Abstract: There are provided a nickel oxide film for a bolometer and a manufacturing method thereof, and an infrared detector using the nickel oxide film. The nickel oxide film has properties with a TCR value greater than ?3%/° C., a low noise value, and stable and high reproducibility properties. The nickel oxide film is applicable to manufacturing an infrared detector using a nickel oxide film for a bolometer.

Abstract: A land grid array (LGA) package including a substrate having a plurality of lands formed on a first surface of the substrate, a semiconductor chip mounted on a second surface of the substrate, a connection portion connecting the semiconductor chip and the substrate, and a support layer formed on part of a surface of a first land.

Abstract: Disclosed is a passive matrix-addressable memory apparatus. The passive matrix-addressable memory apparatus comprises: a plurality of first electrode lines horizontally arranged with respect to each other; a plurality of second electrode lines disposed orthogonal to the plurality of first electrode lines to be horizontally arranged with respect to each other; a memory unit formed between the plurality of first electrode lines and the plurality of second electrode lines, and containing an electrically polarizable material exhibiting hysteresis; and a switch unit. The switch unit comprises: first electrodes of a cantilever structure respectively formed between the memory unit and the plurality of first electrode lines to be electrically connected to the plurality of first electrode lines; and second electrodes electrically connected to the memory unit to be spaced apart from the first electrodes to face the first electrodes.

Abstract: A fabrication method of an RF MEMS switch includes forming a signal transmission line having a first signal transmission line and a second signal transmission line electrically separated from each other for transmitting a signal and forming an on/off component for turning on/off the signal transmission line. The forming the on/off component further includes forming a suspension layer, forming a piezoelectric capacitor disposed at the suspension layers, and actuated with a piezoelectric characteristic by receiving an external power, forming a contact electrode disposed at the suspension layers, and electrically separated from the piezoelectric capacitors, and forming a ground line adjacent to the signal transmission line, wherein the ground line is electrically connected to the signal transmission line by a connection line.

Abstract: There are provided a nickel oxide film for a bolometer and a manufacturing method thereof, and an infrared detector using the nickel oxide film. The nickel oxide film has properties with a TCR value greater than ?3%/° C., a low noise value, and stable and high reproducibility properties. The nickel oxide film is applicable to manufacturing an infrared detector using a nickel oxide film for a bolometer.

Abstract: Provided are an optical-infrared composite sensor and a method of fabricating the same. The optical-infrared composite sensor can sense both optical and infrared radiation. The optical-infrared composite sensor includes an infrared sensor formed on a substrate, a silicon cap enveloping the infrared sensor to vacuum-package the infrared sensor, and an optical sensor formed at one side of the silicon cap.

Abstract: An image sensing apparatus, particularly, an apparatus for optically combining visible images with far-infrared images is provided in which performing a separate signal processing may not be needed. The image combining apparatus emits light that is sensed by an image sensor, and reflects the light toward the image sensor in response to far-infrared rays being sensed from an object, thereby converting far-infrared information into information that can be sensed by the image sensor.

Abstract: Disclosed is a passive matrix-addressable memory apparatus. The passive matrix-addressable memory apparatus comprises: a plurality of first electrode lines horizontally arranged with respect to each other; a plurality of second electrode lines disposed orthogonal to the plurality of first electrode lines to be horizontally arranged with respect to each other; a memory unit formed between the plurality of first electrode lines and the plurality of second electrode lines, and containing an electrically polarizable material exhibiting hysteresis; and a switch unit. The switch unit comprises: first electrodes of a cantilever structure respectively formed between the memory unit and the plurality of first electrode lines to be electrically connected to the plurality of first electrode lines; and second electrodes electrically connected to the memory unit to be spaced apart from the first electrodes to face the first electrodes.

Abstract: The present invention relates to a SON (Silicon-On-Nothing) MOSFET having a beam structure and an inverter using thereof and the method for fabricating thereof to increase the efficiency and performance of a MOSFET. A method for fabricating the SON MOSFET according to the present invention comprises the steps of (a) patterning a passivation layer on a substrate, (b) doping boron on the substrate, (c) removing the patterned passivation layer, (d) forming the beam structure on the substrate by anisotropical etching on the region not doped with boron of the substrate, (e) depositing an insulating material on the substrate having the beam structure, and (f) deposing an electrode material on the disposed insulating material.

