Patents by Inventor Hidemi Koike

Hidemi Koike has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4433228
    Abstract: The microwave plasma source of this invention comprises a vacuum room which forms a discharging space with discharge gas introduced therein, a means for conducting the microwave to the discharging space so that the microwave electric field is provided in the discharging space, and a means for providing the magnetic field in the discharging space located on the microwave propagating path and made up of a permanent magnet which virtually propagates the microwave.
    Type: Grant
    Filed: November 10, 1981
    Date of Patent: February 21, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Shigeru Nishimatsu, Keizo Suzuki, Noriyuki Sakudo, Ken Ninomiya, Hidemi Koike, Osami Okada, Shinjiro Katagiri, Sadayuki Okudaira
  • Patent number: 4409520
    Abstract: A microwave discharge ion source according to this invention comprises a microwave generator, a discharge chamber having ridged electrodes, and a waveguide connecting the microwave generator with the discharge chamber. This waveguide consists of a waveguide having no ridged electrode, and a waveguide having ridged electrodes. Further, a vacuum-sealing dielectric plate is disposed at an intermediate position or an end part of the waveguide having no ridged electrode. A space in the waveguide as extends from the vacuum-sealing dielectric plate to the discharge chamber is filled with a dielectric.As a result, the design and fabrication of the vacuum-sealing dielectric plate are facilitated, and a microwave discharge ion source of high performance is provided.
    Type: Grant
    Filed: March 24, 1981
    Date of Patent: October 11, 1983
    Assignee: Hitachi, Ltd.
    Inventors: Hidemi Koike, Noriyuki Sakudo, Katsumi Tokiguchi, Ichiro Kanomata
  • Patent number: 4393333
    Abstract: A microwave plasma ion source according to the present invention is designed such that a microwave electric field and a magnetic field are applied to a discharge gas introduced into a discharge region, to form plasma, from which ions are extracted. The above magnetic field is formed by means of an electromagnet provided on the low-voltage side of ion extraction electrodes and a high-permeability member provided in that section which is on the side of a waveguide and which permits the microwaves to be propagated freely.
    Type: Grant
    Filed: December 10, 1980
    Date of Patent: July 12, 1983
    Assignee: Hitachi, Ltd.
    Inventors: Noriyuki Sakudo, Katsumi Tokiguchi, Hidemi Koike, Ichiro Kanomata, Humihiko Nakashima
  • Patent number: 4316090
    Abstract: A microwave plasma ion source according to this invention is characterized by the construction of the extracting electrode in contact with the discharge chamber. The electrode is divided into a part substantially exposed to a plasma and a remaining part which is not exposed to the plasma. Moreover, both these parts are held in a state in which they are electrically connected with each other.As a result, very little P or As deposits on the surface of the electrode, and a stable high-current ion beam can be supplied over a long period of time.
    Type: Grant
    Filed: May 30, 1980
    Date of Patent: February 16, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Noriyuki Sakudo, Katsumi Tokiguchi, Hidemi Koike, Ichiro Kanomata