Abstract: A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of phase change cells (54) variable in resistance is provided between the first electrode (51) and the second electrode (56). A non-uniform tunnel barrier (540) is provided adjacent each of the recording layer and the first electrode. In use, the first electrode is in electrical communication with the non-uniform tunnel barrier, the first electrode for electrically communicating with the second electrode via the non-uniform tunnel barrier.

Abstract: Sensors (1) for sensing accelerations are provided with accelerometers (11) for measuring accelerations, with magnetometers (12) for measuring magnetic fields, and with processors (13) for, in response to acceleration measurements and magnetic field measurements, judging the accelerations. The processors (13) may comprise acceleration units (14) for comparing acceleration signals with acceleration thresholds, and magnetic field units (15) for comparing changes of magnetic field signals per time interval with rate thresholds. The processors (13) may further comprise decision units (17) for, in response to comparison results from the acceleration units (14) and the magnetic field units (15), deciding whether a total acceleration forms part of a tumbling free-fall or a non-tumbling free-fall or not. The processors (13) may yet further comprise distinguishing units (18) and control units (19). Devices (2) may comprise sensors (1).

Abstract: A non-volatile memory is disclosed. A contiguous layer of phase change material is provided. Proximate the contiguous layer of phase change material is provided a first pair of contacts for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material for inducing heating thereof within a first region. Also adjacent the contiguous layer is provided a second pair of contacts disposed for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material for inducing heating thereof within a second region thereof, the second region different from the first region.

Abstract: A non-volatile memory is disclosed. A contiguous layer of phase change material is provided. Proximate the contiguous layer of phase change material is provided a first pair of contacts for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material for inducing heating thereof within a first region. Also adjacent the contiguous layer is provided a second pair of contacts disposed for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material for inducing heating thereof within a second region thereof, the second region different from the first region.

Abstract: A non-volatile memory is disclosed. A contiguous layer of phase change material (21; 31; 61; 71; 81) is provided. Proximate the contiguous layer of phase change material (21; 31; 61; 71; 81) is provided a first pair of contacts (22; 32; 62; 72; 82) for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material (21; 31; 61; 71; 81) for inducing heating thereof within a first region. Also adjacent the contiguous layer is provided a second pair of contacts (22; 32; 62; 72; 82) disposed for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material (21; 31; 61; 71; 81) for inducing heating thereof within a second region thereof, the second region different from the first region. This pairs of contacts may be disposed on the same side or on opposing sides of the phase change material layer.

Abstract: Magnetic field sensors (1) comprising field detectors (10) for detecting magnetic fields are provided with environment detectors (11) for detecting environments and with processors (12) for, in response to detected environments, performing processes such as loading calibration parameter sets and (re)calibrations for the field detectors (10), to allow the magnetic field sensors (1) to be used in different subsequent environments. The environment detectors (11) may comprise code detectors for detecting codes indicative for environments and may comprise user interfaces (13) for, in response to detected environments and via user interactions, selecting processes to be performed by the processors (12). Devices (2) comprise magnetic field sensors (1). Apparatuses (3) such as cradles removably fix the devices (2) and may comprise code generators (30) for generating the codes indicative for the environments.

Abstract: Systems comprising generating devices comprising sensors for generating sensor signals representing orientations of the generating devices are provided with comparing devices comprising comparators for comparing the sensor signals with reference signals for interpreting the orientations, to increase the number of possible applications. The generating devices and the comparing devices may form parts of one apparatus or of different apparatuses and then communicate wiredly or wirelessly via radio or infrared. Reference sensors for generating the reference signals and/or reference memories for storing the reference signals may be located in the comparing devices and/or in sources and then communicate wiredly or wirelessly via radio or infrared. Further comparators in the comparing devices may introduce adjustable sensitivities.

Abstract: A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of phase change cells (54) variable in resistance is provided between the first electrode (51) and the second electrode (56). A non-uniform tunnel barrier (540) is provided adjacent each of the recording layer and the first electrode. In use, the first electrode is in electrical communication with the non-uniform tunnel barrier, the first electrode for electrically communicating with the second electrode via the non-uniform tunnel barrier.

Abstract: A non-volatile memory is disclosed. A contiguous layer of phase change material (21; 31; 61; 71; 81) is provided. Proximate the contiguous layer of phase change material (21; 31; 61; 71; 81) is provided a first pair of contacts (22; 32; 62; 72; 82) for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material (21; 31; 61; 71; 81) for inducing heating thereof within a first region. Also adjacent the contiguous layer is provided a second pair of contacts (22; 32; 62; 72; 82) disposed for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material (21; 31; 61; 71; 81) for inducing heating thereof within a second region thereof, the second region different from the first region. This pairs of contacts may be disposed on the same side or on opposing sides of the phase change material layer.

Abstract: A high-performance, integrated AMR sensor has compensation and flipping coils for signal conditioning of the sensor output. At least one of the coils is formed in the laminate that connects the AMR sensor with its IC within a single package. As a result, the dimensions of the die area of the AMR sensor and the package size can be kept small.

Abstract: Sensors (1) for sensing accelerations are provided with accelerometers (11) for measuring accelerations, with magnetometers (12) for measuring magnetic fields, and with processors (13) for, in response to acceleration measurements and magnetic field measurements, judging the accelerations. The processors (13) may comprise acceleration units (14) for comparing acceleration signals with acceleration thresholds, and magnetic field units (15) for comparing changes of magnetic field signals per time interval with rate thresholds. The processors (13) may further comprise decision units (17) for, in response to comparison results from the acceleration units (14) and the magnetic field units (15), deciding whether a total acceleration forms part of a tumbling free-fall or a non-tumbling free-fall or not. The processors (13) may yet further comprise distinguishing units (18) and control units (19). Devices (2) may comprise sensors (1).

