Patents by Inventor Hidemi Koike
Hidemi Koike has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20070158564Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: ApplicationFiled: February 15, 2007Publication date: July 12, 2007Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Patent number: 7205554Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: GrantFiled: May 12, 2005Date of Patent: April 17, 2007Assignee: Hitachi, Ltd.Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Patent number: 7205560Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: GrantFiled: May 12, 2005Date of Patent: April 17, 2007Assignee: Hitachi, Ltd.Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Patent number: 7146872Abstract: Provision of a 3-DOF micro manipulator easy to operate and capable of executing accurate positioning, wherein the link mechanisms of the micro manipulator whose main operation is parallel 3-DOF operation are implemented by cutting, folding, and moding a sheet of metal plate. Base and end effector are connected by three link mechanisms. The three link mechanisms are manufactured by cutting and folding a flexible plate material, and are equipped with plate-like arm portions each having a spread in the axially peripheral direction of the end effector, with hinge portions that are formed longitudinally across each arm portion in order to function as revolving joints R, and with a hinge portion also formed at the middle position of the arm portion in order to function as revolving joints R. Also, a parallelogrammatic link is formed between one longitudinal end of the arm portion and the middle portion thereof in order to function as a prismatic joint pair P.Type: GrantFiled: August 8, 2002Date of Patent: December 12, 2006Assignees: Hitachi, Ltd., Hitachi Science Systems, Ltd., National Institute of Advanced Industrial Science and TechnologyInventors: Kazuhiro Morita, Motohide Ukiana, Kazuhiro Fujii, Shigeto Isakozawa, Hidemi Koike, Tamio Tanikawa
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Publication number: 20050269511Abstract: A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow (54) appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.Type: ApplicationFiled: August 11, 2005Publication date: December 8, 2005Inventors: Satoshi Tomimatsu, Hidemi Koike, Junzo Azuma, Tohru Ishitani, Aritoshi Sugimoto, Yuichi Hamamura, Isamu Sekihara, Akira Shimase
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Patent number: 6970004Abstract: Disconnection defects, short-circuit defects and the like in wiring patterns of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).Type: GrantFiled: March 19, 2004Date of Patent: November 29, 2005Assignees: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd.Inventors: Tohru Ishitani, Hidemi Koike, Aritoshi Sugimoto, Isamu Sekihara, Kaoru Umemura, Satoshi Tomimatsu, Junzo Azuma
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Patent number: 6960765Abstract: A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.Type: GrantFiled: June 8, 2001Date of Patent: November 1, 2005Assignees: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd.Inventors: Satoshi Tomimatsu, Hidemi Koike, Junzo Azuma, Tohru Ishitani, Aritoshi Sugimoto, Yuichi Hamamura, Isamu Sekihara, Akira Shimase
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Publication number: 20050211927Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: ApplicationFiled: May 12, 2005Publication date: September 29, 2005Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Publication number: 20050199828Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: ApplicationFiled: May 12, 2005Publication date: September 15, 2005Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Publication number: 20050186010Abstract: A cut target medium driving type cutting plotter, in which a cut target medium to be cut is driven in a first direction and a cutting unit is driven in a second direction perpendicular to the first direction, thereby moving the cutting unit in a two-dimensional direction relative to the cut target medium to make the cutting unit to be selectively brought into press contact with and separated from the cut target medium to cut the cut target medium in a desired shape, the cut target medium driving type cutting plotter includes a cut target medium supporting sheet to removably support the cut target medium on a surface opposite to the cutting unit. Preferably, the cut target medium is driven in the first direction together with the cut target medium supporting sheet, and the cut target medium supported on the cut target medium supporting sheet is cut by the cutting unit.Type: ApplicationFiled: January 18, 2005Publication date: August 25, 2005Applicant: GRAPHTEC KABUSHIKI KAISHAInventors: Takeya Shibata, Yuzuru Sekiguchi, Michiharu Nishijima, Tsutomu Tsuji, Hidemi Koike, Yutaka Saegusa, Kousuke Watanabe, Takayuki Tanigawa, Toshihiro Houhara, Shinichi Mukasa, Kenji Yamamoto
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Patent number: 6927391Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: GrantFiled: June 29, 2004Date of Patent: August 9, 2005Assignee: Hitachi, Ltd.Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Publication number: 20050006600Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.Type: ApplicationFiled: July 26, 2004Publication date: January 13, 2005Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
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Publication number: 20050001164Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: ApplicationFiled: June 29, 2004Publication date: January 6, 2005Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Patent number: 6794663Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.Type: GrantFiled: November 4, 2003Date of Patent: September 21, 2004Assignee: Hitachi, Ltd.Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
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Publication number: 20040178811Abstract: Disconnection defects, short-circuit defects and the like in wiring patterns of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).Type: ApplicationFiled: March 19, 2004Publication date: September 16, 2004Inventors: Tohru Ishitani, Hidemi Koike, Aritoshi Sugimoto, Isamu Sekihara, Kaoru Umemura, Satoshi Tomimatsu, Junzo Azuma
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Patent number: 6781125Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: GrantFiled: September 24, 2001Date of Patent: August 24, 2004Assignee: Hitachi, Ltd.Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Publication number: 20040089821Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.Type: ApplicationFiled: November 4, 2003Publication date: May 13, 2004Applicant: Hitachi, Ltd.Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
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Patent number: 6734687Abstract: Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).Type: GrantFiled: December 4, 2001Date of Patent: May 11, 2004Assignees: Hitachi, Ltd., Hitachi ULSI Systems, Co., Ltd.Inventors: Tohru Ishitani, Hidemi Koike, Aritoshi Sugimoto, Isamu Sekihara, Kaoru Umemura, Satoshi Tomimatsu, Junzo Azuma
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Patent number: 6717156Abstract: There are disclosed a method for fabricating (processing) a micro-sample used for the observation, analysis, and measurement by, for example, a transmission electron microscope (TEM), and an equipment for specimen fabrication (processing) used for carrying out the method. With the method for specimen fabrication (processing) of the present invention, a micro-sample to be separated and extracted from a specimen substrate is sandwiched and held between a plurality of branch beams formed at the tip of a beam. The beam holding the micro-sample is transferred onto a sample holder, and the micro-sample is mounted (firmly held) on the sample holder. After mounting the micro-sample on the sample holder, the beam is detached and separated from the mounted micro-sample. By adopting such a method, it is possible to fabricate a specimen for high reliability observation, analysis, and measurement entailing less contamination, in a shorter time and with efficiency.Type: GrantFiled: February 21, 2002Date of Patent: April 6, 2004Assignee: Hitachi, Ltd.Inventors: Masakazu Sugaya, Hiroyasu Shichi, Muneyuki Fukuda, Kaoru Umemura, Hidemi Koike
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Patent number: 6664552Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.Type: GrantFiled: November 5, 2001Date of Patent: December 16, 2003Assignee: Hitachi, Ltd.Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda