Abstract: In one embodiment of the invention, circuitry and hardware for connectivity testing are fabricated on an IC, and in particular an IC containing a flash memory array. This testing circuitry is electrically connected to the bond pads of the IC. In some embodiments, the testing circuitry includes a boundary scan cell connected to each bond pad, allowing for rapid connectivity testing of flash memory chips in accordance with testing standards such as the JTAG standard. The invention further includes methods in which the pins and/or memory cells of a flash memory chip are sequentially sent a series of data so as to test the connectivity of portions of the IC. The sequentially-sent data is then retrieved and compared to the original data. Discrepancies between these sets of data thus highlight connectivity problems in the IC.

Abstract: A differential non-volatile content addressable memory array has a differential non-volatile content addressable memory cell which uses a pair of non-volatile storage elements. Each of the non-volatile storage elements can be a split-gate floating gate transistor or a stack gate floating gate transistor having a first terminal, a second terminal, a channel therebetween and a floating gate over at least a portion of the channel to control the conduction of electrons in the channel, and a control gate. The floating gate storage transistor can be in one of two states: a first state, such as erase, in which current can flow between the first terminal and the second terminal, and a second state, such as programmed, in which substantially no current flows between the first terminal and the second terminal. A pair of differential compare data lines connects to the control gate of each of the pair of non-volatile floating gate transistors.

Abstract: A high speed voltage mode sensing is provided for a digital multibit non-volatile memory integrated system. An embodiment has a local source follower stage followed by a high speed common source stage. Another embodiment has a local source follower stage followed by a high speed source follower stage. Another embodiment has a common source stage followed by a source follower. An auto zeroing scheme is used. A capacitor sensing scheme is used. Multilevel parallel operation is described.

Abstract: A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.

Abstract: A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.

Abstract: A multi-operational amplifier system comprises a plurality of operational amplifiers and a controller to configure the plurality of operational amplifiers. The operational amplifiers may be selectively configured to operate individually or in combination with other of the operational amplifiers. The operational amplifiers may have different common node inputs. In one aspect, the different inputs may be selected from groups of PMOS, N-type NMOS and NZ NMOS inputs. The operational amplifiers may include the different inputs that are arranged as differential pairs.

Abstract: Method and means for random or systematic mismatch compensation for a memory sensing system are disclosed. A sense amplifier includes a bulk voltage source to set the bulk of the sensing transistor to be a voltage different than the voltage driving the sensing transistor. For an NMOS sensing transistor, a triple well is used with the variable bulk voltage. Differential sense amplifiers with various offset compensation are included. Intentional offset creation for useful purpose is also included.

Abstract: A first embodiment of a word line voltage boosting circuit for use with an array of non-volatile memory cells has a capacitor, having two ends, connected to the word line. One end of the capacitor is electrically connected to the word line. The other end of the capacitor is electrically connected to a first voltage source. The word line is also connected through a switch to a second source voltage source. A sequencing circuit activates the switch such that the word line is connected to the second voltage source, and the other end of the capacitor is not connected to the first voltage source. Then the sequencing circuit causes the switch to disconnect the word line from the second voltage source, and connect the second end of the capacitor to the first voltage source. The alternate switching of the connection boosts the voltage on the word line. In a second embodiment, a first word line is electrically connected to a first switch to a first voltage source.

Abstract: A preconnectorized outdoor cable streamlines the deployment of optical waveguides into the last mile of an optical network. The preconnectorized outdoor cable includes a cable and at least one plug connector. The plug connector is attached to a first end of the cable, thereby connectorizing at least one optical waveguide. The cable has at least one optical waveguide, at least one tensile element, and a cable jacket. Various cable designs such as figure-eight or flat cables may be used with the plug connector. In preferred embodiments, the plug connector includes a crimp assembly having a crimp housing and a crimp band. The crimp housing has two half-shells being held together by the crimp band for securing the at least one tensile element. When fully assembled, the crimp housing fits into a shroud of the preconnectorized cable. The shroud aides in mating the preconnectorized cable with a complimentary receptacle.

Abstract: A single sensing transistor is selectively diode connected to a sense line that is coupled to reference cells and data cells to store a reference current or leakage currents on the gate of the sensing transistor by opening the switch to disconnect the diode connection of the sensing transistor. Other sensing systems may use two transistors and may stores leakage current. A sensing system with capacitance auto-zeroing is included. The sensing system may include a dynamic differential current differential amplifier.

Abstract: A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.

Abstract: A single sensing transistor is selectively diode connected to a sense line that is coupled to reference cells and data cells to store a reference current or leakage currents on the gate of the sensing transistor by opening the switch to disconnect the diode connection of the sensing transistor. Other sensing systems may use two transistors and may stores leakage current. A sensing system with capacitance auto-zeroing is included. The sensing system may include a dynamic differential current differential amplifier.

Abstract: A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.

Abstract: A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.

Abstract: In a receive-side scaling compatible environment, techniques to provide at least one recovery receive queue for any receive queue that is full or transferring traffic at too slow a rate.

Abstract: A test device and method may be used to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system.

Abstract: A stacked gate nonvolatile memory floating gate device has a control gate. Programming of the cell in the array is accomplished by hot channel electron injection from the drain to the floating gate. Erasure occurs by Fowler-Nordheim tunneling of electrons from the floating gate to the control gate. Finally, to increase the density, each cell can be made in a trench.

Abstract: A one-piece fiber optic receptacle is provided for aligning and optically connecting a plug ferrule with a back-side ferrule of like configuration. The fiber optic receptacle includes a receptacle housing defining an internal cavity opening through an external end and an opposed internal end, an alignment sleeve disposed within the internal cavity and received within the internal end of the receptacle housing, and a sleeve retainer removably secured to the internal end of the receptacle housing and operable for providing access to the alignment sleeve from the internal end of the receptacle housing. The fiber optic receptacle further includes biasing member supports that facilitate loading and ensure alignment of at least one biasing member during assembly and use. Tapered posts may be provided on at least one of the alignment sleeve and the sleeve retainer for retaining and guiding the at least one biasing member during assembly and use.

Abstract: A one-piece fiber optic receptacle is provided for aligning and optically connecting a plug ferrule with a back-side ferrule of like configuration. The fiber optic receptacle includes a receptacle housing defining an internal cavity opening through an external end and an opposed internal end, an alignment sleeve disposed within the internal cavity and received within the internal end of the receptacle housing, and a sleeve retainer secured to the internal end of the receptacle housing and operable for providing access to the alignment sleeve from the internal end of the receptacle housing. The alignment sleeve includes a chamfer for guiding the back-side ferrule into the alignment sleeve. The sleeve retainer has an opening and a plurality of alignment ribs disposed about the opening for permitting angular rotation of the alignment sleeve relative to the sleeve retainer during insertion of the plug ferrule and the back-side ferrule into the alignment sleeve.

Abstract: A digital multilevel non-volatile memory includes a massive sensing system that includes a plurality of sense amplifiers disposed adjacent subarrays of memory cells. The sense amplifier includes a high speed load, a wide output range intermediate stage and a low impedance output driver. The high speed load provides high speed sensing. The wide output range provides a sensing margin at high speed on the comparison node. The low impedance output driver drives a heavy noisy load of a differential comparator. A precharge circuit coupled to the input and output of the sense amplifier increases the speed of sensing. A differential comparator has an architecture that includes analog bootstrap. A reference sense amplifier has the same architecture as the differential amplifier to reduce errors in offset. The reference differential amplifier also includes a signal multiplexing for detecting the contents of redundant cells and reference cells.