Abstract: Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.

Abstract: A system and method for patterning metal oxide materials in a semiconductor structure. The method comprises a first step of depositing a layer of metal oxide material over a substrate. Then, a patterned mask layer is formed over the metal oxide layer leaving one or more first regions of the metal oxide layer exposed. The exposed first regions of the metal oxide layer are then subjected to an energetic particle bombardment process to thereby damage the first regions of the metal oxide layer. The exposed and damaged first regions of the metal oxide layer are then removed by a chemical etch. Advantageously, the system and method is implemented to provide high-k dielectric materials in small-scale semiconductor devices. Besides using the ion implantation damage (I/I damage) plus wet etch technique to metal oxides (including metal oxides not previously etchable by wet methods), other damage methods including lower energy, plasma-based ion bombardment, may be implemented.

Abstract: A process and apparatus for the processing of a precision surface. The process and apparatus includes contacting of a precision surface in a process chamber with liquid or supercritical carbon dioxide in which sonic waves are generated.

Abstract: A method for evaluating, monitoring or controlling the efficiency, stability or exhaustion of a complexing or chelating agent present in a chemical solution used for oxidizing, dissolving, etching or stripping a semiconductor wafer wherein:a chemical solution containing hydrogen peroxide as well as a complexing or chelating agent for contaminants present in the solution is used for oxidation, dissolution, etching or stripping a semiconductor wafer surface;a measurement of the hydrogen peroxide decomposition is performed in situ in the solution;the measurement of the H.sub.2 O.sub.2 decomposition is used to provide information concerning the behavior of the complexing or chelating agent.