Patents by Inventor Henry C. Abbink
Henry C. Abbink has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10330696Abstract: Embodiments of the invention include an accelerometer system. The system includes an accelerometer sensor comprising first and second electrode configurations and an inertial mass between the first and second electrode configurations. In one example, the accelerometer sensor being fabricated as symmetrically arranged about each of three orthogonal mid-planes. The system also includes an accelerometer controller configured to apply control signals to each of the first and second electrode configurations to provide respective forces to maintain the inertial mass at a null position between the first and second electrode configurations. The accelerometer controller can measure a first pickoff signal and a second pickoff signal associated with the respective first and second electrode configurations. The first and second pickoff signals can be indicative of a displacement of the inertial mass relative to the null position.Type: GrantFiled: March 24, 2016Date of Patent: June 25, 2019Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Michael D. Bulatowicz, Robert C. Griffith, Henry C. Abbink, Daryl K. Sakaida, Philip R. Clark
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Patent number: 9970999Abstract: One embodiment includes a nuclear magnetic resonance (NMR) sensor system. The system includes a pump laser configured to generate an optical pump beam at a first wavelength and a probe laser configured to generate an optical probe beam at a second wavelength that is different from the first wavelength. The system also includes beam optics configured to direct the pump laser and the probe laser along orthogonal axes through a sensor cell comprising an alkali metal vapor. The system further includes detection optics that include a photodetector assembly configured to measure at least one characteristic associated with the optical probe beam leaving the sensor cell for measurement of a polarization vector of the alkali metal vapor. The detection optics can include at least one filter configured to filter light having the first wavelength and to pass light having the second wavelength to the photodetector assembly.Type: GrantFiled: May 31, 2013Date of Patent: May 15, 2018Assignee: Northrop Grumman Systems CorporationInventors: Michael S. Larsen, Henry C. Abbink, Thad G. Walker, Michael D. Bulatowicz
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Publication number: 20170276698Abstract: Embodiments of the invention include an accelerometer system. The system includes an accelerometer sensor comprising first and second electrode configurations and an inertial mass between the first and second electrode configurations. In one example, the accelerometer sensor being fabricated as symmetrically arranged about each of three orthogonal mid-planes. The system also includes an accelerometer controller configured to apply control signals to each of the first and second electrode configurations to provide respective forces to maintain the inertial mass at a null position between the first and second electrode configurations. The accelerometer controller can measure a first pickoff signal and a second pickoff signal associated with the respective first and second electrode configurations. The first and second pickoff signals can be indicative of a displacement of the inertial mass relative to the null position.Type: ApplicationFiled: March 24, 2016Publication date: September 28, 2017Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: MICHAEL D. BULATOWICZ, ROBERT C. GRIFFITH, HENRY C. ABBINK, DARYL K. SAKAIDA, PHILIP R. CLARK
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Publication number: 20130328557Abstract: One embodiment includes a nuclear magnetic resonance (NMR) sensor system. The system includes a pump laser configured to generate an optical pump beam at a first wavelength and a probe laser configured to generate an optical probe beam at a second wavelength that is different from the first wavelength. The system also includes beam optics configured to direct the pump laser and the probe laser along orthogonal axes through a sensor cell comprising an alkali metal vapor. The system further includes detection optics that include a photodetector assembly configured to measure at least one characteristic associated with the optical probe beam leaving the sensor cell for measurement of a polarization vector of the alkali metal vapor. The detection optics can include at least one filter configured to filter light having the first wavelength and to pass light having the second wavelength to the photodetector assembly.Type: ApplicationFiled: May 31, 2013Publication date: December 12, 2013Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: MICHAEL S. LARSEN, HENRY C. ABBINK, THAD G. WALKER, MICHAEL D. BULATOWICZ
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Patent number: 8579502Abstract: A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.Type: GrantFiled: July 19, 2011Date of Patent: November 12, 2013Assignee: Northrop Grumman CorporationInventors: Henry C. Abbink, Gabriel M. Kuhn, Howard Ge, Daryl Sakaida
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Publication number: 20130279144Abstract: An aspect of the present invention relates to system and method for substantially obstructing magnetic flux. One aspect of the present invention provides an apparatus for substantially obstructing at least one magnetic flux path between an ambient space and a protected volume. The apparatus includes an inner shield, substantially enclosing the protected volume. The inner shield has at least one inner shield aperture extending therethrough to allow external access to the protected volume. An outer shield substantially encloses the inner shield. The outer shield has at least one outer shield aperture extending therethrough to allow internal access from the ambient space. The apparatus is configured to impede magnetic flux between at least one inner shield aperture and at least one outer shield aperture.Type: ApplicationFiled: June 25, 2013Publication date: October 24, 2013Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: HENRY C. ABBINK, Edward Kanegsberg
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Patent number: 8552725Abstract: An aspect of the present invention relates to system and method for substantially obstructing magnetic flux. One aspect of the present invention provides an apparatus for substantially obstructing at least one magnetic flux path between an ambient space and a protected volume. The apparatus includes an inner shield, substantially enclosing the protected volume. The inner shield has at least one inner shield aperture extending therethrough to allow external access to the protected volume. An outer shield substantially encloses the inner shield. The outer shield has at least one outer shield aperture extending therethrough to allow internal access from the ambient space. The apparatus is configured to impede magnetic flux between at least one inner shield aperture and at least one outer shield aperture.Type: GrantFiled: December 7, 2009Date of Patent: October 8, 2013Assignee: Northrop Grumman Guidance & Electronics Company, Inc.Inventors: Henry C. Abbink, Edward Kanegsberg
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Patent number: 8530249Abstract: In one implementation, a chamber is selected that accommodates an array of die structures that comprises one or more cavities. An inner chamber of the chamber is maintained at a first temperature. An alkali metal source of the chamber is maintained at a second temperature greater than the first temperature. An outer chamber of the chamber is maintained at a third temperature greater than the first temperature and the second temperature. The one or more cavities of the array of die structures are filled with a portion of the alkali metal source. The one or more cavities of the array of die structures are sealed to comprise the portion of the alkali metal source.Type: GrantFiled: May 16, 2011Date of Patent: September 10, 2013Assignee: Northrop Grumman Systems CorporationInventors: Henry C. Abbink, William P. Debley, Christine E. Geosling, Daryl K. Sakaida, Robert E. Stewart
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Publication number: 20110271744Abstract: A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.Type: ApplicationFiled: July 19, 2011Publication date: November 10, 2011Applicant: Northrop Grumman Systems CorporationInventors: Henry C. Abbink, Gabriel M. Kuhn, Howard Ge, Daryl Sakaida
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Publication number: 20110219729Abstract: In one implementation, a chamber is selected that accommodates an array of die structures that comprises one or more cavities. An inner chamber of the chamber is maintained at a first temperature. An alkali metal source of the chamber is maintained at a second temperature greater than the first temperature. An outer chamber of the chamber is maintained at a third temperature greater than the first temperature and the second temperature. The one or more cavities of the array of die structures are filled with a portion of the alkali metal source. The one or more cavities of the array of die structures are sealed to comprise the portion of the alkali metal source.Type: ApplicationFiled: May 16, 2011Publication date: September 15, 2011Inventors: Henry C. Abbink, William P. Debley, Christine E. Geosling, Daryl K. Sakaida, Robert E. Stewart
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Patent number: 8007166Abstract: A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.Type: GrantFiled: May 24, 2006Date of Patent: August 30, 2011Assignee: Northrop Grumman Systems CorporationInventors: Henry C. Abbink, Gabriel M. Kuhn, Howard Ge, Daryl Sakaida
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Patent number: 7973611Abstract: An apparatus in one example comprises a die structure that comprises a middle layer, a first outside layer, and a second outside layer. The middle layer comprises a cavity that holds an alkali metal, and one of the first outside layer and the second outside layer comprises a channel that leads to the cavity. The middle layer, the first outside layer, and the second outside layer comprise dies from one or more wafer substrates.Type: GrantFiled: September 11, 2007Date of Patent: July 5, 2011Assignee: Northrop Grumman Guidance and Electronics Company, Inc.Inventors: Henry C. Abbink, William P. Debley, Christine E. Geosling, Daryl K. Sakaida, Robert E. Stewart
