Abstract: An integrated trench-MOS-controlled-thyristor plus trench gated diode combination, in which the trenches are preferably formed at the same time. A backside polarity reversal process permits a backside p+ region in the thyristor areas, and only a backside n+ region in the diode areas (for an n-type device). This is particularly advantageous in motor control circuits and the like, where the antiparallel diode permits the thyristor to be dropped into existing power MOSFET circuit designs. In power conversion circuits, the antiparallel diode can conveniently serve as a freewheeling diode.

Abstract: An insulated gate turn-off thyristor, formed as a die, has a layered structure including a p+ layer (e.g., a substrate), an n? layer, a p-well, vertical insulated gate regions formed in the p-well, and n+ regions between the gate regions, so that vertical NPN and PNP transistors are formed. The thyristor is formed of a matrix of cells. Due to the discontinuity along the edge cells, a relatively large number of holes are injected into the n? epi layer and drift into the edge p-well, normally creating a higher current along the edge and lowering the breakover voltage of the thyristor. To counter this effect, the dopant concentration of the n+ region(s) near the edge is reduced to reduce the NPN transistor beta and current along the edge, thus increasing the breakover voltage. Alternatively, a deep trench may circumscribe the edge cells to provide isolation from the injected holes.

Abstract: An integrated trench-MOS-controlled-thyristor plus trench gated diode combination, in which the trenches are preferably formed at the same time. A backside polarity reversal process permits a backside p+ region in the thyristor areas, and only a backside n+ region in the diode areas (for an n-type device). This is particularly advantageous in motor control circuits and the like, where the antiparallel diode permits the thyristor to be dropped into existing power MOSFET circuit designs. In power conversion circuits, the antiparallel diode can conveniently serve as a freewheeling diode.

Abstract: Disclosed is a liquid culture medium for substance introduction, which is capable of increasing the survival rate of cells after substance introduction as much as possible when the cells are irradiated with plasma for the purpose of introducing a target substance into each of the cells. Specifically disclosed is a liquid culture medium for substance introduction, which is used for the purpose of introducing a predetermined target substance into a cell and enables introduction of the target substance into the cell by having the cell in the liquid culture medium, which contains the target substance, irradiated with a plasma jet. The liquid culture medium contains a damage preventing component that prevents the cell from damage due to the plasma jet.

Abstract: An ozone generator is provided with a pulse generator (110) that at least includes pulse generation means for generating a pulse voltage and a magnetic switch (SI2) adjusting pulse width of the generated pulse voltage, and a discharge reactor that is provided with a plurality of electrodes to which the pulse voltage for which the pulse width has been adjusted is applied, and that generates a discharge between the plurality of electrodes as a result of the pulse voltage, for which the pulse width has been adjusted, being applied thereto, and also generates ozone as a result of a raw material gas containing oxygen being supplied from the outside to between the electrodes where the discharge has been generated.

Abstract: A metal coating removing apparatus (1) includes a first electrode (13) arranged so as to be opposed to a metal coating (101) as an object to be removed, a second electrode 14 arranged so as to be opposed to the metal coating (101) at a predetermined distance from the first electrode (13), and a pulse power generator (11), for example, that functions as a discharge energy supply portion. The pulse power generator (11) supplies discharge energy between the first electrode (13) and the second electrode (14) so as to allow discharging to occur between the first electrode (13) and the second electrode (14). By allowing discharging to occur between the first electrode (13) and the second electrode (14), the metal coating (101) can be removed.

Abstract: A pulse power source which can perform high repetition of pulse signals by enhancing the throughput of a pulse source is provided. The pulse power source includes: a charger; an initial-stage capacitor section which is provided with a capacitor charged by the charger; and a magnetic pulse compression circuit which performs magnetic pulse compression of a pulse current generated by discharging a charge from the capacitor at the initial-stage capacitor section and, thereafter, outputs the pulse current. An exposure device which includes the pulse power source is also provided. The pulse power source includes, between the initial-stage capacitor section and the magnetic pulse compression circuit, a transistor which controls timing of discharging a charge from the initial-stage capacitor section, an inductor which constitutes a resonance circuit together with the capacitor at the initial stage capacitor section, and a diode which rectifies the pulse current.

