Abstract: Exposure systems are disclosed having a configuration in which a field stop is positioned in proximity to a reflection-type mask, but that satisfactorily minimize adverse effects on the image-forming performance of the projection-optical system. The systems transfer a mask pattern accurately and with high throughput onto a photosensitive substrate. The system comprises an illumination-optical system (1, 2) that illuminates a reflection-type mask (M) on which is formed a prescribed pattern. A projection-optical system forms an image of the mask pattern on the photosensitive substrate (W). The mask and substrate are moved in a prescribed direction relative to the projection-optical system to project the mask pattern onto and expose the photosensitive substrate. The illumination-optical system has a field stop (19), positioned in proximity to the mask, that defines the illumination area on the mask. The interval between the mask and the field stop satisfies a prescribed conditional relation.

Abstract: An exposure apparatus (EA2) that uses X-ray radiation in a photolithographic process and can obtain various measurements regarding the X-ray radiation used, by obtaining and analyzing readings of the photoelectric effect on various reflective surfaces (5, 60a, 60b, 7, 7a, 9a, 9b, 9c and 9d) or optical elements (50a and 51). With the measurements of the X-ray radiation, the exposure apparatus can control the exposure dose during the mask (8) and wafer (10) illumination process. The exposure system also has the ability to detect deformation in the mirrors (9a, 9b, 9c and 9d) of the projection optical system caused by heat generated by absorption of the X-ray radiation. This is accomplished by analyzing the photoelectric effect occurring on the mirror surfaces and correcting the deformation of the mirrors based on this analysis.

Abstract: A projection system projects a pattern formed on a mask onto a photosensitive substrate. An illumination optical system forms an illumination field at a position on the mask. A drive relatively moves the mask and the photosensitive substrate with respect to the projection system along a predetermined scanning exposure direction. A first illumination adjustment mechanism adjusts an illumination characteristic along the scanning exposure direction. A second illumination adjustment mechanism adjusts an illumination characteristic in a direction crossing the scanning exposure direction. A first telecentricity adjustment mechanism applies an inclined component to telecentricity. A second telecentricity adjustment mechanism adjusts the telecentricity relative to the position of an optical axis.

Abstract: An illumination optical system, exposure apparatus, and microdevice manufacturing method where the illumination optical system has provided in one or more optical paths of actinic light IL emitted from one or more actinic light sources two or more filter members having transmittance distributions substantially definable by one or more functions comprising one or more functions of order three or higher with respect to transmittance as a function of position in one or more directions substantially transverse to one or more optical axes.

Abstract: An imaging optical system may be capable of forming substantially in one or more second planes one or more complete and/or partial images of one or more objects arranged substantially in one or more first planes and may comprise one or more entrance pupils, at least one of which is located substantially on an opposite side of at least one of the first plane or planes from the imaging optical system exclusive of the at least one entrance pupil so located. Such imaging optical system may be constructed so as to be substantially telecentric on at least a same side thereof as at least one of the second plane or planes.

Abstract: A projection optical system for forming an image of a pattern in a first plane onto a second plane using exposure light in a wavelength region of shorter than 200 nm. When a projection pattern placed in the first plane and having a dark pattern and a light pattern around the dark pattern is projected onto the second plane, an average illuminance in a area where a projected image of the dark pattern is formed in the second plane is 8 or less, where an illuminance of an image of the light pattern around the dark pattern in the second plane is set to be 100.

Abstract: An illumination apparatus for illuminating a surface to be illuminated with radiation comprises a radiation source for generating a beam of radiation having a predetermined wavelength, a wavefront division type optical integrator including a plurality of unit optical systems, a condenser optical system for guiding the beams of radiation from the wavefront division type optical integrator to the surface to be illuminated, and a plurality of auxiliary optical members (OMA) for deflecting the beams of radiation through the unit optical systems. At least one of the auxiliary optical members is disposed corresponding to one of the unit optical systems.

Abstract: An illumination system and exposure apparatus and method involving illuminating a surface over an illumination field (IF) having an arcuate shape. The illumination system comprises a light source (54) for providing a light beam (100), and an optical integrator (56). The optical integrator comprises a first reflective element group (60) having an array of first optical elements (E) each having an arcuate profile corresponding to the arcuate shape of the illumination field. Each of the first optical elements has an eccentric reflecting surface (RSE) comprising an off-axis section of either a spherical surface (S) or an aspherical surface (ASE). The array of first optical elements is designed so as to form a plurality of arcuate light beams (108) capable of forming a plurality of light source images (I).

Abstract: An illumination system and exposure apparatus and method involving illuminating a surface over an illumination field (IF) having an arcuate shape. The illumination system comprises a light source (54) for providing a light beam (100), and an optical integrator (56). The optical integrator comprises a first reflective element group (60) having an array of first optical elements (E) each having an arcuate profile corresponding to the arcuate shape of the illumination field. Each of the first optical elements has an eccentric reflecting surface (RSE) comprising an off-axis section of either a spherical surface (S) or an aspherical surface (ASE). The array of first optical elements is designed so as to form a plurality of arcuate light beams (108) capable of forming a plurality of light source images (I).

Abstract: An optical apparatus and method guide EUV radiation to a predetermined surface. A radiation source supplies EUV radiation having a certain dispersion angle. An illumination optical system having a reflective integrator forms a secondary radiation source having a predetermined shape based on the EUV radiation supplied from the radiation source. A projection optical system is arranged in an optical path between a reflective mask and the predetermined surface and forms an image of the reflective mask onto the predetermined surface based on the EUV radiation from the reflective mask. The secondary radiation source having the predetermined shape has a shape that is a substantially circular shape, an annular shape, or a multipolar shape.