Abstract: Magnetic field sensors (1) comprising field detectors (10) for detecting magnetic fields are provided with environment detectors (11) for detecting environments and with processors (12) for, in response to detected environments, performing processes such as loading calibration parameter sets and (re)calibrations for the field detectors (10), to allow the magnetic field sensors (1) to be used in different subsequent environments. The environment detectors (11) may comprise code detectors for detecting codes indicative for environments and may comprise user interfaces (13) for, in response to detected environments and via user interactions, selecting processes to be performed by the processors (12). Devices (2) comprise magnetic field sensors (1). Apparatuses (3) such as cradles removably fix the devices (2) and may comprise code generators (30) for generating the codes indicative for the environments.

Abstract: The present invention provides an array (20) of magnetoresistive memory elements (10) provided with at least one data retention indicator device (50). The at least one data retention indicator device (50) comprises a first magnetic element (51) and a second magnetic element (52) each having a pre-set magnetisation direction, the pre-set magnetisation direction of the first and second magnetic elements (51, 52) being different from each other. The first and second magnetic elements (51, 52) are suitable for aligning their magnetisation direction with magnetic field lines of an externally applied magnetic field exceeding a detection threshold value. According to the present invention, a parameter of the at least one data retention indicator device (50) is chosen so as to set the detection threshold value of the externally applied magnetic field to be detected.

Abstract: The present invention provides an array of magnetoresistive memory elements comprising a magnetic field sensor unit for measuring an external magnetic field in the vicinity of the magnetoresistive memory elements, and means for temporarily disabling any programming operation when the measured external magnetic field exceeds a threshold value. A corresponding method is also provided.

Abstract: A digital magnetic memory cell device for read and/or write operation includes a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system formed as an AAF system. The AAF system includes an AAF layer composite and at least one reference layer. The reference layer system includes at least one ferromagnetic layer arranged adjacent to a magnetic layer of the AAF layer composite in which the thickness of the antiferromagnetic layer is dimensioned to have a uniaxial anisotropy.

Abstract: The present invention provides a magnetoresistive memory device (30) comprising an array (20) of magnetoresistive memory elements (10) and at least one magnetic field sensor element (32), wherein the magnetoresistive memory device (30) comprises a partial or non-homogeneous shielding means (40, 41) so as to shield the array (20) of magnetoresistive memory elements (10) differently from an external magnetic field than the at least one magnetic field sensor element (32). With “differently” is meant that there is a minimum shielding difference of 5%, preferably a minimum shielding difference of 10%. The present invention also provides a corresponding shielding method.

Abstract: A sensor for contactlessly detecting currents, has a sensor element having a magnetic tunnel junction (MTJ), and detection circuitry, the sensor element having a resistance which varies with the magnetic field, and the detection circuitry is arranged to detect a tunnel current flowing through the tunnel junction. The sensor element may share an MTJ stack with memory elements. Also it can provide easy integration with next generation CMOS processes, including MRAM technology, be more compact, and use less power. Solutions for increasing sensitivity of the sensor, such as providing a flux concentrator, and for generating higher magnetic fields with a same current, such as forming L-shaped conductor elements, are given. The greater sensitivity enables less post processing to be used, to save power for applications such as mobile devices. Applications include current sensors, built-in current sensors, and IDDQ and IDDT testing, even for next generation CMOS processes.

Abstract: A digital magnetic memory cell device for read and/or write operations includes a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system formed as an AAF system. The device includes an AAF layer composite and at least one reference layer. The AAF layer composite has two magnetic layers, and the reference layer system includes at least one antiferromagnetic layer arranged adjacent to a magnetic layer of the AAF layer composite. The magnetic layer is remote from the antiferromagnetic layer and has a uniaxial anisotropy pointing in a first direction. The magnetization of the antiferromagnetic layer is oriented in a second direction. The anisotropy direction of the magnetic layer and the magnetization direction of the antiferromagnetic layer are at an angle with respect to one another.

Abstract: The present invention relates to magnetic or magnetoresistive random access memories (MRAMs), and more particularly to a method and a device for modulating a generated magnetic field during a write operation of such a magnetoresistive memory device. The present invention provides a matrix (30) with magnetoresistive memory cells (31) logically organized in rows and columns, each memory cell (31) including a magnetoresistive element (32). The matrix (30) comprises a set of row lines (33), a row line being a continuous conductive strip which is magnetically couplable to the magnetoresistive element (32) of each of the memory cells (31) of a row.

Abstract: The present invention relates to magnetic or magnetoresistive random access memories (MRAMs). The present invention provides an array with magnetoresistive memory cells arranged in logically organized rows and columns, each memory cell including a magnetoresistive element (32A, 32B). The matrix comprises a set of column lines (34), a column line (34) being a continuous conductive strip which is magnetically couplable to the magnetoresistive element (32A, 32B) of each of the memory cells of a column. A column line (34) is shared by two adjacent columns, the shared column line (34) having an area which extends over substantially the magnetoresistive elements of the two adjacent columns sharing that column line. According to the present invention, the array furthermore comprises at least one supplementary column line (36A, 36B) per column for generating a localized magnetic field in the magnetoresistive elements (32A, 32B) of one of the adjacent columns sharing the column line (34).