Abstract: A first member 10 containing at least ceramics and a second member 12 containing at least a metal or a metal composite was joined with each other. An adhesive 2 composed of a metal containing at least indium and materials 1A, 1B containing at least a component capable of reducing the melting point of indium between the first and second members to provide a laminate 13. The laminate 13 is heated at a temperature in solid-liquid coexisting range of an alloy comprising indium and said component to join the first member 10 and second member 12.

Abstract: An electrostatic chuck including a dielectric layer made of aluminum nitride, an inner electrode buried in the dielectric layer, and a surface layer covering a surface of the dielectric layer. The surface layer is made of a material harder than the aluminum nitride constituting the dielectric layer and having a thickness of not less than 200 nm, and the surface of the dielectric layer has a center-line average surface roughness of not more than 25 nm. The electrostatic chuck is adapted to adsorb a wafer onto the dielectric layer through the surface layer.

Abstract: The disclosed ceramics joint structure, in which a ceramics member having an oxidation resistance property and a metal member are joined via a joint layer, has a structure such that a part of the embedded member is exposed to a joint surface of the ceramics member, which is contacted with the joint layer to form a metal exposing portion, and the ceramics member and the metal exposing portion are joined via the joint layer to the metal member respectively. Moreover, the joint layer is mainly made of one or more metal selected from the group consisting of gold, platinum and palladium.

Abstract: An electrostatic chuck includes a chuck body, an insulating layer formed on a surface of the chuck body and having an installation surface on which a wafer is to be installed, an inner electrode installed inside the insulating-layer, and projections projecting from the installation surface and having contact surfaces to which the wafer is to contact. A back side gas is flown into a space defined by the installation surface, the projections and the wafer, heat is supplied to the wafer, and heat of the wafer is conducted to the electrostatic chuck through the projections and the back side gas. The total area of the contact surfaces of the projections is not more than 1% of the area of the inner electrode, and the height of the projections are not less than 1 &mgr;m and not more than 10 &mgr;m.

Abstract: An electrostatic chuck includes a chuck body, an insulating layer formed on a surface of the chuck body and having an installation surface on which a wafer is to be installed, an inner electrode installed inside the insulating layer, and projections projecting from the installation surface and having contact surfaces to which the wafer is to contact, wherein a back side gas is flown into a space defined by the installation surface, the projections and the wafer, heat is supplied to the wafer, and heat of the wafer is conducted to the electrostatic chuck through the projections and the backside gas, the total area of the contact surfaces of the projections is not more than 1% of the area of the inner electrode, and the height of the projections are not less than 1 &mgr;m and not more than 10 &mgr;m.

Abstract: An electrostatic adsorption device 1B has a dielectric layer 2, electrodes 4A and 4B, a cooling member 5 and an insulating adhesive 3. The dielectric layer 2 is made of a ceramic dielectric material and has an adsorption face and a back face. The electrodes 4A and 4B are provided on the back face 2b of the dielectric layer 2. The electrodes 4A and 4B define gaps 10. The insulating adhesive 3 is provided between the back face 2b of the dielectric layer 2 and the cooling member 5. The insulating adhesive 3 covers the electrodes 4A and 4B and the back face 2b and is provided in the gap 10.

Abstract: An aluminum nitride sintered body contains aluminum nitride as a main component, at least one rare earth metal element in an amount of not less than 0.4 mol % and not more than 2.0 mol % as calculated in the form of an oxide thereof and aluminum oxide component in an amount of not less than 0.5 mol % and not more than 2.0 mol %. Si content of the sintered body is not more than 80 ppm and an average particle diameter of aluminum nitride grains is not more than 3 &mgr;m. The aluminum nitride sintered body hardly peels aluminum nitride grains and exhibits high resistivity of at least 108 &OHgr;·cm even in a high temperature range of, for example, 300-500° C., as well as relatively high thermal conductivity.

Abstract: An electrostatic chuck having an insulation layer includes a mount plane on which a wafer is mounted, an inner electrode provide in the insulation layer, and projecting portions protruded from the mount plane which include contact planes to be contacted to the wafer. A backside gas is flowed into a space defined by the mount plane, the projecting portions, and the wafer under such a condition that the wafer is attracted to the mount plane so as to maintain a temperature uniformity of the wafer. A total amount of areas of the contact planes of the projecting portions is not less than 5% and not more than 10% with respect to an area of the inner electrode, and heights of the projecting portions are not less than 5 &mgr;m and not more than 10 &mgr;m.

Abstract: An electrostatic chuck including a dielectric layer made of aluminum nitride, an inner electrode buried in the dielectric layer, and a surface layer covering a surface of the dielectric layer. The surface layer is made of a material harder than the aluminum nitride constituting the dielectric layer and having a thickness of not less than 200 nm, and the surface of the dielectric layer has a center-line average surface roughness of not more than 25 nm. The electrostatic chuck is adapted to adsorb a wafer onto the dielectric layer through the surface layer.

Abstract: An electrostatic chuck includes a substrate having a wafer-installing face and a back face on an opposite side of the wafer-installing face, an electrostatically chucking electrode buried in the substrate, and an insulating layer provided at the back face of the substrate, the substrate including a dielectric layer facing at least the wafer-installing face and surrounding the electrostatically chucking electrode, and said insulating layer including an insulating material having a volume resistivity larger than that of the dielectric layer.

Abstract: A ceramic heater includes a ceramic substrate having a heating surface, and a resistance heating element buried inside the ceramic substrate, wherein at least a part of the resistance heating element is constituted by a conductive network member, and a ceramic material constituting the ceramic substrate is filled in meshes of the network member.

Abstract: A joint structure having a metal member and a ceramic member having a housing hole for accommodating at least a part of the metal member therein, in which an electrically conductive joint layer is formed between a bottom face of the metal member and a bottom face of the housing hole, and a film having a given wettability by the electrically conductive joint layer is formed on at least a part of the side wall face of the metal member.

Abstract: A ceramic member-electric power supply connector coupling structure includes a ceramic member with a hole and is provided with a metallic member therein so as to be partially exposed to the hole. An electric power supply connector and a tubular atmosphere-shielding member are provided in the hole. Further, a stress-mitigating, low heat expansion conductor is provided inside the atmosphere-shielding member and the power supply connector is partially positioned therein. The atmosphere-shielding member is gas-tightly joined to the power supply connector, and the expansion conductor and the tubular atmosphere-shielding member are joined to the metallic member. The coupling structure has high heat and corrosion resistance, high joining strength, and remains highly conductive even at high temperature conditions in an oxidative or corrosive environment.

Abstract: A ceramic susceptor with an embedded metal electrode. The metal electrode has multiple apertures, and the ceramic material is cross-linked through the apertures. An electrical connection to the electrode protects the electrode from the environment in the processing chamber. The ceramic may be aluminum nitride, and the metal electrode may be a mesh of molybdenum wires. To form the electrical connection, the susceptor may be heated until an eutectic forms between a conductive connector and the metal electrode. Alternately, a brazing material may be placed between the metal layer and a conductive connector.

Abstract: Novel method of joining ceramics containing aluminum nitride and another member made of a metal or a ceramic is provided having an improved joining strength and a corrosion-resistant property by joining a first member made of a ceramics consisting of an aluminum compound. The second member is made of a ceramics or a metal, forming a metal film directly on a surface to be joined of the first member interposing a metallic joining material which is made of a different material from the metal film. The metallic joining material is between the metal film and the second member, and by heating at least the metallic joining material and the metal film in such an interposed state to form a joining layer made of the metallic joining material and an intermetallic compound between the first and second members, so as to join the two members.