Abstract: According to an embodiment, a quantum cryptographic device includes a memory and one or more processors coupled to the memory. The one or more processors are configured to: tabulate information on an application key transmitted and received by using a quantum cryptographic key and output an application-key information tabulation result; calculate a unit price of the application key based on the application-key information tabulation result; and display information that is display information including the unit price of the application key.

Abstract: A set screw (56) is provided, which has a screw main body (71), a male thread portion (75) which is formed on an outer periphery of the screw main body (71), and a drain hole (78) which penetrates a central portion of the screw main body (71) in an extension direction of the screw main body (71). The blade root ring (53) has a hole (63) which extends radially outward from an inner peripheral surface (53a) of the blade root ring (53), and a female thread portion (64) which is formed on an inner peripheral surface (63a) of the hole (63), and the set screw (56) is screwed into the female thread portion (64).

Abstract: A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.

Abstract: A learning means 71 learns, based on learning data containing the meaning of a column in a table and the meaning of the table, a model indicating regularity between the meaning of the column in the table and the meaning of the table. An estimation means 72 estimates the meaning of the table based on the meaning of a column of a table to be input and the model.

Abstract: Disclosed a substrate liquid processing apparatus including: a liquid processing section configured to process a substrate with a processing liquid; a processing liquid supply section configured to supply the processing liquid; a diluent supply section configured to supply a diluent for diluting the processing liquid; a controller configured to control the diluent supply section; a concentration detection unit configured to detect a concentration of the processing liquid; and an atmospheric pressure detection unit configured to detect an atmospheric pressure.

Abstract: In a substrate liquid processing method for performing an etching process by bringing an etching liquid for removing a coating film into contact with a surface of a substrate having a recess and covered with a coating film inside and outside the recess, the substrate liquid processing method includes: a first coating film removal step of setting the etching liquid to a first temperature so as to attain a first etching rate and removing the coating film outside the recess in a first process time; and thereafter, a second coating film removal step of setting the etching liquid to a second temperature so as to attain a second etching rate lower than the first etching rate and removing the coating film outside the recess in the second process time while leaving the coating film inside the recess.

Abstract: An airflow generation device having a first dielectric substrate made from a rubber elastic material, a first electrode on or near by a first surface of the first dielectric substrate, a second electrode on a second surface, and a second dielectric substrate made from a rubber elastic material covering the second electrode. It makes the airflows generated by plasma caused from partial gas near by the first surface through applied voltage into the first electrode and the second electrode, and bonding portions between the first electrode and the second electrode and the first dielectric substrate, bonding portions between the second electrode and the second dielectric substrate, and bonding portions between the first dielectric substrate and the second dielectric substrate are bonded by chemical bonds with chemically crosslinking.

Abstract: Disclosed is a method for performing a liquid processing on a substrate using an aqueous solution of a chemical agent at a predetermined concentration as a processing liquid. The method includes: storing the processing liquid in a processing liquid storage unit; and supplying an aqueous solution of the chemical agent at a different concentration from the concentration of the processing liquid to the processing liquid storage unit, discharging the processing liquid from the processing liquid storage unit so as to update the processing liquid stored in the processing liquid storage unit. The aqueous solution in a predetermined amount is supplied to the processing liquid storage unit, and the processing liquid is discharged from the processing liquid storage unit, the processing liquid containing the chemical agent in the same amount as the amount of the chemical agent contained in the aqueous solution supplied to the processing liquid storage unit.

Abstract: During a normal operation, a refrigeration cycle device is switched to a refrigerant circuit in which heat contained in a high-pressure refrigerant flowing out of an interior radiator is stored in a heat storage member. When frost is formed on an evaporator, the refrigeration cycle device is switched to another refrigerant circuit in which the exterior heat exchanger is heated and defrosted using heat stored in the heat storage member as a heat source. The heat storage member uses a material formed by adding W (tungsten) as an additive to VO2 (vanadium dioxide) which is a transition metal oxide having a property of a phase transition between a metal and an insulator. The heat storage member effectively stores or dissipates heat depending on a temperature zone of the refrigerant, thereby suppressing an increase in energy consumption of a compressor.

Abstract: A non-pulsation pump is provided with: a cam mechanism that converts the rotational motion of a shared motor into reciprocal motion having a prescribed phase difference; a plurality of cross heads that make reciprocal motion with a prescribed phase difference through the cam mechanism; and a plurality of reciprocating pumps that are driven with a prescribed phase difference and that include plungers connected to the cross heads, wherein the total discharge flowrate toward a shared discharge pipe is kept constant. This non-pulsation pump includes a preliminary compression step for moving the plungers of the reciprocating pumps to a discharge side by very small amounts before a discharging step but after a suction step, and has a stroke adjustment mechanism for adjusting the effective stroke length of the plunger in the preliminary compression step. Thus, generation of pulsation can be suppressed even when the set pressure changes.

