Patents by Inventor Harel Frish
Harel Frish has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11217964Abstract: There is disclosed in one example a fiberoptic communication device, including: a modulator to modulate data onto a laser pulse; and a semiconductor laser source including an active optical waveguide to provide optical gain and support an optical mode, the laser source further including a V-shaped current channel superimposed on the optical waveguide, and disposed to feed the active optical waveguide with electrical current along its length, the current channel having a proximate end to the optical mode, the proximate end having a width substantially matching a diameter of the optical mode, and a removed end from the optical mode, wherein the removed end is substantially wider than the proximate end.Type: GrantFiled: December 28, 2018Date of Patent: January 4, 2022Assignee: Intel CorporationInventors: Pierre Doussiere, George A. Ghiurcan, Jonathan K. Doylend, Harel Frish
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Patent number: 11211245Abstract: A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.Type: GrantFiled: June 2, 2020Date of Patent: December 28, 2021Assignee: Intel CorporationInventors: Khaled Ahmed, Anup Pancholi, John Heck, Thomas Sounart, Harel Frish, Sansaptak Dasgupta
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Publication number: 20210375620Abstract: A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.Type: ApplicationFiled: June 2, 2020Publication date: December 2, 2021Applicant: Intel CorporationInventors: Khaled Ahmed, Anup Pancholi, John Heck, Thomas Sounart, Harel Frish, Sansaptak Dasgupta
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Patent number: 11175451Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.Type: GrantFiled: January 2, 2020Date of Patent: November 16, 2021Assignee: Intel CorporationInventors: Hasitha Jayatilleka, Harel Frish, Ranjeet Kumar, Haisheng Rong, John Heck
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Publication number: 20210318561Abstract: A method may include: forming a base layer on a substrate; forming a waveguide assembly on the base layer, where the waveguide assembly is surrounded by a cladding layer; forming a trench opening through the cladding layer and the base layer; forming an undercut void by etching the substrate through the trench opening, where the undercut void extends under the waveguide assembly and the base layer; and filling the trench opening with a filler to seal off the undercut void. Other embodiments are described and claimed.Type: ApplicationFiled: June 25, 2021Publication date: October 14, 2021Inventors: Meer Nazmus Sakib, Saeed Fathololoumi, Harel Frish, John Heck, Eddie Bononcini, Reece Defrees, Stanley J. Dobek, Aliasghar Eftekhar, Walter Garay, Lingtao Liu, Wei Qian
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Publication number: 20210311258Abstract: A structure for coupling an optical signal between an integrated circuit photonic structure and an external optical fiber is disclosed as in a method of formation. The coupling structure is sloped relative to a horizontal surface of the photonic structure such that light entering or leaving the photonic structure is substantially normal to its upper surface.Type: ApplicationFiled: June 21, 2021Publication date: October 7, 2021Inventor: Harel Frish
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Patent number: 11041990Abstract: A structure for coupling an optical signal between an integrated circuit photonic structure and an external optical fiber is disclosed as in a method of formation. The coupling structure is sloped relative to a horizontal surface of the photonic structure such that light entering or leaving the photonic structure is substantially normal to its upper surface.Type: GrantFiled: October 31, 2019Date of Patent: June 22, 2021Assignee: Micron Technology, Inc.Inventor: Harel Frish
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Patent number: 10996408Abstract: Embodiments of the present disclosure are directed toward techniques and configurations for an optical coupler including an optical waveguide to guide light to an optical fiber. In embodiments, the optical waveguide includes a tapered segment to propagate the received light to the optical fiber. In embodiments, the tapered segment is buried below a surface of a semiconductor substrate to transition the received light within the semiconductor substrate from a first optical mode to a second optical mode to reduce a loss of light during propagation of the received light from the optical waveguide to the optical fiber. In embodiments, the surface of the semiconductor substrate comprises a bottom planar surface of a silicon photonic chip that includes at least one or more of passive or active photonic components. Other embodiments may be described and/or claimed.Type: GrantFiled: July 19, 2019Date of Patent: May 4, 2021Assignee: Intel CorporationInventors: John Heck, Harel Frish, Reece DeFrees, George A. Ghiurcan, Hari Mahalingam, Pegah Seddighian