Abstract: A Nd:YAG laser at a wavelength of 1444 nm for removing fatty tissue is disclosed, which can directly irradiate laser light onto subcutaneous fat and efficiently remove fatty tissue with an adverse reaction on surrounding tissue minimized by using laser light at an oscillating wavelength of 1444 nm which has both a high fat absorptivity and a high water absorptivity among wavelengths that can be oscillated by the Nd:YAG laser. The Nd:YAG laser includes a flash lamp, a Nd:YAG rod, a high reflection mirror, an output coupler, a convergent lens for converging the laser light beam oscillating through the output coupler, an optical fiber for guiding the converged laser beam, and a guide needle for guiding the laser beam from the guide fiber to subcutaneous fat. Both end surfaces of the Nd:YAG rod, an inner surface of the high reflection mirror, and inner and outer surfaces of the output coupler are coated so as to oscillate only the laser beam at the wavelength of 1444 nm through the output coupler.

Abstract: Disclosed are an RF MEMS switch and a fabrication method thereof. According to an embodiment the RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate can be formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

Abstract: The present invention relates to a bolometer, and more specifically to a compensation circuit for compensating non-uniformity due to the difference of operating temperature between bolometers which exist in bolometer array using semiconductor material.

Abstract: Disclosed are an RF MEMS switch and a fabrication method thereof. According to an embodiment the RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate can be formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

Abstract: Disclosed are an RF MEMS switch and a fabrication method thereof. According to an embodiment the RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate can be formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

Abstract: Disclosed are an RF MEMS switch and a fabrication method thereof. The RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate is formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

Abstract: The present invention discloses an infrared bolometer including a signal bridge used for reading a resistance value varied by infrared heat and removing residual heat of a heat absorbing layer. The infrared bolometer includes a lower substrate having an integrated circuit coated with a protection layer, an upper substrate having an absorbing layer for absorbing infrared rays and a resistor whose resistance value is varied by the infrared heat absorbed by the absorbing layer and spaced apart from the lower substrate by a predetermined distance, a post for mechanically supporting the upper substrate and connecting the upper and lower substrate to each other, and a signal bridge arranged between the lower and upper substrates for transmitting a signal from the resistor of the upper substrate to the lower substrate.

Abstract: The present invention relates to a SON (Silicon-On-Nothing) MOSFET having a beam structure and an inverter using thereof and the method for fabricating thereof to increase the efficiency and performance of a MOSFET. A method for fabricating the SON MOSFET according to the present invention comprises the steps of (a) patterning a passivation layer on a substrate, (b) doping boron on the substrate, (c) removing the patterned passivation layer, (d) forming the beam structure on the substrate by anisotropical etching on the region not doped with boron of the substrate, (e) depositing a insulating material on the substrate having the beam structure, and (f) depositing an electrode material on the disposed insulating material.

Abstract: Disclosed herein is a low-cost low power-consumed RF power detecting device used as a core component necessary for intelligence, miniaturization and downpricing of a wireless communication system, and a fabrication method thereof. The RF power detecting device according to the present invention comprises: an upper substrate including a signal transmission line for transmitting a predetermined RF signal therethrough; a sensor section for detecting power of the RF signal transmitted through the signal transmission line; and a lower substrate for supporting the sensor section. The method of fabricating the RF power detecting device comprises the steps of: forming a sensor section for detecting power of an RF signal on a lower substrate; patterning a signal transmission line on the underside of an upper substrate; and coupling the upper substrate and the lower substrate to each other.

Abstract: Disclosed are an RF MEMS switch and a fabrication method thereof. The RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate is formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

Abstract: A method for manufacturing an infrared detector forms a p-n junction by forming a low concentration p type HgCdTe layer, forming a diffusion preventing layer for exposing some upper part of the low concentration p type HgCdTe layer, and by forming a low concentration n type HgCdTe layer by diffusing hydrogen ions and atoms to the low concentration p type HgCdTe layer using hydrogen plasma. The hydrogen ions or atoms are diffused on some of the low concentration p type HgCdTe layer to be a predetermined depth using the hydrogen plasma to form the low concentration n type HgCdTe layer in order to prevent an interface of the p-n junction from damaging, and thereby leakage current can be prevented, fabrication cost is not increased and yield is increased due to simple processes.