Abstract: A measurement apparatus which includes a processor is provided. The processor is configured to calculate, based on a distance image of a measurement target object with at least a joint, a position of a first portion of the measurement target object which corresponds to a non-joint portion or a terminal portion, and a position of a second portion of the measurement target object different from the first portion, and calculate, based on a first line connecting the calculated positions, a joint angle related to a joint of a first measurement target of the measurement target object.

Abstract: An adaptive control device and adaptive control method, and a control device of an injection molding machine, which allow optimal adaptive control to be performed automatically and easily, while preventing a degradation of responsiveness. The adaptive control device is configured to perform feedback control in such a manner that an operation value is output based on a command value and a feedback value which is a sum of a controlled value output from a controlled target and a compensation value output from a parallel feed-forward compensator; wherein the parallel feed-forward compensator includes: an identification section which sequentially estimates a frequency response characteristic of the controlled target and an adjustment section which adjusts the compensation value based on the estimated frequency response characteristic.

Abstract: A semiconductor integrated circuit includes: a first wire through which a signal is transmitted; a second wire that is not used for signal transmission; a switch that creates or breaks an electric connection between the first wire and the second wire; and a control circuit that controls the switch according to an potential of the signal, which is transmitted through the first wire, so that part of charge stored in a first wire capacitor of the first wire moves to a second wire capacitor of the second wire and is stored in the second wire capacitor and the charge stored in the second wire capacitor are drawn to the first wire capacitor to charge the first wire capacitor.

Abstract: A method for designing a semiconductor integrated circuit includes: determining, by a designing device, first wirings over which signals are propagated and second wirings which are not used for propagation of the signals among a plurality of wirings of a semiconductor integrated circuit; and determining, by the designing device, from among the second wirings, third wirings to be used for storing electrical charges for electrical charge recycling of the first wirings for a most number of the first wirings in a range that satisfies a timing constraint based on operation rates of the signals propagated over the first wirings and delay times of the first wirings.

Abstract: A semiconductor integrated circuit includes: a first wire through which a signal is transmitted; a second wire that is not used for signal transmission; a switch that creates or breaks an electric connection between the first wire and the second wire; and a control circuit that controls the switch according to an potential of the signal, which is transmitted through the first wire, so that part of charge stored in a first wire capacitor of the first wire moves to a second wire capacitor of the second wire and is stored in the second wire capacitor and the charge stored in the second wire capacitor are drawn to the first wire capacitor to charge the first wire capacitor.

Abstract: A method for designing a semiconductor integrated circuit includes: determining, by a designing device, a first wiring over which a signal is propagated and a second wiring which is not used for a propagation of the signal among a plurality of wirings of a semiconductor integrated circuit; and determining, by the designing device, the second wiring to be used as a wiring for storing electrical charge for an electrical charge recycling of the first wiring using the most number of the first wiring in a range that satisfies a timing constraint based on an operation rate of the signal propagated over the first wiring and a delay time of the first wiring.

Abstract: An adaptive control device and adaptive control method, and a control device of an injection molding machine, which allow optimal adaptive control to be performed automatically and easily, while preventing a degradation of responsiveness. The adaptive control device is configured to perform feedback control in such a manner that an operation value is output based on a command value and a feedback value which is a sum of a controlled value output from a controlled target and a compensation value output from a parallel feed-forward compensator; wherein the parallel feed-forward compensator includes: an identification section which sequentially estimates a frequency response characteristic of the controlled target and an adjustment section which adjusts the compensation value based on the estimated frequency response characteristic.

Abstract: A golf club 2 includes a shaft 6, a tip member provided at a tip part of the shaft 6, and a rear end member attached to a rear end part of the shaft 6. The tip member includes a head 4. The rear end member includes a grip 8 and a weight member 20. The golf club has a club length of 1143 mm or more. A value of [W2/W1] is no less than 0.23 and no more than 0.32 when a weight of the tip member is W1 (g) and a weight of the rear end member is W2 (g). The weight member 20 is provided on a rear side relative to a tip position of the grip. The weight member 20 has a specific gravity larger than that of the shaft 6. The golf club 2 is a wood type golf club. Examples of materials for the weight member 20 include brass, a tungsten nickel alloy, an aluminum alloy, a tungsten alloy, a stainless alloy, stainless steel, and the like.

Abstract: A method for producing a tubular body includes a step of winding at least one of winding bias prepregs, at least one of straight prepregs, and at least one of hoop prepregs round a core. At the winding step, after the hoop prepreg and/or the hoop prepreg are adherently layered in advance on a base prepreg consisting of the bias prepreg or the straight prepreg to form a laminate and/or a laminate, the laminate and/or the laminate are wound on the core so that the hoop prepreg and/or the hoop prepreg are wound on the core integrally with the base prepreg or the base prepreg.

