Abstract: A mask-frame assembly for a cathode ray tube includes a mask frame having a front portion and a side portion perpendicularly extending from the edge of the front portion and having notches, and a shadow mask having a front screen portion and a skirt portion welded to non-notched parts of the side portion of the mask frame. A portion of the skirt portion is not welded to the mask frame but exposed outside the mask frame so as to improve a thermal exchange.

Abstract: A mask-frame assembly for a cathode ray tube includes a mask frame having a front portion and a side portion perpendicularly extending from the edge of the front portion and having notches, and a shadow mask having a front screen portion and a skirt portion welded to non-notched parts of the side portion of the mask frame. A portion of the skirt portion is not welded to the mask frame but exposed outside the mask frame so as to improve a thermal exchange.

Abstract: A structure and the fabrication method of two-color IR detector are disclosed. Disclosed two-color IR detector structure is a n-p-N structure which can be realized using only two-layer HgCdTe. The most important factor in the two-color IR detector structure is the formation of the potential barrier in the conduction band of p-N heterojunction. This potential barrier prevents photogenerated minority carriers in p-HgCdTe region from diffusing to and being collected by N-HgCdTe region (larger band gap diode). The calculated potential barrier heights under the thermal equilibrium at 77 K are 21 kT (141 meV) and 13.4 kT (89 meV) for the cases of p-Hg.sub.0.78 Cd.sub.0.22 Te/N-Hg.sub.0.69 Cd.sub.0.3l Te and p-Hg.sub.0.69 Cd.sub.0.31 Te/N-Hg.sub.0.636 Cd.sub.0.364 Te with each side carrier concentration of 5.times.10.sup.15 and 1.times.10.sub.16 cm.sup.-3, respectively.