Abstract: Read operations can be performed to read data stored at a data block. Parameters reflective of a separation between a pair of programming distributions associated with the data block can be determined based on the plurality of read operations. A read request to read the data stored at the data block can be received. In response to receiving the read request, a read operation can be performed to read the data stored at the data block based on the parameters that are reflective of the separation between the pair of programming distributions associated with the data block.

Abstract: Write operations are performed to write data to user blocks of the memory device and to write, to a first set of purposed blocks, purposed data related to the first data written at the memory device. Whether the first set of purposed blocks satisfy a condition indicating an endurance state of the first set of purposed blocks is determined. Responsive to the first set of purposed blocks satisfies the condition, one or more blocks from a pool of storage area blocks of the memory device are allocated to a second set of purposed blocks.

Abstract: A processing device in a memory system receives a request to erase a data block of a memory device, determines a number of program/erase cycles performed on the data block, and performs an erase operation to erase the data block. The processing device further determines that the number of program/erase cycles performed on the data block satisfies a scan threshold condition and performs a first threshold voltage integrity scan on the data block to determine a first error rate associated with a current threshold voltage of at least one select gate device of the data block. Responsive to the first error rate associated with the current threshold voltage of the at least one select gate device satisfying an error threshold criterion, the processing device performs a touch up operation on the at least one select gate device to adjust the current threshold voltage to the target threshold voltage.

Abstract: An example apparatus for garbage collection can include a memory including a plurality of mixed mode blocks. The example apparatus can include a controller. The controller can be configured to write a first portion of sequential host data to the plurality of mixed mode blocks of the memory in a single level cell (SLC) mode. The controller can be configured to write a second portion of sequential host data to the plurality of mixed mode blocks in an XLC mode. The controller can be configured to write the second portion of sequential host data by performing a garbage collection operation. The garbage collection operation can include adding more blocks to a free block pool than a quantity of blocks that are written to in association with writing the second portion of sequential host data to the plurality of mixed mode blocks.

Abstract: A data integrity check is performed on a data block of the memory component to obtain a reliability statistic for each of a set of sampled memory cells in the data block. A distribution statistic is determined based on the reliability statistic for each of the set of sampled memory cells. A subset of the data block is identified to be relocated to another data block of the memory component based on the distribution statistic. Data of the subset of the data block is relocated to the other data block.

Abstract: A processing device in a memory system determines that data stored in a first block of a plurality of blocks of a memory component satisfies a first threshold criterion pertaining to an age of the data. Responsive to the data stored in the first block satisfying the first threshold criterion, the processing device maintains a first counter to track a number of read operations performed on the first block. The processing device further determines that the data stored in the first block does not satisfy the first threshold criterion, and in response, maintains a second counter to track a number of read operations performed on a super block comprising the plurality of blocks.

Abstract: An example apparatus for garbage collection can include a memory including a plurality of mixed mode blocks. The example apparatus can include a controller. The controller can be configured to write a first portion of sequential host data to the plurality of mixed mode blocks of the memory in a single level cell (SLC) mode. The controller can be configured to write a second portion of sequential host data to the plurality of mixed mode blocks in an XLC mode. The controller can be configured to write the second portion of sequential host data by performing a garbage collection operation. The garbage collection operation can include adding more blocks to a free block pool than a quantity of blocks that are written to in association with writing the second portion of sequential host data to the plurality of mixed mode blocks.

Abstract: An indication of an initialization of power to a memory device is received. Responsive to receiving the indication of the initialization of power to the memory device, whether a status indicator associated with a written page of the memory device can be read is determined. Responsive to determining that the status indicator cannot be read, a programming of data to the memory device did not complete based on a prior loss of power to the memory device is determined.

Abstract: A memory access operation can be determined to have failed. A determination can be made as to whether a performance of a first error control operation has remedied the failure of the memory access operation. In response to determining that the first error control operation has remedied the failure of the memory access operation, an order of a performance of one or more prioritized error control operations of the plurality of prioritized error control operations can be changed for a subsequent memory access operation that has failed based on the first error control operation that has remedied the failure.

Abstract: One or more blocks from a pool of storage area blocks of the memory component are allocated to a first set of purposed blocks. First write operations are performed to write first data to first data stripes at user blocks of the memory component. Whether the blocks in the first set of purposed blocks satisfy a condition indicating that the first set of purposed blocks are to be retired is determined. Responsive to the blocks in the first set of purposed blocks satisfying the condition, one or more other blocks from the pool of storage area blocks of the memory component are allocated to a second set of purposed blocks. Second write operations are performed to write second data to second data stripes at the user blocks of the memory component.

