Abstract: A pattern is formed by providing a reaction field in which a photo-induced reaction proceeds when a substrate is irradiated with light so as to form a pattern on the substrate, and setting, in the reaction field, conditions for establishing a nonlinear relationship between the intensity of the light and the rate of the photo-induced reaction. The substrate is selectively irradiated with light in the reaction field under the conditions set therein so as to selectively form a pattern in the irradiated portion of the substrate in accordance with the selective irradiation.

Abstract: A dry-etching method for performing anisotropic etching on a semiconductor substrate by employing an etching gas together with a film-forming gas while irradiating light or an X-ray on the semiconductor substrate. In this method at least one of the etching gas or film-forming gas is excited in a separated chamber before being introduced into an etching chamber. A dry-etching apparatus for performing the above dry-etching method is also proposed.

Abstract: A phototreating apparatus has a vacuum container for storing a solid material, a gas inlet for introducing a photoreactive gas into the container, and a light source for radiating into the container, light having a specific wavelength such that it causes a photoreaction of the photoreactive gas. The apparatus phototreats the solid material in the container by utilizing the photoreaction of the photoreactive gas. At least an inner surface of the vacuum container consists of a material which absorbs the light having the specific wavelength.

Abstract: A plurality of bar-like magnets are arranged in a vacuum chamber at an equal space interval to form a plurality of strong magnetic fields in a stripe-pattern form and the magnets are moved reciprocally in the direction of arrangement of the magnetic fields while changing gradually the stop points of the magnets over a work to be processed by etching or sputtering in a step-like manner so that the integral effect of each magnetic field acting on the work is uniform over the entire region of the work.

Abstract: An insulation layer is selectively formed by exposing the surface of a workpiece to an atmosphere comprising a mixture of a halogen-based gas and a raw gas containing a compoundable element chemically bondable with an element of a material constituting surface layer of the workpiece to form an insulating compound. The surface layer of the workpiece is formed of a non-insulating material, such as a metallic material or a semiconductor material. Light rays are directly irradiated on the selected region or regions of the surface of the workpiece through the atmosphere of the gaseous mixture, thereby dissociating said halogen-based gas. As a result, a layer comprising the insulating compound is formed on the selected region of the surface of the workpiece on which the light rays have been directly irradiated.

Abstract: A dry etching apparatus is disclosed which uses reactive gases and which is capable of achieving anisotropic etching without causing radiation damage to a workpiece to be selectively etched. The workpiece is placed in a vacuum container into which two feedstock gases are introduced. One of the gases contributes to the etching, while the other forms a film on the side wall of the etched portion of the workpiece, the film protecting it against lateral etching. A first beam which dissociates the first feedstock gas is perpendicularly directed toward the workpiece, whereas a second gas which dissociates the second feedstock gas is directed in the general direction of the workpiece.

Abstract: A dry etching apparatus using reactive ions is disclosed. A housing in which a workpiece is etched is provided with a cathode electrode on which the workpiece is mounted, and an anode electrode arranged opposite the cathode electrode. An etching gas is supplied to the housing, and pressure inside of the housing is held at a certain level. High frequency voltage is applied between the cathode and anode electrodes. A plurality of magnets are arranged outside of the housing to generate magnetic fields around the cathode electrode. The plurality of magnets are separated from one another, with a predetermined clearance being interposed therebetween, to form an endless track. The plurality of magnets are moved along the endless track, to thereby cause the magnetic fields to be moved in one direction on the cathode electrode.

Abstract: A dry etching method and device involve induction of a magnetic field having field lines perpendicular to an electric field by magnets which are arranged in the vicinity of a cathode within a reaction chamber, on the surface of the cathode being placed a sample to be etched by a plasma of an etchant gas.

Abstract: A dry etching apparatus for semiconductor wafers has a decompression vessel, the inside of which is divided by a separating wall into a discharge room and a shield room. The discharge room has a pair of elecrodes between which RF electric power is applied. One of the electrodes is placed at the separating wall and supports the wafer which is to be etched. A magnet assembly in the shield room generates a magnetic flux in the discharge room which perpendicularly intersects the electric field between the electrodes. A reactive gas is introduced into the discharge room, however, no discharge occurs, because its pressure is maintained below that required for discharge. This results in a reduced consumption of electric power, less heating, and less damage to the resist mask on the wafer.

Abstract: An ion source suitably used for an etching process among manufacturing processes for e.g. semiconductor devices, comprising a vacuum container, an anode disposed in the vacuum container, a cathode having one or more looped slits formed opposite said anode, and one or more permanent magnets located in a position or positions corresponding to a portion of the cathode surrounded by the looped slit or slits and forming a magnetic field having a direction at substantially right angles to the direction of an electric field formed by applying a voltage between the anode and cathode, a gas which is introduced into the vacuum container through an inlet means formed in the vacuum container being made into gas plasma by means of the electric and magnetic fields at right angles to each other, whereby positive ions in the gas plasma will be taken out through the looped slit or slits.

Abstract: A method of forming an insulating film of high breakdown voltage on a polycrystalline substance layer which comprises the steps of preparing the polycrystalline substance layer; selectively removing the polycrystalline substance layer; heat-treating for the first time that portion of the polycrystalline substance layer which is left after said selective removal in an oxidizing atmosphere to provide an oxide layer; removing the whole of said oxide layer; and heat-treating for the second time in an oxidizing atmosphere the polycrystalline substance layer which is now exposed due to removal of said oxide layer, thereby forming a second oxide layer acting as an insulating film on said exposed surface.