Abstract: An objective and method of fabricating an objective, particularly a projection objective for microlithography, comprising a plurality of optical elements. In one example, the method comprises acts of determining groups of optically similar optical elements or surfaces having at least two members, determining wave front deformations by the optical elements or surfaces, determining the necessary corrections for the optical elements or surfaces of a group, and performing the corrections for a group at a group member.

Abstract: A mask having a multilayer coating of a specified period thickness distribution such as those used in lithography devices for producing semiconductor components. One problem of projection optics concerns pupil apodization which leads to imaging defects. As here proposed, the period thickness in the mask plane is selected so that it is greater than the period thickness for maximum reflectivity. As a result, not only does the apodization over the pupil become more symmetric but the intensity variation also becomes smaller overall.

Abstract: In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.

Abstract: The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source (18) for producing light in the EUV region. The projection exposure system further comprises a first optical system (19, 20, 21, 22, 23, 24) for illuminating a mask (25) by the light of the light source (18) and a second optical system (26, 27, 28, 29, 30, 31) for imaging the mask (25) on a component (32). At least one polarization-optical element (1) is disposed on the beam path between the light source (18) and the component (32).

Abstract: A projection objective provides a light path for a light bundle from an object field in an object plane to an image field in an image plane. The projection objective includes a first mirror (S1), a second mirror (S2), a third mirror (S3), a fourth mirror (S4), a fifth mirror (S5), a sixth mirror (S6), a seventh mirror (S7), and an eighth mirror (S8). The light path is provided via the eight mirrors, and in the light path exactly one intermediate image of the object field is provided.

Abstract: There is provided an EUV optical projection system. The system includes a first mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror, and a sixth mirror situated in an optical path from an object plane to an image plane, for imaging an object in said object plane into an image in said image plane. The image has a width W and a secant length SL, and the width W is greater than about 2 mm.

Abstract: For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens.

Abstract: An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M2) and a tertiary mirror (M3), such that a primary mirror (M1) and the secondary mirror (M2) form a first optical group (G1) and the tertiary mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G2). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M1) and the secondary mirror (M2). The secondary mirror (M2) is preferably concave, and the tertiary mirror (M3) is preferably convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15°.

Abstract: An objective and method of fabricating an objective, particularly a projection objective for microlithography, comprising a plurality of optical elements. In one example, the method comprises acts of determining groups of optically similar optical elements or surfaces having at least two members, determining wavefront deformations by the optical elements or surfaces, determining the necessary corrections for the optical elements or surfaces of a group, and performing the corrections for a group at a group member.

Abstract: A projection lens for a EUV microlithographic projection exposure apparatus comprises a diaphragm (BL) which is arranged at a distance (D) in front of a mirror (S2) of the lens. The diaphragm (BL) has a non-round aperture with an edge contour that may be configured such two rays of a light bundle disposed symmetrically with respect to a chief ray are treated equally, i.e. either both rays pass through the diaphragm aperture or both are blocked by the diaphragm.

Abstract: There is provided an EUV optical projection system. The system includes a first mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror, and a sixth mirror situated in an optical path from an object plane to an image plane, for imaging an object in said object plane into an image in said image plane. The image has a width W and a secant length SL, and the width W is greater than about 2 mm.

Abstract: A projection lens for a EUV microlithographic projection exposure apparatus comprises a diaphragm (BL) which is arranged at a distance (D) in front of a mirror (S2) of the lens. The diaphragm (BL) has a non-round aperture with an edge contour that may be configured such two rays of a light bundle disposed symmetrically with respect to a chief ray are treated equally, i.e. either both rays pass through the diaphragm aperture or both are blocked by the diaphragm.

Abstract: In accordance with the present invention, a projection exposure apparatus includes an illuminating system to illuminate a drivable micromirror array and an objective which projects the drivable micromirror array onto the photosensitive substrate. The objective includes mirrors which are arranged coaxial with respect to a common optical axis. The objective can be a catoptric objective and can have a numerical aperture at the substrate greater than 0.1 and can have an imaging scale ratio of greater than 20:1. The objective can also include at least two partial objectives with an intermediate image plane between the at least two partial objectives and can consist of mirrors that are coated with reflecting layers which are adapted to reflect two mutually separated operating wavelengths.

Abstract: The invention relates to masks comprising a multilayer coating of a specified period thickness distribution such as those used in lithography devices for producing semiconductor components. One problem of projection optics concerns pupil apodization which leads to imaging defects. The invention provides that the period thickness in the mask plane is selected so that it is greater than the period thickness ideal for maximum reflectivity. As a result, not only does the apodization over the pupil become more symmetric but the intensity variation also becomes smaller overall.

Abstract: An EUV optical projection system includes at least six mirrors (M1, M2, M3, M4, M5, M6) for imaging an object (OB) to an image (IM). At least one mirror pair is preferably configured as an at least phase compensating mirror pair. The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a second mirror (M2) and a third mirror (M3), such that a first mirror (M1) and the second mirror (M2) form a first optical group (G1) and the third mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G1). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the first mirror (M1) and the second mirror (M2). The second mirror (M2) is preferably convex, and the third mirror (M3) is preferably concave. The system preferably forms an image (IM) with a numerical aperture greater than 0.18.

Abstract: According to one exemplary embodiment, a projection objective is provided and includes at least two non-planar (curved) mirrors, wherein an axial distance between a next to last non-planar mirror and a last non-planar mirror, as defined along a light path, is greater than an axial distance between the last non-planar mirror and a first refracting surface of lenses following in the light path. In one exemplary embodiment, the first refracting surface is associated with a single pass type lens. The present objectives form images with numerical apertures of at least about 0.80 or higher, e.g., 0.95. Preferably, the objective does not include folding mirrors and there is no intermediate image between the two mirrors, as well as the pupil of the objective being free of obscuration.

Abstract: A projection objective provides a light path for a light bundle from an object field in an object plane to an image field in an image plane. The projection objective includes eight mirrors. The light path is provided via the eight mirrors, and is free of obscuration.

Abstract: There is provided a microlithographic projector lens for EUV-lithography with a wavelegth in a range of 10–30 nm, an incident aperture diaphragm and an emergent aperture diaphragm for the transformation of an object field in an object plane into an image field in an image plane. The invention has a microlithographic projector lens that includes a first, second, third, fourth, fifth, sixth, seventh and eighth mirror, and a beam path from the object plane to the image plane that is free from obscuration.

Abstract: An EUV optical projection system includes at least six mirrors (M1, M2, M3, M4, M5, M6) for imaging an object (OB) to an image (IM). At least one mirror pair is preferably configured as an at least phase compensating mirror pair. The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a second mirror (M2) and a third mirror (M3), such that a first mirror (M1) and the second mirror (M2) form a first optical group (G1) and the third mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G1). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the first mirror (M1) and the second mirror (M2). The second mirror (M2) is preferably convex, and the third mirror (M3) is preferably concave. The system preferably forms an image (IM) with a numerical aperture greater than 0.18.

Abstract: In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.