Abstract: An insulated gate type thyristor includes: a first current terminal semiconductor region of a first conductivity type having a high impurity concentration; a first base semiconductor region of a second conductivity type opposite to the first conductivity type having a low impurity concentration and formed on the first current terminal semiconductor region; a second base semiconductor region of the first conductivity type having a low impurity concentration and formed on the first base semiconductor region; a second current terminal semiconductor region of the second conductivity type having a high impurity concentration and formed on the second base semiconductor region; a trench passing through the second current terminal semiconductor region and entering the second base semiconductor region leaving some depth thereof, along a direction from a surface of the second current terminal semiconductor region toward the first base semiconductor region; and an insulated gate electrode structure formed in the trench.

Abstract: An insulated gate type thyristor includes: a first current terminal semiconductor region of a first conductivity type having a high impurity concentration; a first base semiconductor region of a second conductivity type opposite to the first conductivity type having a low impurity concentration and formed on the first current terminal semiconductor region; a second base semiconductor region of the first conductivity type having a low impurity concentration and formed on the first base semiconductor region; a second current terminal semiconductor region of the second conductivity type having a high impurity concentration and formed on the second base semiconductor region; a trench passing through the second current terminal semiconductor region and entering the second base semiconductor region leaving some depth thereof, along a direction from a surface of the second current terminal semiconductor region toward the first base semiconductor region; and an insulated gate electrode structure formed in the trench.

Abstract: A metal coating removing apparatus (1) includes a first electrode (13) arranged so as to be opposed to a metal coating (101) as an object to be removed, a second electrode 14 arranged so as to be opposed to the metal coating (101) at a predetermined distance from the first electrode (13), and a pulse power generator (11), for example, that functions as a discharge energy supply portion. The pulse power generator (11) supplies discharge energy between the first electrode (13) and the second electrode (14) so as to allow discharging to occur between the first electrode (13) and the second electrode (14). By allowing discharging to occur between the first electrode (13) and the second electrode (14), the metal coating (101) can be removed.

Abstract: A method for manufacturing a discrete power rectifier device having a VLSI multi-cell design employs a two spacer approach to defining a P/N junction profile having good breakdown voltage characteristics. The method provides highly repeatable device characteristics at reduced cost. The active channel regions of the device are also defined using the same two spacers. The method is a self-aligned process and channel dimensions and doping characteristics may be precisely controlled despite inevitable process variations in spacer formation. Only two masking steps are required, and additional spacers for defining the body region profile can be avoided, reducing processing costs.

Abstract: A method for manufacturing a discrete power rectifier device having a VLSI multi-cell design employs a two spacer approach to defining a P/N junction profile having good breakdown voltage characteristics. The method provides highly repeatable device characteristics at reduced cost. The active channel regions of the device are also defined using the same two spacers. The method is a self-aligned process and channel dimensions and doping characteristics may be precisely controlled despite inevitable process variations in spacer formation. Only two masking steps are required, and additional spacers for defining the body region profile can be avoided, reducing processing costs.

Abstract: Highly oxidative water containing ozone and/or OH radicals dissolved in a large amount is prepared by dissolving an oxygen rich gas at high pressure in water and then the pressure is lowered to form fine bubbles in water from the dissolved oxygen rich gas and the fine bubbles are exposed to pulse discharge. Method of and apparatus capable of forming highly oxidative water containing ozone or OH radicals at high concentration exhibiting an oxidizing performance at a level sufficient to practical use with excellent power efficiency and productivity by discharge in water.

Abstract: An error-detecting information adding apparatus transfers original data received from an external host apparatus to a memory and to an error-detecting code generating unit in one DMA transfer so that while the original data is transferred to the memory, an error-detecting code is generated. The error-detecting code generated by the error-detecting code generating unit is transferred from the error-detecting code generating unit to the memory.

Abstract: A glow discharge generating apparatus comprises, in a glow discharge chamber, an anode, a cathode for generating a glow discharge between the cathode and the anode upon application of a negative pulse, and a triggering electrode for starting the glow discharge. To stabilize the glow discharge, the electron density distribution in the vicinity of the surface of the cathode is made uniform only during at least part of a continuous period of the glow discharge.