Abstract: A method for cleaning a brush includes inducing a static charge on a surface of a first plate, wherein the first plate comprises at least one of silicon nitride (SixNy) or silicon oxide (SiaOb), wherein a, b, x and y are integers. The method further includes rotating the brush in contact with the surface of the first plate.

Abstract: A brush cleaning system comprising: a plate comprising at least one of silicon nitride (SixNy) or silicon oxide (SiaOb), wherein the plate has a static charge on a surface thereof; and a machine configured to rotate a brush in contact with the static charged surface of the plate.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

Abstract: Among other things, one or more techniques or systems for particle removal from a semiconductor wafer are provided. Particles, contaminating a semiconductor wafer, have the potential to cause defects, such as scratches into a surface of the semiconductor wafer during chemical mechanical polishing or defocusing during a subsequent lithography stage, for the semiconductor wafer. Accordingly, a mechanic particle cleaner component, such as at least one of a sliver brush roller, a pencil brush, a tape polish, a sonic jet, or a liquid spray component, is configured to apply a mechanical force to an edge region of the semiconductor wafer to detach particles. A chemical particle cleaner component is configured to apply a chemical force to the edge region to detach particles. In this way, particles are removed from the semiconductor wafer before or after chemical mechanical polishing.

Abstract: Embodiments of mechanisms for performing a chemical mechanical polishing (CMP) process are provided. A method for performing a CMP process includes polishing a wafer by using a polishing pad. The method also includes applying a cleaning liquid jet on the polishing pad to condition the polishing pad. A CMP system is also provided.

Abstract: A method includes forming an etch stop layer over and contacting a gate electrode of a transistor, forming a sacrificial layer over the etch stop layer, and etching the sacrificial layer, the etch stop layer, and an inter-layer dielectric layer to form an opening. The opening is then filled with a metallic material. The sacrificial layer and excess portions of the metallic material over a top surface of the etch stop layer are removed using a removal step including a CMP process. The remaining portion of the metallic material forms a contact plug.

Abstract: A plate with a static charge on a surface is used to clean a brush. The plate uses both static charge and mechanical force to remove particles from the surface of the brush to increase the useful life of the brush.

Abstract: A method includes forming an etch stop layer over and contacting a gate electrode of a transistor, forming a sacrificial layer over the etch stop layer, and etching the sacrificial layer, the etch stop layer, and an inter-layer dielectric layer to form an opening. The opening is then filled with a metallic material. The sacrificial layer and excess portions of the metallic material over a top surface of the etch stop layer are removed using a removal step including a CMP process. The remaining portion of the metallic material forms a contact plug.

Abstract: A system and method for cleaning a surface of a semiconductor device is disclosed. An embodiment comprises buffing the first surface with a cleaning solution comprising a reactant that will remove a portion of the first surface and also change the first surface from hydrophobic to hydrophilic. The first surface may further be cleaned using a brushing process that also utilizes the cleaning solution.