Abstract: An objective in a microlithographic projection exposure apparatus has a first optical element that has polarization dependent properties causing intensity fluctuations in an image plane of the objective. These fluctuations may be produced by a second optical element that is arranged downstream of the first optical element. A gray filter disposed in the beam path reduces the intensity fluctuations.

Abstract: A projection lens (10) for a microlithographic projection exposure apparatus has a first optical element, for example a birefringent lens (L2), that has polarization dependent properties causing intensity fluctuations in an image plane of the projection lens. These fluctuation may be produced by a second optical element (24), for example a polarization selective beam splitting layer (28), that is arranged downstream of the first optical element. A gray filter (32; 132; 232) disposed in the beam path reduces the intensity fluctuations.

Abstract: The invention relates to a reflective optical element and an EUV lithography appliance containing one such element, said appliance displaying a low propensity to contamination. According to the invention, the reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract: An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M2) and a tertiary mirror (M3), such that a primary mirror (M1) and the secondary mirror (M2) form a first optical group (G1) and the tertiary mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G2). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M1) and the secondary mirror (M2). The secondary mirror (M2) is preferably concave, and the tertiary mirror (M3) is preferably convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15°.

Abstract: An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M2) and a tertiary mirror (M3), such that a primary mirror (M1) and the secondary mirror (M2) form a first optical group (G1) and the tertiary mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G2). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M1) and the secondary mirror (M2). The secondary mirror (M2) is preferably concave, and the tertiary mirror (M3) is preferably convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15°.

Abstract: A projection lens for a EUV microlithographic projection exposure apparatus comprises a diaphragm (BL) which is arranged at a distance (D) in front of a mirror (S2) of the lens. The diaphragm (BL) has a non-round aperture with an edge contour that may be configured such two rays of a light bundle disposed symmetrically with respect to a chief ray are treated equally, i.e. either both rays pass through the diaphragm aperture or both are blocked by the diaphragm.

Abstract: There is provided a reflective X-ray microscope for examining an object in an object plane. The reflective X-ray microscope includes (a) a first subsystem, having a first mirror and a second mirror, disposed in a beam path from the object plane to the image plane, and (b) a second subsystem, having a third mirror, situated downstream of the first subsystem in the beam path. The object is illuminated with radiation having a wavelength <100 nm, and the reflective X-ray microscope projects the object with magnification into an image plane.

Abstract: An objective is configured with a first partial objective and a second partial objective. The first partial objective, which projects a first field plane onto an intermediate image, has a first, convex mirror and a second, concave mirror. The second partial objective, which projects the intermediate image onto a second field plane, has a third and a fourth mirror, both concave. All of the four mirrors have central mirror apertures. The axial distance between the first and second mirrors is in a ratio between 0.95 and 1.05 relative to the distance between the second mirror and the intermediate image. The axial distance ZM3-IM between the third mirror and the second field plane conforms to the relationship 0.03 · Du M3 + 5.0 ? ? ? mm < Z M3 - IM < 0.25 · Du M3 tan ? ( arcsin ? ( NA ) ) . NA represents the numerical aperture NA in the second field plane, and DUM3 represents the diameter of the third mirror.

Abstract: An objective is configured with a first partial objective and a second partial objective. The first partial objective, which projects a first field plane onto an intermediate image, has a first, convex mirror and a second, concave mirror. The second partial objective, which projects the intermediate image onto a second field plane, has a third and a fourth mirror, both concave. All of the four mirrors have central mirror apertures. The axial distance between the first and second mirrors is in a ratio between 0.95 and 1.05 relative to the distance between the second mirror and the intermediate image. The axial distance ZM3-IM between the third mirror and the second field plane conforms to the relationship 0.03 · Du M3 + 5.0 ? ? ? mm < Z M3 - IM < 0.25 · Du M3 tan ? ( arcsin ? ( NA ) ) . NA represents the numerical aperture NA in the second field plane, and DuM3 represents the diameter of the third mirror.

Abstract: There is provided a microlithography projection objective for short wavelengths, with an entrance pupil and an exit pupil for imaging an object field in an image field, which represents a segment of a ring field, in which the segment has an axis of symmetry and an extension perpendicular to the axis of symmetry and the extension is at least 20 mm. The objective comprises a first (S1), a second (S2), a third (S3), a fourth (S4), a fifth (S5) and a sixth mirror (S6) in centered arrangement relative to an optical axis. Each of these mirrors have an off-axis segment, in which the light beams traveling through the projection objective impinge. The diameter of the off-axis segment of the first, second, third, fourth, fifth and sixth mirrors as a function of the numerical aperture NA of the objective at the exit pupil is ?1200 mm * NA.

