Abstract: A semiconductor device having: a semiconductor substrate; a plurality of circuit regions formed on the semiconductor substrate, the circuit regions including circuits driven at multiple supply voltages; interlayer insulating film or films formed above the semiconductor substrate; copper wirings buried in the interlayer insulating film or films, a minimum wiring spacing between adjacent wirings in a same layer so that an electric field between adjacent wirings due to an applied voltage difference is set to 0.4 MV/cm or lower; and a copper diffusion preventive film formed on the interlayer insulating film, covering an upper surface of the copper wirings. A semiconductor device is provided which has copper wirings capable of realizing a high reliability in a long term, basing upon newly found knowledge of time dependent failure rate of wiring.

Abstract: A silicon oxide film as an insulating film is accumulated so as to cover a whole surface of a silicon substrate including a surface of a resistance element by, for example, a thermal CVD method, just after a resist pattern is removed. This silicon oxide film is processed to form a silicide block on the resistance element, and side wall spacers at both side surfaces of gate electrodes, and so on, of respective transistors, at the same time.

Abstract: A conveyance control apparatus controls an amount of movement of a carrier. A first encoder detects an amount of movement of the carrier and outputting a first signal. A second encoder detects an amount of movement of a drive member driving the carrier. A control part acquires an amount of movement of the carrier by complementing an amount of movement of the carrier acquired from the first signal by an amount of movement of the drive member acquired from the second signal. The control part corrects a value representing a corresponding relationship between the first signal and the second signal based on the complemented amount of movement so as to control the amount of movement of the carrier using the corrected value.

Abstract: A silicon oxide film as an insulating film is accumulated so as to cover a whole surface of a silicon substrate including a surface of a resistance element by, for example, a thermal CVD method, just after a resist pattern is removed. This silicon oxide film is processed to form a silicide block on the resistance element, and side wall spacers at both side surfaces of gate electrodes, and so on, of respective transistors, at the same time.

Abstract: The present invention provides a color filter comprising a transmission area and reflection area in which at least one color pixel of red, green and blue pixels is formed of the same material, wherein a transparent area having no color layer is formed in a part of the reflection area, at least one sub-area is formed in the transparent area, and the size of the sub-area is 20 ?m or more and 2,000 ?m or less. The present invention also provides a liquid crystal display for both transmission display and reflection display with a cheap manufacturing cost, wherein the difference of chromaticity between the transmission display and reflection display is small, and the surface of the transmission area and reflection area have small step heights.

Abstract: In a transport belt drive control device, a first detection unit has a first resolution and indirectly detects a feed amount of a transport belt, a control unit controls drive of the transport belt based on an output of the first detection unit, and a second detection unit has a second, lower resolution and directly detects the feed amount of the transport belt. The control unit is configured to switch, when an output of the second detection unit is determined as not allowing detection of a stop position of the transport belt, the direct detection of the belt feed amount by the second detection unit to the indirect detection of the belt feed amount by the first detection unit, so that the drive of the transport belt is controlled based on the output of the first detection unit.

Abstract: A semiconductor device having: a semiconductor substrate; a plurality of circuit regions formed on the semiconductor substrate, the circuit regions including circuits driven at multiple supply voltages; interlayer insulating film or films formed above the semiconductor substrate; copper wirings buried in the interlayer insulating film or films, a minimum wiring spacing between adjacent wirings in a same layer so that an electric field between adjacent wirings due to an applied voltage difference is set to 0.4 MV/cm or lower; and a copper diffusion preventive film formed on the interlayer insulating film, covering an upper surface of the copper wirings. A semiconductor device is provided which has copper wirings capable of realizing a high reliability in a long term, basing upon newly found knowledge of time dependent failure rate of wiring.

Abstract: The present invention provides a color filter comprising a transmission area and reflection area in which at least one color pixel of red, green and blue pixels is formed of the same material, wherein a transparent area having no color layer is formed in a part of the reflection area, at least one sub-area is formed in the transparent area, and the size of the sub-area is 20 ?m or more and 2,000 ?m or less. The present invention also provides a liquid crystal display for both transmission display and reflection display with a cheap manufacturing cost, wherein the difference of chromaticity between the transmission display and reflection display is small, and the surface of the transmission area and reflection area have small step heights.

Abstract: An n-type embedded layer is formed in an N-LV region of a SRAM cell region after an element isolation insulating film is formed on a p-type Si substrate. Thereafter, a p-well and an n-well are formed. In formation of a channel-doped layer, ion implantation is also performed into the N-LV region of the SRAM cell region in parallel with ion implantation into an N-LV of a logic circuit region. Ion-implantation is further performed into the N-LV region of the SRAM cell region in parallel with ion implantation into an N-MV of an I/O region.

Abstract: A semiconductor device includes a first CMOS inverter, a second CMOS inverter, a first transfer transistor and a second transfer transistor wherein the first and second transfer transistors are formed respectively in first and second device regions defined on a semiconductor device by a device isolation region so as to extend in parallel with each other, the first transfer transistor contacting with a first bit line at a first bit contact region on the first device region, the second transfer transistor contacting with a second bit line at a second bit contact region on the second device region, wherein the first bit contact region is formed in the first device region such that a center of said the bit contact region is offset toward the second device region, and wherein the second bit contact region is formed in the second device region such that a center of the second bit contact region is offset toward the first device region.

Abstract: An integrated circuit device comprises a memory cell well formed with a flash memory device, first and second well of opposite conductivity types for formation of high voltage transistors, and third and fourth wells of opposite conductivity types for low voltage transistors, wherein at least one of the fist and second wells and at least one of the third and fourth wells have an impurity distribution profile steeper than the memory cell well.

Abstract: Multiple kinds of transistors exhibiting desired characteristics are manufactured in fewer processes. A semiconductor device includes an isolation region reaching a first depth, first and second wells of first conductivity type, a first transistor formed in the first well and having a gate insulating film of a first thickness, and a second transistor formed in the second well and having a gate insulating film of a second thickness less than the first thickness. The first well has a first impurity concentration distribution having an extremum maximum value only at the depth equal to or greater than the first depth. The second well has a second impurity concentration distribution which is superposition of the first impurity concentration distribution, and another impurity concentration distribution which shows an extremum maximum value at a second depth less than the first depth, the superposition shows also an extremum maximum value at the second depth.

Abstract: The present invention provides a low-cost transflective liquid crystal display exhibiting high color reproducibility in a transmissive display and excellent characteristics (color reproducibility and brightness) in a reflective display. Also, the present invention provides a color filter for a bright transflective liquid crystal display. The transflective liquid crystal display includes a pair of substrates disposed opposite to each other with a liquid crystal layer held therebetween, a reflection means using ambient light as a light source, and a backlight source. The transflective liquid crystal display further includes a color filter having a transmissive region and a reflective region which are provided in each picture element of the color filter and which have colored layers comprising a single material, and a three-peak type LED backlight source.

Abstract: The semiconductor group comprises a first semiconductor device including a first design macro and a nonvolatile memory, and a second semiconductor device including a second design macro having identity with the first design macro and including no nonvolatile memory. The first design macro includes a first active region and a first device isolation region formed on a first semiconductor substrate. The second design macro includes a second active region and a second device isolation region formed on a second semiconductor substrate. A curvature radius of an upper end of the first active region in a cross section is larger than a curvature radius of an upper end of the second active region in a cross section. A difference in height between a surface of the first active region and a surface of the first device isolation region is larger than a difference in height between a surface of the second active region and a surface of the device isolation region.

Abstract: An image reading apparatus including a copy protection control apparatus including a radio frequency tag data communicating mechanism configured to receive predetermined radio frequency tag data transmitted from a radio frequency tag attached to an object material to be reproduced. A copy authorization determining mechanism determines whether reproduction of the object material is authorized based on the radio frequency tag data, and an image data reading controlling mechanism controls an image data reading mechanism and an image data outputting mechanism to perform one of a copy output process and a copy prevention process according to a result of determination performed by the copy authorization determining mechanism.

Abstract: In a flash memory having, for example, a single-gate type memory cell consisting of the gate electrode provided via a thin charge trap layer on a semiconductor substrate, there is provided a non-volatile semiconductor memory that is characterized in applying a short pulse to the memory cell to partly remove the electrons from the charge trap layer after writing the data to the memory cell. This ensures the write operation reliability of non-volatile semiconductor memory such as single-gate type flash memory or the like without changing the basic structure of the memory cell array.

Abstract: The present invention provides a color filter comprising a transmission area and reflection area in which at least one color pixel of red, green and blue pixels is formed of the same material, wherein a transparent area having no color layer is formed in a part of the reflection area, at least one sub-area is formed in the transparent area, and the size of the sub-area is 20 &mgr;m or more and 2,000 &mgr;m or less. The present invention also provides a liquid crystal display for both transmission display and reflection display with a cheap manufacturing cost, wherein the difference of chromaticity between the transmission display and reflection display is small, and the surface of the transmission area and reflection area have small step heights.

Abstract: A method of manufacturing a semiconductor device having a self-aligned contact hole includes a step of forming first gate electrode structures having a high pattern density on a gate insulating film in a first area of a semiconductor substrate and second gate electrode structures having a low pattern density on the gate insulating film in a second area, a step of forming first and second insulating films having different etching characteristics over the semiconductor substrate, a step of anisotropically etching the first and second insulating films in the second area by masking the first area to form side spacers on the second gate electrode structures, a step of forming an interlayer insulating film over the semiconductor substrate, and a step of forming in a self-alignment manner an opening reaching the source/drain region in the first area, by using the second insulating film as an etching stopper. This method allows to reliably form a self-aligned contact hole even if the pattern density is high.