Abstract: Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is input. An edge of a pattern in the plurality of patterns is identified. For each pixel which is in a neighborhood of the identified edge, a calculated pixel dose is calculated such that the identified edge is relocated by the target bias. The array of pixels with the calculated pixel doses is output. Systems for performing the methods are also disclosed.

Abstract: A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

Abstract: Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is input. An edge of a pattern in the plurality of patterns is identified. For each pixel which is in a neighborhood of the identified edge, a calculated pixel dose is calculated such that the identified edge is relocated by the target bias. The array of pixels with the calculated pixel doses is output. Systems for performing the methods are also disclosed.

Abstract: A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

Abstract: In some embodiments, data is received defining a plurality of shot groups that will be delivered by a charged particle beam writer during an overall time period, where a first shot group will be delivered onto a first designated area at a first time period. A temperature of the first designated area at a different time period is determined. In some embodiments, the different time period is when secondary effects of exposure from a second shot group are received at the first designated area. In some embodiments, transient temperatures of a target designated area are determined at time periods when exposure from a shot group is received. An effective temperature of the target area is determined, using the transient temperatures and applying a compensation factor based on an amount of exposure received during that time period. A shot in the target shot group is modified based on the effective temperature.

Abstract: A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

Abstract: A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

Abstract: A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

Abstract: A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes.

Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a plurality of exposure passes are used, and where the sum of the base dosage levels for all of the exposure passes does not equal a normal dosage. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, and where the sum of the base dosage levels for all of the exposure passes is different than a normal dosage.

Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different than the union of shots from a different exposure pass. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, in which the union of shots from one of a plurality of charged particle beam exposure passes is different than the union of shots from a different exposure pass.

Abstract: In the field of semiconductor device production, a method and system for fracturing or mask data preparation or optical proximity correction are disclosed, in which a target maximum dosage for a surface is input, and where a plurality of variable shaped beam (VSB) shots is determined that will form a pattern on the surface, where at least two of the shots partially overlap, and where the plurality of shots are determined so that the maximum dosage produced on the surface is less than the target dosage. A similar method is disclosed for manufacturing an integrated circuit.

Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different than the union of shots from a different exposure pass. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, in which the union of shots from one of a plurality of charged particle beam exposure passes is different than the union of shots from a different exposure pass.

Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a plurality of exposure passes are used, and where the sum of the base dosage levels for all of the exposure passes does not equal a normal dosage. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, and where the sum of the base dosage levels for all of the exposure passes is different than a normal dosage.

Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes.

Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed. Base dosages for a plurality of exposure passes are set and a multiplicity of shots for the plurality of exposure passes is exposed. The multiplicity of shots comprises two groups: a first group of shots for at least two exposures passes, wherein the union of shots for each exposure pass covers the same area, and where shots within an exposure pass are disjoint; and a second group of shots, where each shot in the second group of shots overlaps a shot in the first group of shots. Each shot in the second group is in one of the plurality of exposure passes. A method for forming a set of patterns on a surface is also disclosed.

Abstract: A method for fracturing or mask data preparation or optical proximity correction is disclosed, wherein a plurality of variable shaped beam (VSB) shots are determined for at least one exposure pass, where the plurality of VSB shots forms a line pattern which is at a diagonal to the axes of a Cartesian coordinate plane, and where at least two neighboring shots in the same exposure pass overlap. Methods for manufacturing a surface using charged particle beam lithography and for manufacturing an integrated circuit using an optical lithography process are also disclosed.

Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes.

Abstract: A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.