Patents by Inventor Hideki Yagi
Hideki Yagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11837620Abstract: A photo receiver includes a photo detector including a semiconductor substrate having a first main surface and a second main surface and a metal pattern layer provided on the second main surface; and a carrier including a supporting substrate having a third main surface facing the second main surface and a solder pattern layer provided on the third main surface. The solder pattern layer is bonded to the metal pattern layer. The first main surface is provided with a variable optical attenuator, an optical 90-degree hybrid device, and a plurality of photodiodes optically coupled to the variable optical attenuator via the optical 90-degree hybrid device. The solder pattern layer and the metal pattern layer are located in a peripheral area surrounding a central area where the variable optical attenuator and the optical 90-degree hybrid device are located when viewed in the normal direction of the first main surface.Type: GrantFiled: January 26, 2021Date of Patent: December 5, 2023Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Hideki Yagi, Takuya Okimoto, Munetaka Kurokawa
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Publication number: 20230384155Abstract: A light receiving device includes a semiconductor substrate having a first major surface and a second major surface opposite to the first major surface, and a metal pattern layer provided on the second major surface. The first major surface is provided with a first input port configured to receive an input of signal light, a second input port configured to receive an input of local oscillation light, a first light receiving element optically coupled to the first input port, an optical 90 degree hybrid element optically coupled to the first input port and the second input port, and a second light receiving element optically coupled to the optical 90 degree hybrid element. The metal pattern layer contains at least one of titanium or chromium.Type: ApplicationFiled: March 22, 2023Publication date: November 30, 2023Applicant: Sumitomo Electric Industries, Ltd.Inventors: Takuya OKIMOTO, Hideki YAGI, Takuya MITARAI
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Patent number: 11777274Abstract: A semiconductor optical device includes a substrate including a waveguide made of silicon and a semiconductor layer joined to the substrate so as to overlap the waveguide and including a diffraction grating formed of a first semiconductor layer and a second semiconductor layer having different refractive indices. The waveguide includes a bent portion and a plurality of straight portions that are connected to each other by the bent portion and that extend straight. The first semiconductor layer and the second semiconductor layer are each made of a compound semiconductor. The second semiconductor layer is embedded in the first semiconductor layer and includes a plurality of portions arranged in a direction in which the plurality of straight portions extend. The diffraction grating is positioned above the plurality of straight portions.Type: GrantFiled: October 4, 2021Date of Patent: October 3, 2023Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Takuo Hiratani, Hideki Yagi, Naoki Fujiwara
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Publication number: 20230275400Abstract: A method for producing a semiconductor optical device includes the steps of bonding a semiconductor chip to an SOI substrate having a waveguide, the semiconductor chip having an optical gain and including a first cladding layer, a core layer, and a second cladding layer that contain III-V group compound semiconductors and are sequentially stacked in this order, forming a covered portion with a first insulating layer on the second cladding layer, etching partway in the thickness direction the second cladding layer exposed from the first insulating film, forming a second insulating film covering from the covered portion to a part of a remaining portion of the second cladding layer, and forming a first tapered portion that is disposed on the waveguide and tapered along the extending direction of the waveguide by etching the core layer and the second cladding layer exposed from the second insulating film.Type: ApplicationFiled: May 4, 2023Publication date: August 31, 2023Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Naoki FUJIWARA, Hideki YAGI, Takuo HIRATANI, Takehiko KIKUCHI, Toshiyuki NITTA
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Patent number: 11735888Abstract: A method for producing a semiconductor optical device includes the steps of bonding a semiconductor chip to an SOI substrate having a waveguide, the semiconductor chip having an optical gain and including a first cladding layer, a core layer, and a second cladding layer that contain III-V group compound semiconductors and are sequentially stacked in this order, forming a covered portion with a first insulating layer on the second cladding layer, etching partway in the thickness direction the second cladding layer exposed from the first insulating film, forming a second insulating film covering from the covered portion to a part of a remaining portion of the second cladding layer, and forming a first tapered portion that is disposed on the waveguide and tapered along the extending direction of the waveguide by etching the core layer and the second cladding layer exposed from the second insulating film.Type: GrantFiled: January 21, 2021Date of Patent: August 22, 2023Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Naoki Fujiwara, Hideki Yagi, Takuo Hiratani, Takehiko Kikuchi, Toshiyuki Nitta
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Patent number: 11621538Abstract: A wavelength tunable laser device includes a substrate including silicon, the substrate having a waveguide, a first semiconductor element bonded to the substrate, the first semiconductor element including an active layer of a group III-V compound semiconductor, and a second semiconductor element bonded to the substrate, the second semiconductor element facing to the first semiconductor element in a direction along which light emitted from the first semiconductor element propagates, the second semiconductor element including a grating formed of a group III-V compound semiconductor. The grating selects a wavelength of light.Type: GrantFiled: September 24, 2020Date of Patent: April 4, 2023Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventor: Hideki Yagi
