Patents by Inventor Hideyuki Kazumi
Hideyuki Kazumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140014836Abstract: The charged particle beam apparatus having an opening formation member formed with an opening for passage of a charged particle beam emitted from a charged particle source, and either a detector adapted to detect charged particles having passed through the passage opening or a detector adapted to detect charged particles resulting from bombardment on another member of the charged particles having passed through the opening, comprises an aligner for aligning charged particles discharged from the sample and a control unit for controlling the aligner, wherein the control unit controls the aligner to cause it to shift trajectories of the charged particles discharged from the sample so that length measurement may be executed on the basis of detection signals before and after the alignment by the aligner.Type: ApplicationFiled: July 11, 2013Publication date: January 16, 2014Inventors: Miki ISAWA, Minoru YAMAZAKI, Yuzuru MIZUHARA, Hiroshi MAKINO, Hideyuki KAZUMI
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Publication number: 20130321610Abstract: There is provided a technique to correctly select and measure a pattern to be measured even when contours of the pattern are close to each other in a sample including a plurality of patterns on a substantially same plane. A pattern measuring apparatus that scans a sample with charged particles, forms a detected image by detecting secondary charged particles or backscattered charged particles generated from the sample, and measures a pattern imaged on the detected image includes: an image acquiring section acquiring a plurality of detected images taken at a substantially same location on the sample under different imaging conditions; a contour extracting section extracting a plurality of pattern contours from the plurality of detected images; a contour reconstructing section reconstructing a contour to be measured by combining the plurality of pattern contours; and a contour measuring section making a measurement using the reconstructed contour to be measured.Type: ApplicationFiled: May 21, 2013Publication date: December 5, 2013Inventors: Yoshinori Momonoi, Koichi Hamada, Yuji Takagi, Michio Hatano, Hideyuki Kazumi
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Publication number: 20130284921Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.Type: ApplicationFiled: June 21, 2013Publication date: October 31, 2013Inventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Osamu Nasu
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Patent number: 8487253Abstract: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.Type: GrantFiled: November 18, 2011Date of Patent: July 16, 2013Assignee: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Manabu Yano, Kazunari Asao, Takeshi Mizuno, Yuki Ojima
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Patent number: 8487250Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.Type: GrantFiled: August 7, 2012Date of Patent: July 16, 2013Assignee: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Osamu Nasu
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Patent number: 8481935Abstract: A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring.Type: GrantFiled: July 25, 2011Date of Patent: July 9, 2013Assignee: Hitachi High-Technologies CorporationInventors: Akira Ikegami, Minoru Yamazaki, Hideyuki Kazumi, Koichiro Takeuchi, Hisaya Murakoshi
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Publication number: 20130009057Abstract: The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions. To accomplish the above object, a charged particle beam irradiation method and a charged particle beam apparatus are provided according to which the pre-dosing area is divided into a plurality of divisional areas and electrifications are deposited to the plural divisional areas by using a beam under different beam irradiation conditions.Type: ApplicationFiled: February 9, 2011Publication date: January 10, 2013Applicant: Hitachi High-Technologies CorporationInventors: Toshiyuki Yokosuka, Minoru Yamazaki, Hideyuki Kazumi, Kazutami Tago
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Publication number: 20120298863Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.Type: ApplicationFiled: August 7, 2012Publication date: November 29, 2012Applicant: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Osamu Nasu
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Patent number: 8309923Abstract: Provided is a sample observing method wherein the effect on throughput is minimized, and a pattern profile can be obtained at high accuracy even in a complicated LSI pattern, regardless of the scanning direction of an electron beam. In the sample observing method, the presence or absence of an edge parallel to a scanning direction (707) of an electron beam is judged regarding an edge (708) of a pattern to be observed (S702); if the edge is present, an area in the vicinity of the pattern edge is designated as a local pre-dose area (709) (S703); a local pre-dose of an electron beam is performed, so that the initial charged state is controlled not to return secondary electrons generated by irradiation of an electron beam when an image is captured, to the surface of a sample.Type: GrantFiled: February 9, 2010Date of Patent: November 13, 2012Assignee: Hitachi High-Technologies CorporationInventors: Seiko Omori, Zhaohui Cheng, Hideyuki Kazumi
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Publication number: 20120274757Abstract: The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image.Type: ApplicationFiled: November 8, 2010Publication date: November 1, 2012Inventors: Jie Bai, Kenji Nakahira, Atsushi Miyamoto, Chie Shishido, Hideyuki Kazumi
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Patent number: 8274048Abstract: In a scanning electron microscope, an optimum scanning method for reducing the amount of deflection of a primary electron beam and secondary electrons is determined to acquire stable images. An energy filter is used to discriminate between energy levels. The change in yield of obtained electrons is used to measure the variation in specimen potential. The time constant of charging created during electron beam irradiation is extracted. The scanning method is optimized based on the extracted time constant to reduce the distortion and magnification variation that appear in a SEM image.Type: GrantFiled: June 25, 2010Date of Patent: September 25, 2012Assignee: Hitachi High-Technologies CorporationInventors: Akira Ikegami, Hideyuki Kazumi, Koichiro Takeuchi, Atsushi Kobaru, Seiko Oomori
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Patent number: 8263934Abstract: In a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged, a voltage is applied to a sample such that a charged particle beam does not reach the sample (referred to as “mirror state”) when the charged particle beam is applied toward the sample. Information is detected, relating to a potential on the sample using signals obtained by the voltage application.Type: GrantFiled: December 18, 2007Date of Patent: September 11, 2012Assignee: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Osamu Nasu
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Patent number: 8216420Abstract: A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a ? wave, concerning a method for rotating the ? wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a ?-wave merging box, and a reflective-wave control unit using a reflection control chamber.Type: GrantFiled: June 6, 2006Date of Patent: July 10, 2012Assignee: Hitachi High-Technologies CorporationInventors: Hideyuki Kazumi, Akihiro Sano, Akitaka Makino, Hitoshi Tamura, Masamichi Sakaguchi
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Patent number: 8153966Abstract: A high-resolution sample image is acquired by eliminating both of charge over an entire sample (global charge) and charge in a local region irradiated with a primary charged particle beam (local charge). An electrode unit (50) according to the present invention is used in a charged particle beam device. The electrode unit (50) includes a plate electrode disposed facing an insulator sample between an objective lens and the sample, and further includes: a first charge-neutralization charged particle beam source which emits a first charged particle beam to eliminate local charge on the sample; and a second charge-neutralization charged particle beam source (25) which emits a second charged particle beam to eliminate global charge on the sample.Type: GrantFiled: May 15, 2009Date of Patent: April 10, 2012Assignee: Hitachi High-Technologies CorporationInventors: Noriaki Arai, Hideyuki Kazumi
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Publication number: 20120061566Abstract: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.Type: ApplicationFiled: November 18, 2011Publication date: March 15, 2012Applicant: Hitachi High-Technologies CorporationInventors: Minoru YAMAZAKI, Akira IKEGAMI, Hideyuki KAZUMI, Manabu YANO, Kazunari ASAO, Takeshi MIZUNO, Yuki OJIMA
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Patent number: 8080790Abstract: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.Type: GrantFiled: February 25, 2009Date of Patent: December 20, 2011Assignee: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Manabu Yano, Kazunari Asao, Takeshi Mizuno, Yuki Ojima
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Publication number: 20110303843Abstract: Provided is a sample observing method wherein the effect on throughput is minimized, and a pattern profile can be obtained at high accuracy even in a complicated LSI pattern, regardless of the scanning direction of an electron beam. In the sample observing method, the presence or absence of an edge parallel to a scanning direction (707) of an electron beam is judged regarding an edge (708) of a pattern to be observed (S702); if the edge is present, an area in the vicinity of the pattern edge is designated as a local pre-dose area (709) (S703); a local pre-dose of an electron beam is performed, so that the initial charged state is controlled not to return secondary electrons generated by irradiation of an electron beam when an image is captured, to the surface of a sample.Type: ApplicationFiled: February 9, 2010Publication date: December 15, 2011Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Seiko Omori, Zhaohui Cheng, Hideyuki Kazumi
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Publication number: 20110278454Abstract: A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring.Type: ApplicationFiled: July 25, 2011Publication date: November 17, 2011Applicant: Hitachi High-Technologies CorporationInventors: Akira IKEGAMI, Minoru YAMAZAKI, Hideyuki KAZUMI, Koichiro TAKEUCHI, HIsaya Murakoshi
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Patent number: 7989768Abstract: A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring.Type: GrantFiled: August 8, 2008Date of Patent: August 2, 2011Assignee: Hitachi High-Technologies CorporationInventors: Akira Ikegami, Minoru Yamazaki, Hideyuki Kazumi, Koichiro Takeuchi, Hisaya Murakoshi
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Publication number: 20110068265Abstract: A high-resolution sample image is acquired by eliminating both of charge over an entire sample (global charge) and charge in a local region irradiated with a primary charged particle beam (local charge). An electrode unit (50) according to the present invention is used in a charged particle beam device. The electrode unit (50) includes a plate electrode disposed facing an insulator sample between an objective lens and the sample, and further includes: a first charge-neutralization charged particle beam source which emits a first charged particle beam to eliminate local charge on the sample; and a second charge-neutralization charged particle beam source (25) which emits a second charged particle beam to eliminate global charge on the sample.Type: ApplicationFiled: May 15, 2009Publication date: March 24, 2011Inventors: Noriaki Arai, Hideyuki Kazumi