Abstract: According to one exemplary embodiment, a projection objective is provided and includes at least two non-planar (curved) mirrors, wherein an axial distance between a next to last non-planar mirror and a last non-planar mirror, as defined along a light path, is greater than an axial distance between the last non-planar mirror and a first refracting surface of lenses following in the light path. In one exemplary embodiment, the first refracting surface is associated with a single pass type lens. The present objectives form images with numerical apertures of at least about 0.80 or higher, e.g., 0.95. Preferably, the objective does not include folding mirrors and there is no intermediate image between the two mirrors, as well as the pupil of the objective being free of obscuration.

Abstract: A projection lens (10) for a microlithographic projection exposure apparatus has a first optical element, for example a birefringent lens (L2), that has polarization dependent properties causing intensity fluctuations in an image plane of the projection lens. These fluctuation may be produced by a second optical element (24), for example a polarization selective beam splitting layer (28), that is arranged downstream of the first optical element. A gray filter (32; 132; 232) disposed in the beam path reduces the intensity fluctuations.

Abstract: For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens.

Abstract: An objective is configured with a first partial objective and a second partial objective. The first partial objective, which projects a first field plane onto an intermediate image, has a first, convex mirror and a second, concave mirror. The second partial objective, which projects the intermediate image onto a second field plane, has a third and a fourth mirror, both concave. All of the four mirrors have central mirror apertures. The axial distance between the first and second mirrors is in a ratio between 0.95 and 1.05 relative to the distance between the second mirror and the intermediate image. The axial distance ZM3-IM between the third mirror and the second field plane conforms to the relationship 1 0.03 · Du M3 + 5.0 ⁢   ⁢ mm < Z M3 - IM < 0.25 · Du M3 tan ⁡ ( arcsin ⁡ ( NA ) ) .

Abstract: An EUV optical projection system includes at least six mirrors (M1, M2, M3, M4, M5, M6) for imaging an object (OB) to an image (IM). At least one mirror pair is preferably configured as an at least phase compensating mirror pair. The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a second mirror (M2) and a third mirror (M3), such that a first mirror (M1) and the second mirror (M2) form a first optical group (G1) and the third mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G1). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the first mirror (M1) and the second mirror (M2). The second mirror (M2) is preferably convex, and the third mirror (M3) is preferably concave. The system preferably forms an image (IM) with a numerical aperture greater than 0.18.

Abstract: A projection objective provides a light path for a light bundle from an object field in an object plane to an image field in an image plane. The projection objective comprises a first mirror (S1), a second mirror (S2), a third mirror (S3), a fourth mirror (S4), a fifth mirror (S5), a sixth mirror (S6), a seventh mirror (S7), and an eighth mirror (S8). The light path is provided via the eight mirrors, the light bundle includes light with a wavelength in the range of 10-30 nm, and the light path is free of shading.

Abstract: Projection System for EUV Lithography An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M2) and a tertiary mirror (M3), such that a primary mirror (M1) and the secondary mirror (M2) form a first optical group (G1) and the tertiary mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G2). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M1) and the secondary mirror (M2). The secondary mirror (M2) is preferably concave, and the tertiary mirror (M3) is preferably convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15°.

Abstract: There is provided a microlithographic projector lens for EUV-lithography with a wavelegth in a range of 10-30 nm, an incident aperture diaphragm and an emergent aperture diaphragm for the transformation of an object field in an object plane into an image field in an image plane. The invention has a microlithographic projector lens that includes a first, second, third, fourth, fifth, sixth, seventh and eighth mirror, and a beam path from the object plane to the image plane that is free from obscuration.

Abstract: A reduction objective, a projection exposure apparatus with a reduction objective, and a method of use thereof are disclosed. The reduction objective has a first set of multilayer mirrors in centered arrangement with respect to a first optical axis, a second set of multilayer mirrors in centered arrangement with respect to a second optical axis, and an additional mirror disposed at grazing incidence, such that said additional mirror defines an angle between the first optical axis and said second optical axis. The reduction objective has an imaging reduction scale of approximately 4× for use in soft X-ray, i.e.

Abstract: A projection objective provides a light path for a light bundle from an object field in an object plane to an image field in an image plane. The projection objective comprises a first mirror (S1), a second mirror (S2), a third mirror (S3), a fourth mirror (S4), a fifth mirror (S5), a sixth mirror (S6), a seventh mirror (S7), and an eighth mirror (S8). The light path is provided via the eight mirrors, the light bundle includes light with a wavelength in the range of 10-30 nm, and the light path is free of shading.