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Publication number: 20230060877Abstract: A semiconductor optical device includes a substrate having an optical waveguide, a gain section formed of a compound semiconductor having an optical gain and bonded to an upper surface of the substrate, the gain section having a first mesa, and a first wiring line electrically connected to the gain section. The first mesa of the gain section is optically coupled to the optical waveguide. The substrate includes a first layer, a second layer, and a third layer. The first layer has a higher thermal conductivity than the second layer. The second layer is stacked on the first layer. The third layer is stacked on the second layer. A recess provided in the substrate extends through the third layer to the second layer in the thickness direction. The first wiring line extends from the first mesa of the gain section to the recess.Type: ApplicationFiled: August 29, 2022Publication date: March 2, 2023Applicant: Sumitomo Electric Industries, Ltd.Inventors: Naoko KONISHI, Takehiko KIKUCHI, Hideki YAGI, Nobuhiko NISHIYAMA
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Patent number: 11527866Abstract: A semiconductor optical device includes an SOI substrate having a waveguide of silicon, and at least one gain region of a group III-V compound semiconductor having an optical gain bonded to the SOI substrate. The waveguide has a bent portion and multiple linear portions extending linearly and connected to each other through the bent portion. The gain region is disposed on each of the multiple linear portions.Type: GrantFiled: October 23, 2020Date of Patent: December 13, 2022Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Naoki Fujiwara, Hideki Yagi, Hajime Shoji, Takuo Hiratani, Takehiko Kikuchi, Toshiyuki Nitta
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Patent number: 11393945Abstract: A method for manufacturing an optical semiconductor device, includes the steps of: forming a plurality of compound semiconductor layers including a sacrificial layer, an absorption layer, and a core layer; forming a first mesa from the plurality of compound semiconductor layers; forming an embedding layer that is a semiconductor layer having the first mesa embedded therein; after the step of forming the embedding layer, etching the sacrificial layer to form a chip including the plurality of compound semiconductor layers and the embedding layer; bonding the chip to a substrate comprising silicon and having a waveguide; and etching a portion of the first mesa of the chip bonded to the substrate to form a second mesa adjacent to the first mesa. The second mesa includes the core layer and is optically coupled to the waveguide of the substrate.Type: GrantFiled: February 26, 2020Date of Patent: July 19, 2022Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Hideki Yagi, Naoko Konishi, Takuo Hiratani
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Publication number: 20220158412Abstract: A semiconductor optical device includes a substrate including a waveguide made of silicon and a semiconductor layer joined to the substrate so as to overlap the waveguide and including a diffraction grating formed of a first semiconductor layer and a second semiconductor layer having different refractive indices. The waveguide includes a bent portion and a plurality of straight portions that are connected to each other by the bent portion and that extend straight. The first semiconductor layer and the second semiconductor layer are each made of a compound semiconductor. The second semiconductor layer is embedded in the first semiconductor layer and includes a plurality of portions arranged in a direction in which the plurality of straight portions extend. The diffraction grating is positioned above the plurality of straight portions.Type: ApplicationFiled: October 4, 2021Publication date: May 19, 2022Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Takuo HIRATANI, Hideki YAGI, Naoki FUJIWARA
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Patent number: 11270907Abstract: A method for producing a semiconductor device includes a step of bonding a chip to a SOI wafer, the chip being formed of a III-V group compound semiconductor and including a substrate and a first semiconductor layer; and a step of removing the substrate and the first semiconductor layer from the chip after the step of bonding. In the producing method, the first semiconductor layer has a tensile strain, and the SOI wafer and the chip are heated to a first temperature in the step of bonding, and are cooled to a second temperature lower than the first temperature after the step of bonding.Type: GrantFiled: August 21, 2020Date of Patent: March 8, 2022Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Takehiko Kikuchi, Hideki Yagi, Nobuhiko Nishiyama
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Patent number: 11231552Abstract: A photo detector includes a variable optical attenuator provided on a substrate, an optical 90-degree hybrid device provided on the substrate, and a plurality of photodiodes provided on the substrate. The plurality of photodiodes are optically coupled to the variable optical attenuator via the optical 90-degree hybrid device. The variable optical attenuator includes an optical waveguide disposed on the substrate, a heater configured to heat the optical waveguide, and an insulating layer at least partially disposed between the substrate and the optical waveguide.Type: GrantFiled: January 15, 2021Date of Patent: January 25, 2022Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Takuya Okimoto, Hideki Yagi
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Publication number: 20210249840Abstract: A method for producing a semiconductor optical device includes the steps of bonding a semiconductor chip to an SOI substrate having a waveguide, the semiconductor chip having an optical gain and including a first cladding layer, a core layer, and a second cladding layer that contain III-V group compound semiconductors and are sequentially stacked in this order, forming a covered portion with a first insulating layer on the second cladding layer, etching partway in the thickness direction the second cladding layer exposed from the first insulating film, forming a second insulating film covering from the covered portion to a part of a remaining portion of the second cladding layer, and forming a first tapered portion that is disposed on the waveguide and tapered along the extending direction of the waveguide by etching the core layer and the second cladding layer exposed from the second insulating film.Type: ApplicationFiled: January 21, 2021Publication date: August 12, 2021Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Naoki FUJIWARA, Hideki YAGI, Takuo HIRATANI, Takehiko KIKUCHI, Toshiyuki NITTA
