Abstract: In cancers such as prostate cancer, the combination of PTEN loss and activation of Myc activates an adaptive stress response that enables tumor cells to escape the stress of massively upregulated protein synthesis. This pro-survival response is mediated by the PERK-phosphorylated eIF2? axis of the UPR adaptive response. Agents that disrupt PERK-eIF2? pathways disrupt the adaptive response and lead to cancer cell death from uncontrolled growth. For example, ISRIB and derivatives may be employed as therapeutic agents to disrupt PERK-mediated adaptive mechanisms. Additionally PTEN loss and activation of Myc provides a diagnostic marker that enables better prognosis and the selection of amenable treatments.

Abstract: In cancers such as prostate cancer, the combination of PTEN loss and activation of Myc activates an adaptive stress response that enables tumor cells to escape the stress of massively upregulated protein synthesis. This pro-survival response is mediated by the PERK-phosphorylated eIF2? axis of the UPR adaptive response. Agents that disrupt PERK-eIF2? pathways disrupt the adaptive response and lead to cancer cell death from uncontrolled growth. For example, ISRIB and derivatives may be employed as therapeutic agents to disrupt PERK-mediated adaptive mechanisms. Additionally PTEN loss and activation of Myc provides a diagnostic marker that enables better prognosis and the selection of amenable treatments.

Abstract: A method and apparatus for collecting and evaluating biometric data of members of a group uses a mobile ad hoc network to relay information collected from each group member to a monitoring device. The information is collected from each group member using a chin strap biometric sensing device. The monitoring device is an endpoint of the mobile ad hoc network, and organizes the collected data for evaluation and display to a supervisor of the group. Any biometric parameter for a given group member that exceeds a preferred value can be flagged for immediate attention by the supervisor.

Abstract: A sense amplifier for a memory circuit that can sense into the deep negative voltage threshold region is described. A selected memory cell is sensed by discharging a source line through the memory cell into the bit line and sense amplifier. While discharging the source line through the memory cell into the sense amplifier, a voltage level on the discharge path is used to set the conductivity of a discharge transistor to a level corresponding to the conductivity of the selected memory cell. A sense node is then discharged through the discharge transistor. By allowing the sense amplifier to bias a memory cell being sensed to a selected one of multiple bias levels during a sensing operation, multiple target data states can be concurrently program verified, leading to higher performance when writing data.

Abstract: A sense amplifier for a memory circuit that can sense into the deep negative voltage threshold region is described. A selected memory cell is sensed by discharging a source line through the memory cell into the bit line and sense amplifier. While discharging the source line through the memory cell into the sense amplifier, a voltage level on the discharge path is used to set the conductivity of a discharge transistor to a level corresponding to the conductivity of the selected memory cell. A sense node is then discharged through the discharge transistor. To reduce noise, a decoupling capacitor is connected to the control gate of the discharge transistor and an auxiliary keeper current is run through the discharge transistor.

Abstract: Apparatuses, systems, and methods are disclosed for current sensing for non-volatile memory. A current to voltage conversion circuit may convert a current coupled to a sense amplifier to an analog voltage at a sense node. A voltage to digital conversion circuit may convert an analog voltage at a sense node to a digital signal, based on a voltage difference between the sense node and a comparison node during a strobe time. A bias circuit may bias a comparison node to a bias voltage other than a reference voltage, at least during a strobe time.

Abstract: A sense amplifier for a memory circuit that can sense into the deep negative voltage threshold region is described. A selected memory cell is sensed by discharging a source line through the memory cell into the bit line and sense amplifier. While discharging the source line through the memory cell into the sense amplifier, a voltage level on the discharge path is used to set the conductivity of a discharge transistor to a level corresponding to the conductivity of the selected memory cell. A sense node is then discharged through the discharge transistor. To reduce noise, a decoupling capacitor is connected to the control gate of the discharge transistor and an auxiliary keeper current is run through the discharge transistor.

Abstract: The present disclosure describes a system, a circuit, and method for process and temperature compensation in an integrated circuit. For example, the system includes a bus, a data latch, and a voltage generator. The data latch includes a plurality of transistors coupled to the bus. The voltage generator includes a tracking transistor with one or more physical characteristics that substantially match one or more respective physical characteristics—e.g., gate width and gate length dimensions—of at least one of the plurality of transistors in the data latch. The voltage generator is configured to adjust a pre-charged voltage on the bus based on an electrical characteristic of the tracking transistor.

Abstract: In a non-volatile memory formed according to a NAND-type architecture that has, on one or both ends of the NAND strings, multiple select gates including some with programmable threshold voltages, a structure and corresponding for efficiently programming of such select gates. On the drain side, the end most of multiple drain select transistors is individually controllable and used for biasing purposes while one or more other drain side select gates are collectively programmed to set adjust their threshold voltage. Independently, on the source side, the end most of multiple source select transistors is individually controllable and used for biasing purposes while other source side select gates are collectively programmed to set adjust their threshold voltage.