Abstract: A method for performing optical adjustments of an exposure apparatus is based on an exposure apparatus having a light source for generating illumination light for exposure, and illumination optics for irradiating a mask with the illumination light generated from the exposure light source so as to imprint a mask pattern on a substrate base.

Abstract: A projection optical system of an exposure device controls spherical aberrations in optical elements by providing optical elements with an aspherical surface shape corrected in accordance with a non-even function Z=g(h) having a derivative that becomes zero on a rotation axis of the aspheric surface.

Abstract: An exposure apparatus that exposes an image of a pattern of a mask onto a photosensitive substrate with EUV radiation, and includes a radiation source unit and an exposure apparatus body unit. The exposure apparatus body unit includes an optical integrator, a mirror arranged in an optical path between the radiation source unit and the optical integrator, a detector arranged in an optical path of the exposure apparatus body unit, and a controller which is connected to the detector and which controls an inclination of the mirror based on an output from the detector. In addition, the radiation source unit and the exposure apparatus body unit are installed independently.

Abstract: A projection exposure apparatus (10) for forming an image of a pattern present on a first object such as a reticle (R) onto a second object, such as a wafer (W). The apparatus comprises along three optical axes (AZ1, AX, AZ2), an illumination optical system capable of illuminating the reticle with partially polarized light, and a catadioptric projection optical system (40-70) arranged adjacent the reticle and opposite the illumination optical system. The catadioptric projection optical system comprises one or more substantially spherical mirrors (48), a plurality of refractive members (42, 48, 72, 74), and one or more plane mirrors (60, 66). The plane mirrors are designed and arranged so as to allow a substantially unpolarized image of the reticle pattern, which is illuminated with partially polarized light, to be formed on the wafer.

Abstract: A projection optical system for forming an image of a pattern in a first plane onto a second plane using exposure light in a wavelength region of shorter than 200 nm. When a projection pattern placed in the first plane and having a dark pattern and a light pattern around the dark pattern is projected onto the second plane, an average illuminance in a area where a projected image of the dark pattern is formed in the second plane is 8 or less, where an illuminance of an image of the light pattern around the dark pattern in the second plane is set to be 100.

Abstract: A method and illumination optical system forms a modified illumination configuration on an optical integrator so that a secondary light source having a desired modified illumination configuration is formed and light loss is minimized. A light beam shape changing element that diffuses illumination in a plurality of directions, and an angular light beam forming element that forms a plurality of light source images operate together to create a modified illumination configuration on the optical integrator. Since the secondary light source has a desired modified illumination configuration, an aperture stop used to restrict the size and/or shape of the secondary light source blocks only a small amount of illumination, or can be eliminated altogether.

Abstract: A method and illumination optical system forms a modified illumination configuration on an optical integrator so that a secondary light source having a desired modified illumination configuration is formed and light loss is minimized. A light beam shape changing element that diffuses illumination in a plurality of directions, and an angular light beam forming element that forms a plurality of light source images operate together to create a modified illumination configuration on the optical integrator. Since the secondary light source has a desired modified illumination configuration, an aperture stop used to restrict the size and/or shape of the secondary light source blocks only a small amount of illumination, or can be eliminated altogether.

Abstract: Sources are disclosed for producing short-wavelength electromagnetic radiation (EMR) such as extreme ultraviolet (“EUV” or “soft X-ray”) radiation useful in microlithography. The sources collect a greater amount of the EMR produced by a plasma than conventional sources and form the collected EMR into an illumination EMR flux having higher intensity than conventionally. The EMR flux desirably has a rotationally symmetrical intensity distribution. The plasma is produced by two electrodes contained in a vacuum chamber. A high-voltage pulsed power supply applies a plasma-creating potential across the electrodes. EMR produced by the plasma is collected, typically by a reflective element configured to form a collimated beam of EMR. The electrodes are configured and oriented such that, as the collimated beam passes by the electrodes, the electrodes exhibit minimal blocking of the EMR flux.

Abstract: A method and illumination optical system forms a modified illumination configuration on an optical integrator so that a secondary light source having a desired modified illumination configuration is formed and light loss is minimized. A light beam shape changing element that diffuses illumination in a plurality of directions, and an angular light beam forming element that forms a plurality of light source images operate together to create a modified illumination configuration on the optical integrator. Since the secondary light source has a desired modified illumination configuration, an aperture stop used to restrict the size and/or shape of the secondary light source blocks only a small amount of illumination, or can be eliminated altogether.

Abstract: Methods are disclosed for correcting the wave aberrations of light reflected from multilayer-film mirrors as used in, e.g., optical systems as used for EUV lithography (EUVL) apparatus. Wave aberrations are corrected by addition and/or removal of one or more layers (typically layer-sets) to and from, respectively, the surface of the multilayer film of the mirror. In certain embodiments, layer-removal is monitored in situ by any of several techniques. In other embodiments, mirror substrates are processed to a prescribed shape precision and surface roughness, followed by formation of the multilayer film and assembly of the mirrors into the intended optical assembly. The wave aberration is measured at operating wavelength. If the measured wave aberration is not within specifications, then the mirrors are corrected individually by selective removal and/or addition of layer-set(s). The corrected mirrors are reassembled and re-tested as an optical assembly. This cycle is repeated as required.