Abstract: A processing device in a memory system receives a first read request from a host system, wherein the first read request is directed to first data stored at a first address in a block of the memory component. The processing device determines that the first address is located within a first region of the block and increments a read counter for the block by a default amount. The processing device further receives a second read request from the host system, wherein the second read request is directed to second data stored at a second address in a block of the memory component, determines that the second address is located within a second region of the block and increments the read counter for the block by a scaled amount.

Abstract: A request to perform a write operation at a memory component can be received. A destination block of the memory component to store data of the write operation can be determined. A voltage pulse can be applied to the destination block that places a memory cell of the destination block at a voltage level associated with a high voltage state. Responsive to applying the voltage pulse to the destination block, an erase operation for the destination block can be performed to change the voltage level of the memory cell from the high voltage state to a low voltage state. A write operation can be performed to write the data to the destination block that is at the low voltage state.

Abstract: A processing device in a memory system determines that data stored in a first block of a plurality of blocks of a memory component satisfies a first threshold criterion pertaining to an age of the data. Responsive to the data stored in the first block satisfying the first threshold criterion, the processing device maintains a first counter to track a number of read operations performed on the first block. The processing device further determines that the data stored in the first block does not satisfy the first threshold criterion, and in response, maintains a second counter to track a number of read operations performed on a super block comprising the plurality of blocks.

Abstract: An indication of an initialization of power to a memory component can be received. In response to receiving the indication of the initialization, a last written page of a data block of the memory component can be identified. The last written page is associated with a status indicator. A determination is made of whether the status indicator is readable. Responsive to determining that the status indicator readable, it can be determined that programming of data to the data block of the memory component did complete and there is a data retention loss.

Abstract: A system includes a memory component and a processing device to determine an amount of data stored at a region of a memory component and determine, based on the amount of data stored in the region of the memory component. The processing device determines a frequency to perform an operation on one or more memory cells of the region of the memory component. The processing device performs the operation on the one or more memory cells at the frequency to maintain the one or more memory cells of the region of the memory component in a first state associated with a first error rate for data stored at the one or more memory cells. The first error rate is less than a second error rate associated with a second state of the one or more memory cells.

Abstract: A memory block of a non-volatile memory device is identified. The memory block has a first region and a second region, where a storage density of the first region is larger than the second region. Data is programmed at the first region of the memory block. An attribute of the memory block based on a sensor is received during programming of the data at the memory block. The attribute characterizes the data being programmed at the first region. The attribute is stored at a volatile during programming of the data at the memory block. The attribute is stored on a memory page of the second region responsive to the programming of the data at the first region being complete.

Abstract: A memory device comprising a main memory and a controller operably connected to the main memory is provided. The main memory can comprise a plurality of memory addresses, each corresponding to a single one of a plurality of word lines. Each memory address can be included in a tracked subset of the plurality of memory addresses. Each tracked subset can include memory addresses corresponding to more than one of the plurality of word lines. The controller is configured to track a number of read operations for each tracked subset, and to scan, in response to the number of read operations for a first tracked subset exceeding a first threshold value, a portion of data corresponding to each word line of the first tracked subset to determine an error count corresponding to each word line of the first tracked subset.

Abstract: A region of a memory component is determined to include a type of memory. A frequency to perform an operation on the region of the memory component is determined based on the type of memory. The operation is performed on a memory cell at the region of the memory component at the determined frequency to transition the memory cell from a state associated with an increased error rate for data stored at the memory cell to another state associated with a decreased error rate for the data stored at the memory cell.

Abstract: An indication of an initialization of power to a memory component can be received. In response to receiving the indication of the initialization, a last written page of a data block of the memory component can be identified. The last written page is associated with a status indicator. A determination is made of whether the status indicator is readable. Responsive to determining that the status indicator readable, it can be determined that programming of data to the data block of the memory component did complete and there is a data retention loss.

Abstract: A data integrity check is performed on a data block of the memory component to obtain a reliability statistic for each of a set of sampled memory cells in the data block. A distribution statistic is determined based on the reliability statistic for each of the set of sampled memory cells. A subset of the data block is identified to be relocated to another data block of the memory component based on the distribution statistic. Data of the subset of the data block is relocated to the other data block.