Abstract: A semiconductor element includes: a substrate having an integrated circuit; and a wire connection electrode and a bump connection electrode which are provided on a same main surface of the substrate as electrodes having a same connection function to the integrated circuit. The wire connection electrode is provided in a periphery of the main surface. The bump connection electrode is provided inside the wire connection electrode on the main surface. When a straight line dividing the main surface into two regions is determined, the wire connection electrode and the bump connection electrode are located opposite to each other with respect to the straight line.

Abstract: An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.

Abstract: A golf club (2) according to the present invention includes a head (4), a shaft (6) and a grip (8). A maximum thickness portion of the grip (8) is present within a range of 3 to 8 mm from a butt end. When the closest position to a tip side in the maximum thickness portion is set to be a reference position (K), a position placed apart from the reference position (K) toward the tip side by 20 mm is set to be a position (A), a position placed apart from the reference position (K) toward the tip side by 30 mm is set to be a position (B), a position placed apart from the reference position (K) toward the tip side by 50 mm is set to be a position (C), and a position placed apart from the reference position (K) toward the tip side by 200 mm is set to be a position (D), a taper ratio (T1) between the reference position (K) and the position (A) is equal to or higher than 0.255 and is equal to or lower than 0.270, a taper ratio (T2) between the position (B) and the position (C) is equal to or higher than 0.

Abstract: In a semiconductor element, upper through-hole conductor portions and lower through-hole conductor portions are formed such that pore size A of the joint surface of the upper through-hole conductor portion and the lower through-hole conductor portion is smaller than pore size B of the upper through-hole conductor portion on the major surface of the semiconductor element and pore size C of the lower through-hole conductor portion on the other surface of the semiconductor element. Further, electrode portions are formed respectively on the top surfaces of the upper through-hole conductor portions and protrusions 4 are formed respectively on the top surfaces of the electrode portions. Moreover, an optical member pressed in contact with the protrusions is fixed on the semiconductor element with an adhesive.

Abstract: A semiconductor device of the present invention includes: a base material (5); a semiconductor element (2) mounted on the base material (5); a solder resist (11a) covering a prescribed region of the base material (5); and a molding resin body (3) integrally covering the semiconductor element (2) and a part of the solder resist (11a). The solder resist (11a) has a recessed portion (16) at the bottom of the outer circumference of the molding resin body (3). The molding resin body (3) is partially embedded in the recessed portion (16).

Abstract: According to the present invention, protrusions 4 are formed on electrodes 3 of semiconductor elements 6, and an optical member 7 is secured on the semiconductor element 6 with an adhesive 8 so as to be pressed onto the protrusions 4.

Abstract: An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.

Abstract: A semiconductor device includes: a first semiconductor element; a second semiconductor element mounted on an upper surface of the first semiconductor element via an adhesive layer; a mold resin body for overmolding the first semiconductor element and the second semiconductor element; and a first spherical filler having a diameter smaller than an average thickness of the adhesive layer and a second spherical filler having a diameter larger than the average thickness of the adhesive layer, the first or second spherical filler being dispersed in the mold resin body. The mold resin body does not contain a spherical filler which has a diameter substantially equal to the average thickness of the adhesive layer.

Abstract: A golf club 2 includes a shaft 6, a tip member provided at a tip part of the shaft 6, and a rear end member attached to a rear end part of the shaft 6. The tip member includes a head 4. The rear end member includes a grip 8 and a weight member 20. The golf club has a club length of 1143 mm or more. A value of [W2/W1] is no less than 0.23 and no more than 0.32 when a weight of the tip member is W1 (g) and a weight of the rear end member is W2 (g). The weight member 20 is provided on a rear side relative to a tip position of the grip. The weight member 20 has a specific gravity larger than that of the shaft 6. The golf club 2 is a wood type golf club. Examples of materials for the weight member 20 include brass, a tungsten nickel alloy, an aluminum alloy, a tungsten alloy, a stainless alloy, stainless steel, and the like.

Abstract: An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.

Abstract: A golf club (2) according to the present invention includes a head (4), a shaft (6) and a grip (8). A maximum thickness portion of the grip (8) is present within a range of 3 to 8 mm from a butt end. When the closest position to a tip side in the maximum thickness portion is set to be a reference position (K), a position placed apart from the reference position (K) toward the tip side by 20 mm is set to be a position (A), a position placed apart from the reference position (K) toward the tip side by 30 mm is set to be a position (B), a position placed apart from the reference position (K) toward the tip side by 50 mm is set to be a position (C), and a position placed apart from the reference position (K) toward the tip side by 200 mm is set to be a position (D), a taper ratio (T1) between the reference position (K) and the position (A) is equal to or higher than 0.255 and is equal to or lower than 0.270, a taper ratio (T2) between the position (B) and the position (C) is equal to or higher than 0.