Abstract: Provided are a package structure having stacked semiconductor dies with wavy sidewalls and a method of forming the same. The package structure includes: a first die and a second die bonded together; a first encapsulant laterally encapsulating the first die; and a second encapsulant laterally encapsulating the second die, wherein a second interface of the second die in contact with the second encapsulant is a wavy interface in a cross-sectional plane.

Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.

Abstract: Disclosed is a method and system for grid connection management of renewable energy generation, the method comprises: obtaining operating condition data of a first power supply, a second power supply, a power grid, and a load in a preset period; establishing a first optimal control model according to the first condition data, and establishing a second optimal control model; monitoring grid connection management status of the first optimal control model and the second optimal control model; analyzing stability when the first optimal control model is switched to the second optimal control model. The beneficial effects of this disclosure are: completing the switch from the first optimal control model to the second optimal control model in the renewable energy generation grid connection management, which improves the smoothness of control model switching under different load conditions in the renewable energy generation process.

Abstract: A charging circuitry includes a power electronic converter, a current sensor, a voltage boost/buck controller and a charging mode controller. The power electronic converter is configured to charge or discharge a supercapacitor according to a control command. The current sensor is coupled to the supercapacitor for detecting a first sensed voltage and a second sensed voltage. The voltage boost/buck controller is configured to generate the control command and a current command according to the first and second sensed voltages and an overall feedback. The charging mode controller is configured to generate a current feedback and a voltage feedback to the voltage boost/buck controller according to a driving voltage, the current command and a third sensed voltage of the supercapacitor. The third sensed voltage, the current feedback and the voltage feedback are superposed as the overall feedback and then inputted to the same input terminal of the voltage boost/buck converter.

Abstract: Provided herein are systems and methods for enhancement of polyphenols, such as chlorogenic acids, chicoric acid, anthocyanins, and water-soluble quercetin derivatives, production in red lettuces. Also provided are transgenic lettuce for the production of polyphenols. Also provided are parts of such transgenic lettuces, such as seeds leaves, and extracts. The disclosure also provides methods of using the new lettuces and parts thereof for protection against viral/bacterial infection (i.e., by inhibiting activities of COVID-19 virus/enzymes) diabetes, cardiovascular diseases, memory and eyesight loss, inflammation, and cancer.

Abstract: Provided is a light-emitting panel comprising a substrate, a plurality of light-emitting device, and a reflection sheet, wherein the plurality of light-emitting devices and the reflection sheet are disposed on the same side of the substrate, the reflection sheet comprises a plurality of first through-holes, which are in one-to-one correspondence with the plurality of light-emitting devices, and the reflection sheet at an edge of the plurality of first through-holes is configured to wrap around an edge of the plurality of light-emitting device, and a gap between an edge of the plurality of first through-holes and an edge adjacent to the plurality of light-emitting devices is less than 0.1 mm, so that a distance between the edge of the plurality of first through holes and the edge of the plurality of light-emitting devices is reduced, and the size and width of the windowed area are reduced.

Abstract: An implantable micro-biosensor a substrate, a first electrode, a second electrode, a third electrode, and a chemical reagent layer. The first electrode is disposed on the substrate and used as a counter electrode. The second electrode is disposed on the substrate and spaced apart from the first electrode. The third electrode is disposed on the substrate and used as a working electrode. The chemical reagent layer at least covers a sensing section of the third electrode so as to permit the third electrode to selectively cooperate with the first electrode or the first and second electrodes to measure a physiological signal in response to the physiological parameter of the analyte.

Abstract: Provided is a system for detecting an anomaly in a multivariate time series that includes at least one processor programmed or configured to receive a dataset of a plurality of data instances, wherein each data instance comprises a time series of data points, determine a set of target data instances based on the dataset, determine a set of historical data instances based on the dataset, generate, based on the set of target data instances, a true value matrix, a true frequency matrix, and a true correlation matrix, generate a forecast value matrix, a forecast frequency matrix, and a forecast correlation matrix based on the set of target data instances and the set of historical data instances, determine an amount of forecasting error, and determine whether the amount of forecasting error corresponds to an anomalous event associated with the dataset of data instances. Methods and computer program products are also provided.

Abstract: A method of selecting a group of multimode optical fibers, includes comparing a first effective modal bandwidth at a first wavelength of a multimode optical fiber with a first effective modal bandwidth threshold at the first wavelength, the multimode optical fiber being in a group of multimode optical fibers meeting a first OM standard, wherein the first wavelength is from 844 nm to 863 nm; and categorizing the multimode optical fiber as passing a transmission distance requirement if the first effective modal bandwidth of the first multimode optical fiber is greater than or equal to the first effective modal bandwidth threshold; wherein the transmission distance is defined in a transceiver specification, wherein the transceiver specification is one or more of: (a) an 800G bidirectional (BiDi) transceiver specification, or (b) a 100G/lane based MM VCSEL transceiver specification, or (c) a 25Gbaud based transceiver specification, or (d) 50G PAM4 based transceiver specification.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a plurality of semiconductor layers having a first group of semiconductor layers, a second group of semiconductor layers disposed over and aligned with the first group of semiconductor layers, and a third group of semiconductor layers disposed over and aligned with the second group of semiconductor layers. The structure further includes a first source/drain epitaxial feature in contact with a first number of semiconductor layers of the first group of semiconductor layers and a second source/drain epitaxial feature in contact with a second number of semiconductor layers of the third group of semiconductor layers. The first number of semiconductor layers of the first group of semiconductor layers is different from the second number of semiconductor layers of the third group of semiconductor layers.

