Abstract: A semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. The dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. The isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.

Abstract: A method of forming a semiconductor transistor device. The method comprises forming a channel structure over a substrate and forming a first source/drain structure and a second source/drain structure on opposite sides of the fin structure. The method further comprises forming a gate structure surrounding the fin structure. The method further comprises flipping and partially removing the substrate to form a back-side capping trench while leaving a lower portion of the substrate along upper sidewalls of the first source/drain structure and the second source/drain structure as a protective spacer. The method further comprises forming a back-side dielectric cap in the back-side capping trench.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first channel structure and a second channel structure over a substrate. The semiconductor device structure also includes a first gate stack over the first channel structure, and the first gate stack has a first width. The semiconductor device structure further includes a second gate stack over the second channel structure. The second gate stack has a protruding portion extending away from the second channel structures. The protruding portion of the second gate stack has a second width, and half of the first width is greater than the second width.

Abstract: A method for fabricating nonenzymatic glucose sensor, which comprises steps of: (a) providing a bottom substrate; (b) preparing a graphene layer on the bottom substrate; (c) depositing plural amount of zinc oxide (ZnO) seed crystals on the graphene layer; (d) growing the ZnO seed crystals into columnar nanorods with hydrothermal method; (e) coating a thin film of cuprous oxide (Cu2O) on the surface of the ZnO nanorods by electrochemistry-based electrodeposition; and (f) grafting single-walled carbon nanotubes (SWCNTs) on surface of the Cu2O thin film, by using Nafion fixative composited with SWCNTs. The structure of the above sensor, therefore, comprises a bottom substrate and other components orderly assembled on it, including, from inside to outside, a graphene layer, plural amount of ZnO nanorods, a Cu2O thin film, plural amount of SWCNTs, and the Nafion fixative. Accordingly, the sensor has advantages of low cost, rapid response, and easy for preservation.

Abstract: A medical device for the electromagnetic tracking of a medical instrument transported through the medical device. The medical device has a central axis and a channel that receives and transports a medical instrument through the medical device. The channel extends to a distal portion of the medical device and connects with an opening in the medical device that is not aligned with the central axis. The medical device includes a tracking component that is a plurality of coordinated electromagnetic sensors for generating a virtual axis of travel for the medical instrument, with the virtual axis passing through the opening of the device and being aligned with tool insertion axis.

Abstract: A method for generating adversarial examples for a Graph Neural Network (GNN) model. The method includes: determining vulnerable features of target nodes in a graph based on querying the GNN model, wherein the graph comprising nodes including the target nodes and edges, each of the edges connecting two of the nodes; grouping the target nodes into a plurality of clusters according to the vulnerable features of the target nodes; and obtaining the adversarial examples based on the plurality of clusters.

Abstract: This application discloses a packet transmission method and apparatus, a device, and a storage medium, and relates to the field of communication technologies. The method includes: in response to that a second slave port of a network device is invalid or the second slave port does not exist, a second master port of the network device obtains a second dataset, where the second dataset is obtained by modifying a first dataset, and the first dataset includes a timestamp carried in a first clock packet received by a first slave port and data generated by the first slave port based on the first clock packet. The network device sends a second clock packet based on the second dataset through the second master port, where a timestamp carried in the second clock packet is the timestamp carried in the first clock packet.

Abstract: A semiconductor structure includes one or more channel layers; a gate structure engaging the one or more channel layers; a first source/drain feature connected to a first side of the one or more channel layers and adjacent to the gate structure; a first dielectric cap disposed over the first source/drain feature, wherein a bottom surface of the first dielectric cap is below a top surface of the gate structure; a first via disposed under and electrically connected to the first source/drain feature; and a power rail disposed under and electrically connected to the first via.

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.

Abstract: A wheel control mechanism includes a support base, a wheel module, a first magnetic module and a second magnetic module. The wheel module, the first magnetic module and the second magnetic module are installed on the support base. The first magnetic module generates a magnetic attractive force to attract a metal ratchet of the wheel module. By adjusting the position of the second magnetic module relative to the first magnetic module, the strength of the magnetic attractive force is changed. Consequently, the rotation of the wheel module results in a tactile feel or does not result in the tactile feel.

Abstract: Semiconductor devices including air spacers formed in a backside interconnect structure and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure; and a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including a first dielectric layer on the backside of the first transistor structure; a first via extending through the first dielectric layer, the first via being electrically coupled to a first source/drain region of the first transistor structure; a first conductive line electrically coupled to the first via; and an air spacer adjacent the first conductive line, the first conductive line defining a first side boundary of the air spacer.