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Publication number: 20110133738Abstract: An aspect of the present invention relates to system and method for substantially obstructing magnetic flux. One aspect of the present invention provides an apparatus for substantially obstructing at least one magnetic flux path between an ambient space and a protected volume. The apparatus includes an inner shield, substantially enclosing the protected volume. The inner shield has at least one inner shield aperture extending therethrough to allow external access to the protected volume. An outer shield substantially encloses the inner shield. The outer shield has at least one outer shield aperture extending therethrough to allow internal access from the ambient space. The apparatus is configured to impede magnetic flux between at least one inner shield aperture and at least one outer shield aperture.Type: ApplicationFiled: December 7, 2009Publication date: June 9, 2011Inventors: Henry C. Abbink, Edward Kanegsberg
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Patent number: 7605013Abstract: An apparatus comprising at least one multilayer wafer which includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the apparatus may be an accelerometer having two photodiodes formed on a silicon-on-insulator (SOI) wafer with the photodiodes defined by one or more etched channels extending through the device layer of the SOI wafer. Also disclosed are methods for forming such an apparatus.Type: GrantFiled: March 13, 2008Date of Patent: October 20, 2009Assignee: Northrop Grumman CorporationInventor: Henry C. Abbink
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Publication number: 20080184778Abstract: A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.Type: ApplicationFiled: May 24, 2006Publication date: August 7, 2008Applicant: Northrop Grumman CorporationInventors: Henry C. Abbink, Gabriel M. Kuln, Howard Ge, Daryl Sakaida
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Publication number: 20080160668Abstract: An apparatus comprising at least one multilayer wafer which includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the apparatus may be an accelerometer having two photodiodes formed on a silicon-on-insulator (SOI) wafer with the photodiodes defined by one or more etched channels extending through the device layer of the SOI wafer. Also disclosed are methods for forming such an apparatus.Type: ApplicationFiled: March 13, 2008Publication date: July 3, 2008Applicant: LITTON SYSTEMS, INC.Inventor: Henry C. Abbink
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Patent number: 7382002Abstract: An apparatus comprising at least one multilayer wafer includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the apparatus may be an accelerometer having two photodiodes formed on a silicon-on-insulator (SOI) wafer with the photodiodes defined by one or more etched channels extending through the device layer of the SOI wafer. Also disclosed are methods for forming such an apparatus.Type: GrantFiled: December 9, 2004Date of Patent: June 3, 2008Assignee: Litton Systems, Inc.Inventor: Henry C. Abbink
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Patent number: 7292031Abstract: A cell in one example comprises an alkali metal and a coating of parylene on an interior surface of the cell. In one implementation, the alkali metal may be an optically pumped gaseous phase of an alkali metal. The parylene coating minimizes interaction of the excited state of the alkali metal, increases lifetime of the excited state, and minimizes interaction of nuclear spin states with the cell walls.Type: GrantFiled: December 20, 2005Date of Patent: November 6, 2007Assignee: Northrop Grumman CorporatinInventors: Henry C. Abbink, Edward Kanegsberg, Kenneth D. Marino, Charles H. Volk
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Patent number: 7292111Abstract: An apparatus in one example comprises a die structure that comprises a middle layer, a first outside layer, and a second outside layer. The middle layer comprises a cavity that holds an alkali metal, and one of the first outside layer and the second outside layer comprises a channel that leads to the cavity. The middle layer, the first outside layer, and the second outside layer comprise dies from one or more wafer substrates.Type: GrantFiled: April 26, 2004Date of Patent: November 6, 2007Assignee: Northrop Grumman CorporationInventors: Henry C. Abbink, William P. Debley, Christine E. Geosling, Daryl K. Sakaida, Robert E. Stewart
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Patent number: 7239135Abstract: An NMR gyroscope in one example comprises a support structure affixed within an enclosure, an NMR cell affixed to the support structure, a plurality of permanent magnets disposed about the NMR cell to produce a magnetic field within the cell, and a field coil disposed proximate the cell to produce a modulated magnetic field transverse to the magnetic field produced by the permanent magnets.Type: GrantFiled: December 20, 2005Date of Patent: July 3, 2007Assignee: Northrop Grumman CorporationInventors: Henry C. Abbink, Edward Kanegsberg, Ralph A. Patterson