Abstract: Embodiments of the present disclosure relates to a semiconductor device structure. The structure includes a source/drain epitaxial feature disposed over a substrate, a first interlayer dielectric (ILD) disposed over the source/drain epitaxial feature, a second ILD disposed over the first ILD. The second ILD includes a first dopant species having an atomic radius equal to or greater than silicon and a second dopant species having an atomic mass less than 15. The structure also includes a first conductive feature disposed in the second ILD, and a second conductive feature disposed over the source/drain epitaxial feature, the second conductive feature extending through the first ILD and in contact with the first conductive feature.

Abstract: Semiconductor devices and methods are provided. A semiconductor device according to the present disclosure includes a first transistor having a first gate dielectric layer, a second transistor having a second gate dielectric layer, and a third transistor having a third gate dielectric layer. The first gate dielectric layer includes a first concentration of a dipole layer material, the second gate dielectric layer includes a second concentration of the dipole layer material, and the third gate dielectric layer includes a third concentration of the dipole layer material. The dipole layer material includes lanthanum oxide, aluminum oxide, or yittrium oxide. The first concentration is greater than the second concentration and the second concentration is greater than the third concentration.

Abstract: A semiconductor device includes channel members vertically stacked, a gate structure wrapping around the channel members, a gate spacer disposed on sidewalls of the gate structure, an epitaxial feature abutting the channel members, and an inner spacer layer interposing the gate structure and the epitaxial feature. In a top view of the semiconductor device, the inner spacer layer has side portions in physical contact with the gate spacer and a middle portion stacked between the side portions. In a lengthwise direction of the channel members, the middle portion of the inner spacer layer is thicker than the side portions of the inner spacer layer.

Abstract: A pixel detection device includes a data line, a pixel circuit, and a detection circuit. Pixel circuit is coupled to a system high voltage source, a system low voltage source, and a first reference voltage source. Detection circuit is coupled to data line and pixel circuit, and is configured to receive a driving signal and a detection control signal. Detection circuit forms a first detection loop with the system low voltage source and the data line so as to detect whether the pixel circuit is abnormal according to the driving signal and the detection control signal in a first stage. Detection circuit forms a second detection loop with the first reference voltage source, the system low voltage source, the pixel circuit, and the data line so as to detect whether the pixel circuit is abnormal according to the driving signal and the detection control signal in a second stage.

Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Abstract: An implantable micro-biosensor a substrate, a first electrode, a second electrode, a third electrode, and a chemical reagent layer. The first electrode is disposed on the substrate and used as a counter electrode. The second electrode is disposed on the substrate and spaced apart from the first electrode. The third electrode is disposed on the substrate and used as a working electrode. The chemical reagent layer at least covers a sensing section of the third electrode so as to permit the third electrode to selectively cooperate with the first electrode or the first and second electrodes to measure a physiological signal in response to the physiological parameter of the analyte.

Abstract: A route recommendation method, an electronic device, and a storage medium are provided, which relate to the field of data processing and especially relate to the field of intelligent recommendation. The method includes: receiving a route recommendation request, wherein the route recommendation request comprises N-dimension itinerary label information; selecting M theme routes from a theme route library according to the N-dimension itinerary label information; determining a recommended route from the M theme routes, wherein the selecting the M theme routes from the theme route library according to the N-dimension itinerary label information, comprises: selecting at least one theme route from the theme route library according to i-th-dimension itinerary label information in the N-dimension itinerary label information and theme information of respective theme routes in the theme route library.

Abstract: Disclosed are a control information sending method and detecting method, a base station, a terminal, and a computer storage medium. The method includes: a base station determining first-type physical layer control information, which is used for indicating a first-type control parameter of a second-type physical layer control channel; determining second-type physical layer control information, which is used for indicating a second-type control parameter of a data channel; sending the first-type physical layer control information; and sending the second-type physical layer control information on the second-type physical layer control channel.

Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a base structure. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching the channel structures. The semiconductor device structure further includes a gate stack wrapped around each of the channel structures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. In addition, the semiconductor device structure includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Abstract: A heat dissipation system of an electronic device including a body, a plurality of heat sources disposed in the body, and at least one centrifugal heat dissipation fan disposed in the body is provided. The centrifugal heat dissipation fan includes a housing and an impeller disposed in the housing on an axis. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions, and the plurality of outlets respectively correspond to the plurality of heat sources.