Abstract: Compositions containing one or more amino acids selected from the group consisting of 25 mol % to 45 mol % of leucine, and 20 mol % to 40 mol % of phenylalanine relative to the total content of leucine, lysine, valine, isoleucine, phenylalanine, histidine, and tryptophan, are useful for improving cognitive function, for improving anxiety-like symptoms, and for suppressing cerebral atrophy and are highly safe and can be ingested or administered continuously.

Abstract: The present invention pertains to the improvement of a miRNA inhibitor (a synthesized Tough Decoy (S-TuD)). The present invention provides a miRNA inhibitory complex including RNA or an analog thereof, wherein the RNA inhibitory complex includes at least one double-stranded structure and a miRNA binding sequence, each of two strands of the miRNA binding sequence being bound to two strands of at least one end of the double-stranded structure, and the miRNA inhibitory complex further includes at least one crosslinked nucleic acid.

Abstract: In a substrate liquid processing method for performing an etching process by bringing an etching liquid for removing a coating film into contact with a surface of a substrate having a recess and covered with a coating film inside and outside the recess, the substrate liquid processing method includes: a first coating film removal step of setting the etching liquid to a first temperature so as to attain a first etching rate and removing the coating film outside the recess in a first process time; and thereafter, a second coating film removal step of setting the etching liquid to a second temperature so as to attain a second etching rate lower than the first etching rate and removing the coating film outside the recess in the second process time while leaving the coating film inside the recess.

Abstract: A substrate liquid processing apparatus includes a liquid processing unit configured to store a processing liquid and a substrate and process the substrate using the processing liquid, the processing liquid including a phosphoric acid aqueous solution; a phosphoric acid aqueous solution supply unit configured to supply the phosphoric acid aqueous solution to the liquid processing unit; a discharge line connected to the liquid processing unit, and configured to discharge the processing liquid; a return line switchably connected to the discharge line, and configured to return the processing liquid to the liquid processing unit; a recycling line switchably connected to the discharge line, and including a recycling unit configured to recycle the processing liquid; and a waste line switchably connected to the discharge line, and configured to discard the processing liquid to the outside.

Abstract: A substrate liquid processing method comprises: providing a substrate liquid processing apparatus that includes a processing liquid flow path including a concentration sensor and a heater configured to heat the processing liquid; measuring a period of time for which the processing liquid is retained in the part of the processing liquid flow path including the concentration sensor; when determined that the period of time measured by the timer is longer than a predetermined period of time, 1) heating the processing liquid to a temperature higher than a crystallization temperature at which a reaction between the processing liquid and the cleaning fluid resulting in crystallization occurs, 2) supplying at least a part of the heated processing liquid into the part of the processing liquid flow path including the concentration sensor; and supplying the cleaning fluid into the part of the processing liquid flow path including the concentration sensor.

Abstract: A substrate liquid treatment method in one embodiment includes, storing a phosphoric acid solution in a processing bath provided in a liquid treatment unit, and immersing a substrate into the stored phosphoric acid solution to process the substrate, draining a phosphoric acid solution at a first drainage flow rate from the liquid treatment unit, and supplying a phosphoric acid solution to the liquid treatment unit, in a first time period in which the substrate is immersed in the phosphoric acid solution in the processing bath, and draining a phosphoric acid solution at a second drainage flow rate different from the first drainage flow rate, from the liquid treatment unit, and supplying a phosphoric acid solution to the liquid treatment unit, in a second time period in which the substrate is immersed in the phosphoric acid solution in the processing bath.

Abstract: A substrate liquid processing apparatus includes a liquid processing unit configured to store a processing liquid and a substrate and process the substrate using the processing liquid, the processing liquid including a phosphoric acid aqueous solution; a phosphoric acid aqueous solution supply unit configured to supply the phosphoric acid aqueous solution to the liquid processing unit; a discharge line connected to the liquid processing unit, and configured to discharge the processing liquid; a return line switchably connected to the discharge line, and configured to return the processing liquid to the liquid processing unit; a recycling line switchably connected to the discharge line, and including a recycling unit configured to recycle the processing liquid; and a waste line switchably connected to the discharge line, and configured to discard the processing liquid to the outside.

Abstract: Provided is a substrate liquid processing apparatus includes a processing liquid flow path through which a processing liquid flows; a cleaning fluid supply unit that supplies a cleaning fluid into the processing liquid flow path to thereby clean at least a part of the processing liquid flow path; a heater that heats the processing liquid; and a controller that controls the cleaning fluid supply unit and the heater. The controller controls the heater to heat the processing liquid to a temperature higher than a temperature at which crystallization is caused by a reaction between the processing liquid and the cleaning fluid, such that the heated processing liquid is supplied into the processing liquid flow path which retains the processing liquid of the temperature at which crystallization is caused by the reaction, and then controls the cleaning fluid supply unit to supply the cleaning fluid into the processing liquid flow path.

Abstract: Disclosed is a substrate liquid processing apparatus that includes: a liquid processing unit that performs a liquid processing on a film formed on a surface of a substrate with an etching liquid; an etching liquid supply unit that supplies an etching liquid to the liquid processing unit; and a controller that controls the etching liquid supply unit. The controller is configured to perform a control such that an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit.