Abstract: A power-supplying member comprises: a first rod-shaped member connected to power-supplied object; a second rod-shaped member connected to power supply; and a thermal-expansion absorbing member, which is disposed between the first rod-shaped member and the second rod-shaped member, and which shrinks in a longitudinal direction in response to changes in shape of the first rod-shaped member and the second rod-shaped member in the longitudinal direction due to thermal expansion.

Abstract: A plasma processing member includes a ceramic base, a plasma generating electrode embedded in the ceramic base, and an electrode power supply member connected to the plasma generating electrode. The impedance of the plasma processing member when plasma is generated using high frequency power at a frequency higher than 13.56 MHz is adjusted to 25? or less.

Abstract: An object of the present invention is to provide a heating system having a ceramic heater and a supporting member supporting the back face of the heater, so that the cost of the supporting member can be reduced, the design change of the heater is made easier and excellent flatness of the heating face on use can be maintained. The heating system has a ceramic substrate 1 having a heating face 1a and a back face 1b, a heating means 4 for generating heat from the heating face 1a of the substrate 1, a metal supporting member 6 supporting The back face 1b of the substrate 1, and a heat insulating plate 5 provided between the back face 1b of the substrate 1 and the supporting member 6.

Abstract: A joined body and method of producing the joined body are provided. A first member containing at least a ceramic and a second member containing at least one of a metal and a metal composite are joined with each other via a metal adhesive. The metal adhesive contains at least indium and at least one material containing at least a component capable of reducing the melting point of indium and is provided between the first and second members to provide a laminate. The laminate is heated at a temperature in a solid-liquid coexisting range of an alloy comprising indium and the indium melting point reducing component to join the first and second members.

Abstract: A substrate heater is provided including a plate-shaped ceramic base having a first side defining a convex heating surface on at least a portion of which a substrate is placed, a resistance-heating element embedded in the ceramic base, and a tubular member joined to a central portion on an opposed second side of the ceramic base. The convex heating surface has a central portion and a peripheral portion, wherein the height of the heating surface decreases from the central portion toward the peripheral portion thereof.

Abstract: A heating system 1 has a ceramic substrate 2 having a mounting face 2a for mounting an object W, a back face 2b and a side face 2c; a heating means 3 for generating heat from the mounting face 2a of the ceramic substrate 2; and a plate-shaped supporting metal member 4 for supporting the back face 2b of the ceramic substrate 2. According to the system, the thermal deformation of the mounting face upon heating over time may be reduced and the flatness of the object may be maintained at a low value. It is further possible to impart a mechanical strength to the heater sufficient for its handling and to reduce the production cost.

Abstract: An electrostatic chuck includes a substrate having a wafer-installing face and an opposed back face. An electrostatic chucking electrode is buried in the substrate, and an insulating layer is provided on the back face of the substrate. The substrate also includes a dielectric layer including at least the wafer-installing face and surrounding the electrostatic chucking electrode, and the insulating layer includes an insulating material having a larger volume resistivity than that of the dielectric layer.

Abstract: A support structure for supporting a ceramic susceptor in a chamber is provided. The support structure includes a supporting portion joined with a back face of the ceramic susceptor. The supporting portion includes an inner space that is separated from the atmosphere of the chamber. A cooling system is provided below the supporting portion 6. At least one thermal control portion is provided between the cooling system and the supporting portion for reducing thermal conduction from the susceptor to the cooling system.

Abstract: A substrate heating apparatus, comprises a base group including a plurality of bases, which are arranged into substantially a plate with a gap interposed between the bases and form a substrate mounting surface, and a resistance heating element provided for at least one of the bases.

Abstract: A substrate heating apparatus comprises a ceramic base including a heating surface on which a substrate is placed, and a resistance heating element buried in the ceramic base, wherein the heating surface is a concave which a central part is the lowest point and a peripheral part is the highest point.

Abstract: A substrate heating device comprises a ceramic base plate having a heating surface on which a substrate is placed, resistance heating elements buried in the ceramic base plate for respective zones into which the heating surface is divided, terminals connected to the resistance heating elements respectively, and lead wires connected to the terminals respectively and wired on an outer surface of the ceramic base plate other than the heating surface.

Abstract: The substrate heater includes a plate-shaped ceramics base having a heating surface on a side of the ceramic base for placing a substrate thereon. The substrate heater includes a resistance-heating element embedded in the ceramics base. The substrate heater includes a tubular member joined to a central portion on another side of the ceramics substrate. The heating surface has a convex shape having a central portion and a peripheral portion. The heating surface in a convex shape lowers in height as the heating surface extends from a central portion to a peripheral portion thereof.

Abstract: An object of the present invention is to provide a practical and low-cost method of reducing cold spots generated on the heating face of a ceramic susceptor and the temperature distribution on the heating face when the supporting portion is joined with the susceptor at the back face and is fitted to a chamber through a cooling system. A supporting portion 6 is joined with the back face of a ceramic susceptor. An inner space 6f separated from atmosphere in a chamber is formed. A cooling system is provided between the supporting portion 6 and chamber. Thermal control portions 12A and 12B are provided between the cooling system and supporting body 6 for reducing thermal conduction from the susceptor to the cooling system.

Abstract: An aluminum nitride sintered body contains aluminum nitride as a main component, at least one rare earth metal element in an amount of not less than 0.4 mol % and not more than 2.0 mol % as calculated in the form of an oxide thereof and aluminum oxide component in an amount of not less than 0.5 mol % and not more than 2.0 mol %. Si content of the sintered body is not more than 80 ppm and an average particle diameter of aluminum nitride grains is not more than 3 &mgr;m. The aluminum nitride sintered body hardly peels aluminum nitride grains and exhibits high resistivity of at least 108 &OHgr;·cm even in a high temperature range of, for example, 300-500° C., as well as relatively high thermal conductivity.

Abstract: A heating system 1 has a ceramic substrate 2 having a mounting face 2a for mounting an object W, a back face 2b and a side face 2c; a heating means 3 for generating heat from the mounting face 2a of the ceramic substrate 2; and a plate-shaped supporting metal member 4 for supporting the back face 2b of the ceramic substrate 2. According to the system, the thermal deformation of the mounting face upon heating over time may be reduced and the flatness of the object may be maintained at a low value. It is further possible to impart a mechanical strength to the heater sufficient for its handling and to reduce the production cost.

Abstract: An electrostatic chuck is provided, having an insulation layer including a mount plane on which a wafer is mounted, an inner electrode provided in the insulation layer, and projecting portions protruding from the mount plane which include contact planes that contact the wafer. A backside gas flows into a space defined by the mount plane, the projecting portions, and the wafer under such a condition that the wafer is attracted to the mount plane so as to maintain the temperature uniformity of the wafer. The total areas of the contact planes of the projecting portions is not less than 5% and not more than 10% with respect to the area of the inner electrode, and the heights of the projecting portions are not less than 5 &mgr;m and not more than 10 &mgr;m.

Abstract: An object of the present invention is to provide a method of heating a semiconductor on a susceptor in a chamber, in which the temperature distribution on the susceptor can be reduced even when a target temperature of the susceptor is high. The present invention provides a member 3, 4 or 10 provided around a susceptor for mounting a semiconductor in a chamber for a semiconductor production system. The member has an opposing face 3c, 4c or 10c opposing the susceptor and having a center line average surface roughness of 0.5 &mgr;m or lower. Alternatively, the opposing face has a thermal emissivity &egr; of 0.5 or lower. Alternatively, the member is a liner 4 with a supported face 4g having an area of 20 percent or lower of that of the opposing face 4c.

Abstract: An object of the present invention is to provide a method of heating a semiconductor on a susceptor in a chamber, in which the temperature distribution on the susceptor can be reduced even when the target temperature of the susceptor is high. The invention provides members 3, 4, 10 provided around a susceptor 5 for mounting a semiconductor W in a chamber 2 for a semiconductor production system. Each of the members 3, 4 and 10 has a function of generating heat by itself. More preferably, a heat generating element is embedded in each member.

Abstract: An electrostatic adsorption device has a dielectric layer, electrodes, a cooling member and an insulating adhesive. The dielectric layer is made of a ceramic dielectric material and has an adsorption face and a back face. The electrodes are provided on the back face of the dielectric layer and gaps are defined between the portions of the electrodes. The insulating adhesive is provided between the back face of the dielectric layer and the cooling member. The insulating adhesive covers the electrodes and the back face and is provided in the gaps.

Abstract: An electrostatic chuck includes a substrate having a wafer-installing face and an opposed back face. An electrostatic chucking electrode is buried in the substrate, and an insulating layer is provided on the back face of the substrate. The substrate also includes a dielectric layer including at least the wafer-installing face and surrounding the electrostatic chucking electrode, and the insulating layer includes an insulating material having a larger volume resistivity than that of the dielectric layer.