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Publication number: 20210119710Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.Type: ApplicationFiled: December 23, 2020Publication date: April 22, 2021Inventors: Meer Nazmus Sakib, Peicheng Liao, Ranjeet Kumar, Duanni Huang, Haisheng Rong, Harel Frish, John Heck, Chaoxuan Ma, Hao Li, Ganesh Balamurugan
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Patent number: 10877352Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a substrate, a waveguide disposed above the substrate, a phase change layer disposed above the waveguide, and a heater disposed above the phase change layer. The waveguide has a modifiable refractive index based at least in part on a state of a phase change material included in the phase change layer. The phase change material of the phase change layer is in a first state of a set of states, and the waveguide has a first refractive index determined based on the first state of the phase change material. The heater is to generate heat to transform the phase change material to a second state of the set of states, and the waveguide has a second refractive index determined based on the second state of the phase change material. Other embodiments may also be described and claimed.Type: GrantFiled: July 19, 2019Date of Patent: December 29, 2020Assignee: Intel CorporationInventors: John Heck, Harel Frish, Derchang Kau, Charles Dennison, Haisheng Rong, Jeffrey Driscoll, Jonathan K. Doylend, George A. Ghiurcan, Michael E. Favaro
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Publication number: 20200393619Abstract: Embodiments of the present disclosure are directed to low numerical aperture (NA) optical couplers, or spot size converters, that include a lateral taper section and/or a vertical adiabatic taper section. In embodiments, the optical couplers may be positioned on a silicon substrate proximate to V-grooves within the substrate to contain optical fibers to self-align and to couple with the optical couplers. Other embodiments may be described and/or claimed.Type: ApplicationFiled: August 27, 2020Publication date: December 17, 2020Inventors: Hari Mahalingam, Harel Frish, Sean McCargar, Joshua Keener, Shane Yerkes, John Heck, Ling Liao
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Publication number: 20200192026Abstract: Embodiments may relate to a wavelength-division multiplexing (WDM) transceiver that has a silicon waveguide layer coupled with a silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may include a tapered portion that is coupled with the silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may be coupled with a first oxide layer with a first z-height, and the silicon nitride waveguide layer may be coupled with a second oxide layer with a second z-height that is greater than the first z-height. Other embodiments may be described or claimed.Type: ApplicationFiled: February 21, 2020Publication date: June 18, 2020Applicant: Intel CorporationInventors: John Heck, Lina He, Sungbong Park, Olufemi Isiade Dosunmu, Harel Frish, Kelly Christopher Magruder, Seth M. Slavin, Wei Qian, Ansheng Liu, Nutan Gautam, Mark Isenberger
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Publication number: 20200150344Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.Type: ApplicationFiled: January 2, 2020Publication date: May 14, 2020Inventors: Hasitha Jayatilleka, Harel Frish, Ranjeet Kumar, Haisheng Rong, John Heck
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Publication number: 20200064553Abstract: A structure for coupling an optical signal between an integrated circuit photonic structure and an external optical fiber is disclosed as in a method of formation. The coupling structure is sloped relative to a horizontal surface of the photonic structure such that light entering or leaving the photonic structure is substantially normal to its upper surface.Type: ApplicationFiled: October 31, 2019Publication date: February 27, 2020Inventor: Harel Frish
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Patent number: 10564353Abstract: Some embodiments of the present disclosure describe a tapered waveguide and a method of making the tapered waveguide, wherein the tapered waveguide comprises a first and a second waveguide, wherein the first and second waveguides overlap in a waveguide overlap area. The first and second waveguides have a different size in at least one dimension perpendicular to an intended direction of propagation of electromagnetic radiation through the tapered waveguide. Across the waveguide overlap area, one of the waveguides gradually transitions or tapers into the other.Type: GrantFiled: July 16, 2018Date of Patent: February 18, 2020Assignee: Intel CorporationInventors: Yoel Chetrit, Judson D. Ryckman, Jeffrey B. Driscoll, Harel Frish, Ling Liao