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Publication number: 20210242268Abstract: A photo receiver includes a photo detector including a semiconductor substrate having a first main surface and a second main surface and a metal pattern layer provided on the second main surface; and a carrier including a supporting substrate having a third main surface facing the second main surface and a solder pattern layer provided on the third main surface. The solder pattern layer is bonded to the metal pattern layer. The first main surface is provided with a variable optical attenuator, an optical 90-degree hybrid device, and a plurality of photodiodes optically coupled to the variable optical attenuator via the optical 90-degree hybrid device. The solder pattern layer and the metal pattern layer are located in a peripheral area surrounding a central area where the variable optical attenuator and the optical 90-degree hybrid device are located when viewed in the normal direction of the first main surface.Type: ApplicationFiled: January 26, 2021Publication date: August 5, 2021Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Hideki YAGI, Takuya OKIMOTO, Munetaka KUROKAWA
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Publication number: 20210223476Abstract: A photo detector includes a variable optical attenuator provided on a substrate, an optical 90-degree hybrid device provided on the substrate, and a plurality of photodiodes provided on the substrate. The plurality of photodiodes are optically coupled to the variable optical attenuator via the optical 90-degree hybrid device. The variable optical attenuator includes an optical waveguide disposed on the substrate, a heater configured to heat the optical waveguide, and an insulating layer at least partially disposed between the substrate and the optical waveguide.Type: ApplicationFiled: January 15, 2021Publication date: July 22, 2021Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Takuya OKIMOTO, Hideki YAGI
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Patent number: 11053166Abstract: Provided is a transparent rare earth aluminum garnet ceramic that has a highlight transmission rate and can be mass produced. The transparent rare earth aluminum garnet ceramic is represented by general formula R3Al5O12 (R is an element selected from the group consisting of rare earth elements having an atomic number of 65 to 71) and includes Si and Y as sintering aids, or is represented by general formula R3Al5O12 (R is an element selected from the group consisting of rare earth elements having an atomic number of 65 to 70) and includes Si and Lu as sintering aids.Type: GrantFiled: September 9, 2019Date of Patent: July 6, 2021Assignee: Konoshima Chemical Co., Ltd.Inventors: Takagimi Yanagitani, Hoshiteru Nozawa, Hideki Yagi
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Publication number: 20210126428Abstract: A semiconductor optical device includes an SOI substrate having a waveguide of silicon, and at least one gain region of a group III-V compound semiconductor having an optical gain bonded to the SOI substrate. The waveguide has a bent portion and multiple linear portions extending linearly and connected to each other through the bent portion. The gain region is disposed on each of the multiple linear portions.Type: ApplicationFiled: October 23, 2020Publication date: April 29, 2021Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Naoki FUJIWARA, Hideki YAGI, Hajime SHOJI, Takuo HIRATANI, Takehiko KIKUCHI, Toshiyuki NITTA
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Publication number: 20210106566Abstract: The present invention provides in one embodiment a pharmaceutical composition for treating and/or preventing peripheral neuropathy or spinal cord injury comprising zonisamide or an alkali metal salt thereof as an active ingredient.Type: ApplicationFiled: October 20, 2020Publication date: April 15, 2021Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, Sumitomo Dainippon Pharma Co., Ltd.Inventors: Kinji OHNO, Naoki ISHIGURO, Bisei OKAWARA, Hideki YAGI, Kyotaro OTA
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Publication number: 20210098963Abstract: A wavelength tunable laser device includes a substrate including silicon, the substrate having a waveguide, a first semiconductor element bonded to the substrate, the first semiconductor element including an active layer of a group III-V compound semiconductor, and a second semiconductor element bonded to the substrate, the second semiconductor element facing to the first semiconductor element in a direction along which light emitted from the first semiconductor element propagates, the second semiconductor element including a grating formed of a group III-V compound semiconductor. The grating selects a wavelength of light.Type: ApplicationFiled: September 24, 2020Publication date: April 1, 2021Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventor: Hideki YAGI
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Publication number: 20210066117Abstract: A method for producing a semiconductor device includes a step of bonding a chip to a SOI wafer, the chip being formed of a III-V group compound semiconductor and including a substrate and a first semiconductor layer; and a step of removing the substrate and the first semiconductor layer from the chip after the step of bonding. In the producing method, the first semiconductor layer has a tensile strain, and the SOI wafer and the chip are heated to a first temperature in the step of bonding, and are cooled to a second temperature lower than the first temperature after the step of bonding.Type: ApplicationFiled: August 21, 2020Publication date: March 4, 2021Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Takehiko KIKUCHI, Hideki YAGI, Nobuhiko NISHIYAMA