Abstract: This disclosure provides systems, methods, and devices for wireless communication that support configured reception with sidelink control information (SCI) repetition over a sidelink. In aspects, a receiving user equipment (UE) may be configured to conduct combined reception/decoding of SCI repetitions (received from a transmitting UE over a sidelink) over multiple time-frequency slots at pre-defined occasions (e.g., occasions configured by a base station) to decode a sidelink transmission. In aspects, a receiving UE may receive from a transmitting UE over a sidelink, a sidelink transmission during a reception occasion that includes a plurality of reception opportunities for the receiving UE. Each reception opportunity of the plurality of reception opportunities includes a repetition of an SCI. The receiving UE decodes the SCI by combining the repetitions of the SCI received in one or more reception opportunities, and decodes a data transmission (e.g.

Abstract: Provided is a method for synthesizing a chiral amine compound. A transaminase is used to transaminate a ketone substrate under the action of an amino donor, to obtain the chiral amine compound; and the conserved amino acid sequence region of the transaminase at least includes a region 1 (MAGLWCVN) and a region 2 (YNTFFKT). With the transaminase with the specific conserved amino acid sequence region to synthesize a large sterically hindered chiral amine, the enzyme catalytic reaction volume is small, the synthesizing route is short, the product yield is high, a high-cost noble metal is not required for catalysis under the synthesizing conditions, three wastes are reduced, and the production cost is saved.

Abstract: A delivery guidewire (100), comprising: a core wire (110) comprising a first segment (111), a second segment (112) and a third segment (113), which are arranged in sequence and have diameters decreasing in the direction from a distal end to a proximal end of the delivery guidewire (100); a metal ring (130) at least partially disposed at a proximal end of the first segment (111); and a spring (120) at least partially disposed over the outer side of the second segment (112). A distal end of the spring (120) abuts against a proximal end of the metal ring (130), and a distal section of the spring (120) has a diameter smaller than a diameter of a proximal section thereof. The diameter of the distal section of the spring (120) that is smaller than the diameter of the proximal section of the spring (120) results in a smaller clearance between the distal section of the spring (120) and the core wire (110), which enables greater concentricity of the distal section of the spring (120) with the core wire (110).

Abstract: A method of forming a semiconductor structure includes the following operations. A semiconductor epitaxial layer is formed on a first semiconductor substrate. A first side of the semiconductor epitaxial layer is adhered to a transfer substrate by an adhesive layer covering the first side of the semiconductor epitaxial layer. The semiconductor epitaxial layer and the first semiconductor substrate are turned over by the transfer substrate. The first semiconductor substrate is removed to expose a second side of the semiconductor epitaxial layer opposite to the first side. A first semiconductor doped region is formed on the second side of the semiconductor epitaxial layer. After the first semiconductor doped region is formed, the adhesive layer and the transfer substrate are removed.

Abstract: A staining kit is provided, including a first pattern including antibodies against T cell, B cell, NK cell, monocyte, regulatory cell, CD8, CD45, and CTLA4; a second pattern including antibodies against T cell, B cell, NK cell, monocyte, regulatory cell, dendritic cell, and CD45; a third pattern including antibodies against T cell, B cell, NK cell, monocyte, CD8, CD45, CD45RA, CD62L, CD197, CX3CR1 and TCR??; and a fourth pattern including antibodies against B cell, CD23, CD38, CD40, CD45 and IgM, wherein the antibodies of each pattern are labeled with fluorescent dyes. A method of identifying characterized immune cell subsets of a disease and a method of predicting the likelihood of NPC in a subject in the need thereof using the staining kit are also provided.

Abstract: A deep neural network-based method for detecting living cell morphology may include identifying and locating one or more living cells within an acquired image to be detected by using a deep neural network-based target detection model, so as to extract one or more living single cell images. segmenting the image of the one or more living single cells by using a deep neural network-based cell segmentation model, so as to obtain one or more feature part of the one or more living single cells. and analyzing and determining a morphological parameter of the one or more living single cells based on the one or more feature parts. Thus, the activity of the detected cells can be ensured, and a non-destructive, accurate, and rapid detection of living cell morphology can be achieved.

Abstract: Methods, systems, and devices for wireless communications are described. A first user equipment (UE) may receive a message indicating geographic location information related to beamforming an air-to-air sidelink message via a sidelink channel. In some examples, a second UE may transmit the message or different as a message scheduling the sidelink message. The geographic directions to avoid when beamforming the sidelink message, or a combination thereof. The first UE may identify one or more precoding parameters based on the geographic location information. The first UE may transmit the air-to-air sidelink message to the second UE. The sidelink message may be precoded for transmission via a transmission beam using the one or more precoding parameters.

Abstract: Methods, systems, and devices for wireless communications are described. In some systems, a wireless device may In use non-uniformly distributed bits for amplitude mapping and uniformly distributed bits for sign mapping to support probabilistic constellation shaping (PCS) for transmission of a message. To provide a coding gain with one or more retransmissions of the message, the device may configure redundancy versions based on the non-uniform distribution of one or more symbols. In some examples, the device may include the same set of non-uniformly distributed systematic bits or at least a portion of non-uniformly distributed systematic bits in each redundancy version of the message. Additionally or alternatively, the device may use multiple modulation and coding scheme (MCS) values to modulate one or more of the redundancy versions, where a first MCS value is used to modulate non-uniformly distributed symbols and a second MCS value is used to modulate uniformly distributed symbols.

Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.

Abstract: The present disclosure is directed to techniques of zone-based target control in chemical mechanical polishing of wafers. Multiple zones are identified on a surface of a wafer. The CMP target is achieved on each zone in a sequence of CMP processes. Each CMP process in the sequence achieves the CMP target for only one zone, using a CMP process selective to other zones.

Abstract: Methods, systems, and devices for wireless communications are described. Generally, the described techniques provide for a user equipment (UE) to transmit feedback information via a configurable quantity of interlaced resource blocks (IRBs) in one or more interlaces of a sidelink feedback channel. For example, the UE may transmit feedback via multiple IRBs of an interlace. The UE may determine which IRBs to use in accordance with a configuration, which may indicate a quantity of IRBs, a distribution of the IRBs, a pattern of the IRBs, or any combination thereof. Additionally, or alternatively, the UE may determine to transmit feedback via multiple IRBs of an interlace that is different from a common interlace.

Abstract: The present disclosure provides solutions to sidelink transmission/reception problems by preparing waveforms for multiple resource blocks (RBs) in a given bandwidth. Upon determining the availability of RBs or sets of RBs the apparatuses and methods of the present disclosure allow for dynamic determination and use of available sidelink frequencies. An apparatus may comprise a memory and at least one processor coupled to the memory and configured to transmit and/or receive sidelink data in at least one contiguous set of RBs within a bandwidth part (BWP) of an unlicensed frequency band, the BWP including a plurality of RB sets, wherein the SL data is transmitted and/or received in a waveform generated for at least one of the plurality of RB sets prior to a listen-before-talk procedure indicating an availability of the at least one contiguous set of RBs for transmission.

Abstract: Methods, systems, and devices for wireless communications are described. A first user equipment (UE) may receive an inter-UE coordination request message from a second UE, the inter-UE coordination request message identifying a request for resource scheduling information for the first UE, the second UE, or both. The first UE may transmit an inter-UE coordination response message comprising the scheduling information to the second UE, the scheduling information comprising an indication of one or more of a resource block set and interlacing pattern frequency configuration for multi-slot burst communications between the first UE and the second UE or a starting slot and slot burst length configuration for the multi-slot burst communications between the first UE and the second UE.

Abstract: A device for removing unwanted objects from cut tobacco in a cut tobacco production line is disclosed, which includes: a raw cut tobacco feeding and conveying unit (N1), a heavy unwanted object removal unit (N2), a cut tobacco dispersion and recovery unit (N3), a moderate unwanted object removal unit (N4), a cut tobacco humidification unit (N5) and a light unwanted object removal unit (N6). An unwanted object removal method using the cut tobacco unwanted object removal device is also disclosed. The device and method of the disclosure can effectively remove unwanted objects from cut tobacco.

Abstract: Provided is a focusing assembly including a focusing barrel and a barrel retaining ring; the focusing barrel includes a first sleeve, a second sleeve, and a third sleeve that are sequentially sleeved from inside to outside of the focusing barrel; the first sleeve is provided with a lens mounting portion for mounting a focusing lens, a first end of the second sleeve is provided with a display screen mounting portion for mounting a display screen, a second end of the second sleeve is detachably connected to the barrel retaining ring, the first end and the second end being opposite ends of the second sleeve; and the lens mounting portion and the display screen mounting portion are configured such that the relative position thereof in a focusing direction of the focusing assembly is adjustable.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive a configuration that indicates multiple time intervals corresponding to multiple physical sidelink shared channels (PSSCHs) within a slot, wherein at least one PSSCH, of the multiple PSSCHs, starts in a symbol other than an initial data symbol of the slot. The UE may communicate in one or more PSSCHs, of the multiple PSSCHs, within the slot based at least in part on the configuration. Numerous other aspects are described.

Abstract: A display substrate and a display apparatus are provided. The display substrate includes: a base substrate; a plurality of sub-pixels arranged on the base substrate, wherein the sub-pixels each include a sub-pixel driving circuit; a plurality of fingerprint recognition structures arranged on the base substrate, wherein the fingerprint recognition structures each include a control circuit and a fingerprint recognition electrode, the fingerprint recognition electrode is located on a side of the control circuit facing away from the base substrate, the control circuit is coupled to the fingerprint recognition electrode, and the control circuit is used for outputting a sensing signal from the fingerprint recognition electrode; wherein the control circuit and the sub-pixel driving circuit are arranged in a direction parallel to the base substrate.

Abstract: A storage system determines a change in storage system geometry that affects at least one previously formed resiliency group of storage system resources. The storage system forms at least one resiliency group of storage system resources in accordance with rules that emphasize stability of formation of resiliency groups. The storage system accesses data stripes across storage system resources of resiliency groups.

Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.