting type elements 1 includes a light emitting element section 20, first and second electrodes 30, 32 for driving the light emitting element section 20, and a rectification element section 40. The rectification element section 40 is connected in parallel between the first and second electrodes 30, 32, and has a rectification action in a reverse direction with respect to the light emitting element section 20. The plurality of surface-emitting type elements 1 are connected in series in a direction in which forward directions of the respective light emitting element sections 20 coincide with one another.

Abstract: A surface-emitting type device includes a substrate including a first face, a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, and a third face that is tilted with respect to the second face and has a plane index equal to the plane index of the first face, an emission section formed above the first face, and a rectification section formed above each of the second face and the third face, wherein the emission section includes a first semiconductor layer of a first conductivity type, an active layer formed above the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed above the active layer, the rectification section includes a first semiconductor layer of the second conductivity type formed above the second face, and a second semiconductor layer of the first conductivity type formed continuously with the first semiconductor layer above the third face, at least a portion of the first semico

Abstract: To provide a light-receiving element capable of high-speed operation including an optical member whose setting position, shape and size are advantageously controlled and its manufacturing method, and an optical module and an optical transmitting device including the light-receiving element, a light-receiving element includes a columnar part provided in a substrate. A top surface of the columnar part includes a receiving surface, and an optical member is provided on the top surface of the columnar part. The columnar part includes a first conductive type layer, a light absorbing layer, and a second conductive type layer. The light absorbing layer is formed between the first conductive type layer and the second conductive type layer.

Abstract: A method for manufacturing an optical device, the method comprising the steps of: (a) laminating, above a substrate, a first semiconductor layer of a first conductivity type, a second semiconductor layer that functions as an active layer, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer composed of a material having a greater etching rate than the third semiconductor layer, a fifth semiconductor layer that functions as a capacitance reducing section, and a sixth semiconductor layer of the first conductivity type; (b) patterning at least the third, fourth, fifth and sixth semiconductor layers, thereby forming a light emitting device section including a first semiconductor section of the first conductivity type, a second semiconductor section that functions as an active layer and a third semiconductor section of the second conductivity type which are disposed over the substrate in this order from a side of the substrate, and a rectification device section including a fourt

Abstract: To provide a light-receiving element that is capable of high-speed operation and includes an optical element with controlled setting position, shape and size, a manufacturing method for the light-receiving element, and an optical module and an optical transmitting device including the light-receiving element, a light-receiving element includes a base member provided over a light-receiving surface, and an optical element provided on a top surface of the base member.

Abstract: A method for manufacturing an optical element having a surface-emitting type semiconductor laser and a photodetector element that detects light emitted from the surface-emitting type semiconductor laser, the method including the steps of: (a) laminating, above a substrate, semiconductor layers for forming a first mirror, an active layer, a second mirror, a photoabsorption layer, an etching stopper layer and a contact layer; (b) patterning the semiconductor layers to form at least a photoabsorption layer, an etching stopper layer and a contact layer; (c) forming an electrode above the contact layer; and (d) etching a portion of the contact layer until an upper surface of the etching stopper layer is exposed.

Abstract: To provide a light-receiving element that is capable of high-speed operation and includes an optical element with controlled setting position, shape and size, a manufacturing method for the light-receiving element, and an optical module and an optical transmitting device including the light-receiving element, a light-receiving element includes a base member provided over a light-receiving surface, and an optical element provided on a top surface of the base member.

Abstract: A method is provided to provide a photodetector that can enhance the light receiving sensitivity with a relatively simple structure, and that can maintain a high speed responsiveness. A photodetector having a MSM (Metal-Semiconductor-Metal) structure, including a substrate, a multilayer film that is disposed over the substrate and includes a low refractive index layer and a high refractive index layer that are alternately laminated as a unit cycle. At least one of the low refractive index layer and the high refractive index layer is a photoabsorption layer composed of semiconductor, and a portion that is embedded in the multilayer film, the portion having at least one pair of opposing electrodes within the multilayer film.

Abstract: To provide a optical element array in which a plurality of optical elements can be monolithically integrated, and each of the optical elements can be independently driven.

Abstract: A surface-emitting type device includes a substrate including a first face and a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, an emission section formed above the first face, and a rectification section formed above the second face, wherein the emission section includes a first semiconductor layer of a first conductivity type, an active layer formed above the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed above the active layer, the rectification section includes a first semiconductor layer of the second conductivity type, and a second semiconductor layer of the first conductivity type formed above the first semiconductor layer, the first semiconductor layer of the emission section and the first semiconductor layer of the rectification section are formed by a common process and include the same impurity, the emission section and the rectification section are electrically connect

Abstract: A surface-emitting type device includes a substrate including a first face, a second face that is tilted with respect to the first face and has a plain index different from a plain index of the first face, and a third face that is tilted with respect to the second face and has a plane index equal to the plane index of the first face, an emission section formed above the first face, and a rectification section formed above each of the second face and the third face, wherein the emission section includes a first semiconductor layer of a first conductivity type, an active layer formed above the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed above the active layer, the rectification section includes a first semiconductor layer of the second conductivity type formed above the second face, and a second semiconductor layer of the first conductivity type formed continuously with the first semiconductor layer above the third face, at least a portion of the first semico