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Patent number: 10473861Abstract: A structure for coupling an optical signal between an integrated circuit photonic structure and an external optical fiber is disclosed as in a method of formation. The coupling structure is sloped relative to a horizontal surface of the photonic structure such that light entering or leaving the photonic structure is substantially normal to its upper surface.Type: GrantFiled: September 21, 2018Date of Patent: November 12, 2019Assignee: Micron Technology, Inc.Inventor: Harel Frish
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Publication number: 20190339585Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a substrate, a waveguide disposed above the substrate, a phase change layer disposed above the waveguide, and a heater disposed above the phase change layer. The waveguide has a modifiable refractive index based at least in part on a state of a phase change material included in the phase change layer. The phase change material of the phase change layer is in a first state of a set of states, and the waveguide has a first refractive index determined based on the first state of the phase change material. The heater is to generate heat to transform the phase change material to a second state of the set of states, and the waveguide has a second refractive index determined based on the second state of the phase change material. Other embodiments may also be described and claimed.Type: ApplicationFiled: July 19, 2019Publication date: November 7, 2019Inventors: John Heck, Harel Frish, Derchang Kau, Charles Dennison, Haisheng Rong, Jeffrey Driscoll, Jonathan K. Doylend, George A. Ghiurcan, Michael E. Favaro
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Publication number: 20190339466Abstract: Embodiments of the present disclosure are directed toward techniques and configurations for an optical coupler including an optical waveguide to guide light to an optical fiber. In embodiments, the optical waveguide includes a tapered segment to propagate the received light to the optical fiber. In embodiments, the tapered segment is buried below a surface of a semiconductor substrate to transition the received light within the semiconductor substrate from a first optical mode to a second optical mode to reduce a loss of light during propagation of the received light from the optical waveguide to the optical fiber. In embodiments, the surface of the semiconductor substrate comprises a bottom planar surface of a silicon photonic chip that includes at least one or more of passive or active photonic components. Other embodiments may be described and/or claimed.Type: ApplicationFiled: July 19, 2019Publication date: November 7, 2019Inventors: John Heck, Harel Frish, Reece DeFrees, George A. Ghiurcan, Hari Mahalingam, Pegah Seddighian
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Publication number: 20190158209Abstract: There is disclosed in one example a fiberoptic communication circuit for wavelength division multiplexing (WDM) communication, including: an incoming waveguide to receive an incoming WDM laser pulse; an intermediate slab including a demultiplexer circuit to isolate n discrete modes from the incoming WDM laser pulse; n outgoing waveguides to receive the n discrete modes, the outgoing waveguides including fully-etched rib-to-channel waveguides; and an array of n photodetectors to detect the n discrete modes.Type: ApplicationFiled: December 28, 2018Publication date: May 23, 2019Applicant: Intel CorporationInventors: Wenhua Lin, Judson Douglas Ryckman, Ling Liao, Kelly Christopher Magruder, Harel Frish, Assia Barkai, Han-din Liu, Yimin Kang
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Publication number: 20190157837Abstract: There is disclosed in one example a fiberoptic communication device, including: a modulator to modulate data onto a laser pulse; and a semiconductor laser source including an active optical waveguide to provide optical gain and support an optical mode, the laser source further including a V-shaped current channel superimposed on the optical waveguide, and disposed to feed the active optical waveguide with electrical current along its length, the current channel having a proximate end to the optical mode, the proximate end having a width substantially matching a diameter of the optical mode, and a removed end from the optical mode, wherein the removed end is substantially wider than the proximate end.Type: ApplicationFiled: December 28, 2018Publication date: May 23, 2019Inventors: Pierre Doussiere, George A. Ghiurcan, Jonathan K. Doylend, Harel Frish