Abstract: There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element 1 formed by laminating a compound semiconductor layer 3 on a single crystal substrate, and dividing the single crystal substrate into pieces, the side faces 21 to 24 of each of substrate pieces 2 as the divided single crystal substrate are formed such that the side face 21 used as the reference of the substrate piece 2 forms an angle of 15° with respect to the (1-100) plane, and that the side faces 21 to 24 are formed of planes different from cleaved planes of a crystalline structure in the single crystal substrate.

Abstract: In a semiconductor light emitting device, light is lost from a side surface of a substrate; therefore, if a substrate side surface occupies a large area, it decreases light extraction efficiency. The area of the substrate side surface may be reduced by reducing a thickness of the substrate. However, a thin substrate has low mechanical strength and is cracked by a stress during work process, and that decreases the yield. A light emitting layer is formed on a substrate. After fixed to a grinding board with wax, the substrate is ground to thin. A support substrate is then bonded to the substrate for reinforcement. The substrate is fixed to an electrode and others, with the support substrate bonded to the substrate. The support substrate is lastly removed.

Abstract: A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1-x-yInyN (wherein 0.001?x<0.1, 0<y<1 and x+y<1).

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layer 13 formed on the first semiconductor layer 12; and a second-conductivity-type layer 14 formed on the active layer 13, the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layer 12 includes an intermediate layer 23 made of Ga1-nInxN (0<x<1).

Abstract: A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1?x?yInyN (wherein 0.001?x<0.1, 0<y<1 and x+y<1).

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: A semiconductor light emitting element includes a substrate 11 having a defect concentrated region 11a which has a crystal defect density higher than in the other region. On the substrate 11, a semiconductor layer 12 is formed. On the defect concentrated region 11a, a first electrode 13 is formed. On the semiconductor layer 12, a second electrode 14 is formed.

Abstract: There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element 1 formed by laminating a compound semiconductor layer 3 on a single crystal substrate, and dividing the single crystal substrate into pieces, the side faces 21 to 24 of each of substrate pieces 2 as the divided single crystal substrate are formed such that the side face 21 used as the reference of the substrate piece 2 forms an angle of 15° with respect to the (1-100) plane, and that the side faces 21 to 24 are formed of planes different from cleaved planes of a crystalline structure in the single crystal substrate.

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1?x?yInyN (wherein 0.001?x<0.1, 0<y<1 and x+y<1).

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: A method for manufacturing p-type nitride semiconductor comprising a semiconductor layer forming process where a low resistivity p-type nitride semiconductor layer is formed on a substrate by introducing the sources of p-type dopant, nitrogen and Group III sources on a substrate held at a temperature of 600° C. or higher and a cooling process for cooling the substrate which is bearing the p-type nitride semiconductor layer. The manufacturing method features in that the hole carrier concentration of the p-type nitride semiconductor layer decreases during the cooling process. A superior quality p-type nitride semiconductor is made available, without needing any annealing treatment after growth, by properly specifying the concentration of atmosphere gas and the cooling time.

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: A method for manufacturing p-type nitride semiconductor comprising a semiconductor layer forming process where a low resistivity p-type nitride semiconductor layer is formed on a substrate by introducing the sources of p-type dopant, nitrogen and Group III sources on a substrate held at a temperature of 600° C. or higher and a cooling process for cooling the substrate which is bearing the p-type nitride semiconductor layer. The manufacturing method features in that the hole carrier concentration of the p-type nitride semiconductor layer decreases during the cooling process. A superior quality p-type nitride semiconductor is made available, without needing any annealing treatment after growth, by properly specifying the concentration of atmosphere gas and the cooling time.

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1?a1?b1?xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.