Abstract: A sensing device is provided. The sensing device includes a processing circuit and a multi-sensor integrated single chip. The multi-sensor integrated single chip includes a substrate and a temperature sensor, a pressure sensor, and an environmental sensor disposed on the substrate. The temperature sensor senses temperature. The pressure sensor senses pressure. The environmental sensor senses an environmental state. The processing circuit obtains a first sensed temperature value from the temperature sensor when the environmental sensor does not operate, and it obtains a second sensed temperature value from the temperature sensor when the environmental sensor operates. The processing circuit obtains a sensed pressure value from the pressure sensor. The processing circuit obtains at least one temperature calibration reference of the pressure sensor according to the first and second sensed temperature values and calibrates the sensed pressure value according to the temperature calibration reference.

Abstract: A computer-implemented method for motion compensation of medical imaging data includes estimating, via a processor, non-periodic motion of a myocardium of a heart due to respiration and/or other body movements throughout a positron emission tomography (PET) scan based on list-mode emission data acquired during the PET scan of the heart of a subject. The method also includes performing, via the processor, event-by-event motion-corrected list-mode reconstruction on the list-mode emission data to generate cardiac images with the non-periodic motion removed.

Abstract: A computer-implemented method comprising: obtaining, by way of an input, input data relating to speech provided by a user; deriving one or more hypotheses for each of a plurality of user data fields from the input data; obtaining one or more reference values for each of the plurality of user data fields for each of one or more candidate users; calculating a score for at least one candidate user of the one or more candidate users, calculating the score comprising: calculating a plurality of user data field scores comprising, for each of the plurality of user data fields, a respective user data field score using the one or more hypotheses and the one or more reference values for the candidate user for the respective user data field; performing one or more fuzzy logic operations on the plurality of user data field scores; using the score for a candidate user of the one or more candidate users to perform a verification or identification process for the user.

Abstract: A rear derailleur is provided, including: a base, configured to be mounted to a bicycle; a linkage assembly, connected to the base; a movable member, rotatably connected to the linkage assembly; a chain guide, rotatably connected to the movable member by an axle assembly; a biasing member, located between the movable member and the chain guide, positioned to the movable member and the chain guide; a resistance mechanism, connected to the movable member; and a cap member, covering the resistance mechanism and driving the resistance mechanism, rotatably positionable in either of a first position and a second position, wherein when the cap member is positioned in the first position, the resistance mechanism provides a first resistance, and when the cap member is positioned in the second position, the resistance mechanism provides a second resistance which is different from the first resistance.

Abstract: A rear derailleur is provided, including: a base, configured to be mounted to a bicycle; a linkage assembly, connected to the base; a movable member, rotatably connected to the linkage assembly; a chain guide, rotatably connected to the movable member by an axle assembly; a biasing member, located between the movable member and the chain guide, positioned to the movable member and the chain guide; a resistance mechanism, connected to the movable member; and a cap member, covering the resistance mechanism and driving the resistance mechanism, rotatably positionable in either of a first position and a second position, wherein when the cap member is positioned in the first position, the resistance mechanism provides a first resistance, and when the cap member is positioned in the second position, the resistance mechanism provides a second resistance which is different from the first resistance.

Abstract: Spun fibers and the use thereof, and a fiber spinning method. The fiber spinning method comprises extruding and spinning a spinning solution, and then sequentially subjecting a fiber precursor obtained by spinning to cooling formation, drying and stretching, wherein the method for the cooling formation comprises bringing the fiber precursor into contact with a fluid at a temperature of no more than ?10° C. Polyethylene spun fibers obtained by means of the fiber spinning method have a breaking strength of 40 CN/dtex or more and a modulus of 1400 CN/dtex or more.

Abstract: Provided is a memory device and a method of forming the same. The method includes: providing a substrate having multiple active regions; forming a first layer stack on the substrate; patterning the first layer stack to form multiple recesses in the first layer stack; forming a liner layer on the first layer stack to cover the recesses; performing an etching process to remove a portion of the liner layer and the first layer stack below the recesses, so as to extend the recesses downward to form multiple openings, wherein the openings respectively expose the active regions; respectively forming multiple conductive structures in the openings; forming a second layer stack on the conductive structures; and patterning the second layer stack and the conductive structures to form multiple bit-line structures and bit-line contacts, respectively.

Abstract: A rear derailleur is provided, including: a base, configured to be mounted to a bicycle; a movable member, movably disposed on the base; a shaft, rotatably connected to the movable member; a chain guide, connected to the shaft; a biasing member, disposed between the chain guide and the movable member; a resistance mechanism, connected to the movable member to apply frictional resistance to the shaft.

Abstract: The present invention relates to a method for depositing a horizontal rib on an unequal-height section by laser cladding, including the following steps: providing an unequal-height section and a laser cladding device, determining a deposition position on the unequal-height section, and determining a length of a rib on the unequal-height section according to the deposition position; using a lowest point of the deposition position as a first segment of the rib and a highest point as a last segment of the rib; determining a number of segments of the rib according to the length and a vertical height of each segment of the rib; determining a cladding speed of each segment of the rib according to a relationship between a cladding height of each segment of the rib and a scanning speed under a certain parameter, and carrying out laser cladding to obtain a horizontal rib.