Abstract: Reference magnetic elements or bits with a range of magnetic volumes smaller than the minimum size used for actual data storage are written or patterned in the data storage device. The reference elements or bits have dimensions such that their magnetization will relax in a shorter time than that of the minimum expected relaxation time of the storage elements or bits. Probing of the magnetization of the reference elements or bits allows the detection of the probable onset of magnetization relaxation in the storage elements or bits therefore signaling that the re-writing (re-magnetizing) of the storage elements or bits is necessary. Such a scheme can be organized over rows, columns, or sectors.

Abstract: The layer system having an increased magnetoresistive effect contains at least one soft magnetic detection layer, a non-magnetic decoupling layer, which rests on the detection layer, and a layer partial system, which is located at a distance due to the decoupling layer, forms an artificial antiferromagnet, and which is decoupled from the detection layer. This partial system comprises a first ferromagnetic and a second ferromagnetic layer. The first ferromagnetic layer should be antiferromagnetically coupled (K2) to the second ferromagnetic layer via a non-magnetic coupling layer. In addition, the side of the first ferromagnetic layer facing away from the coupling layer should be provided with an antiferromagnetic additional layer and be exchange-coupled (K3) thereto and, in addition, should have a material composition that differs from the second ferromagnetic layer.

Abstract: The layer system having an increased magnetoresistive effect contains at least one soft magnetic detection layer, a non-magnetic decoupling layer, which rests on the detection layer, and a layer partial system, which is located at a distance due to the decoupling layer, forms an artificial antiferromagnet, and which is decoupled from the detection layer. This partial system comprises a first ferromagnetic and a second ferromagnetic layer. The first ferromagnetic layer should be antiferromagnetically coupled (K2) to the second ferromagnetic layer via a non-magnetic coupling layer. In addition, the side of the first ferromagnetic layer facing away from the coupling layer should be provided with an antiferromagnetic additional layer and be exchange-coupled (K3) thereto and, in addition, should have a material composition that differs from the second ferromagnetic layer.

Abstract: A digital Digital magnetic memory cell device for read and/or write operations, having includes a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system formed as an AAF system. The device includes comprising an AAF layer composite and at least one reference layer. The the AAF layer composite h has E comprising two magnetic layers, and the reference layer system includes comprising at least one antiferromagnetic layer arranged adjacent to a magnetic layer of the AAF layer composite. The in which case the magnetic layer is (8) arranged remote from the antiferromagnetic layer e and has a uniaxial anisotropy pointing in a first direction. The , and in which case the magnetization of the antiferromagnetic layer (10), is oriented in a manner pointing in a second direction. The ,the anisotropy direction of the magnetic layer (8) and the magnetization direction of the antiferromagnetic layer are (10) being at an angle (&agr;) with respect to one another.

Abstract: The present invention concerns in a first aspect a spin-valve structure having a first and a second free ferromagnetic layer and a spacer layer positioned between the first and second free ferromagnetic layer, and wherein the first free ferromagnetic layer is positioned on a substrate. In a preferred embodiment of the invention, the first free ferromagnetic layer is in direct contact with the surface of the substrate.

Abstract: Digital magnetic memory cell device for read and/or write operations, having a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system formed as an AAF system, comprising an AAF layer composite and at least one reference layer, the reference layer system comprising at least one ferromagnetic layer arranged adjacent to a magnetic layer of the AAF layer composite, in which case the thickness of the antiferromagnetic layer (10) is dimensioned in such a way that it has a uniaxial anisotropy.

Abstract: The present invention concerns in a first aspect a spin-valve structure having a first and a second free ferromagnetic layer and a spacer layer positioned between the first and second free ferromagnetic layer, and wherein the first free ferromagnetic layer is positioned on a substrate. In a preferred embodiment of the invention, the first free ferromagnetic layer is in direct contact with the surface of the substrate.