Abstract: A method for manufacturing a semiconductor device is provided. In the method, an amorphous silicon film is deposited in a recess provided in a surface of a substrate by supplying a silicon-containing gas to the substrate. The amorphous silicon film is etched by supplying an etching gas to the substrate so as to leave the amorphous silicon film on a bottom of the recess. A silicon film is deposited on the amorphous silicon film by supplying dichlorosilane to the substrate.

Abstract: With respect to a boat transfer method for transferring a boat holding a substrate into a processing chamber, the boat transfer method includes supplying a reducing gas into the processing chamber, and transferring the boat into the processing chamber in a state in which the reducing gas is present within the processing chamber.

Abstract: There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.

Abstract: There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.

Abstract: There is provided a film forming apparatus for performing a film forming process by supplying a film forming gas to a substrate in a vacuum atmosphere, comprising: a processing container in which a mounting part for mounting a substrate thereon is provided; a heating part configured to heat the substrate mounted on the mounting part; an exhaust part configured to evacuate an inside of the processing container; a cooling gas supply part configured to supply a cooling gas into the processing container; a purge gas supply part configured to supply a purge gas into the processing container; and a control part configured to output a control signal so as to execute a step of applying a stress to a thin film formed inside the processing container.

Abstract: An apparatus includes: a rotatable table for revolving a substrate mounting region on which a substrate is mounted about a rotational center thereof; a first gas supply part for supplying a source gas to a first region through injection portions formed to face the rotatable table; an exhaust part for exhausting a gas through an exhaust port; a second gas supply part for supplying a separation gas for separating inner and outer sides of a second closed path from each other; a third gas supply part including two gas injectors arranged to extend at a certain interval in the crossing direction; a plasma generation part for reaction gas for plasmarizing the reaction gas injected toward the second region; and other process regions in which processes different from the supply of the source gas and the supply of the reaction gas are performed.

Abstract: An apparatus includes: a rotatable table for revolving a substrate mounting region on which a substrate is mounted; a first gas supply part for supplying a source gas to a first region through an injection portion formed to face the rotatable table; an exhaust part for exhausting a gas through an exhaust port; a second gas supply part for supplying an separation gas for separating inner and outer sides of a second closed path from each other through an separation gas supply port formed to extend along the second closed path surrounding the exhaust port; a third gas supply part including two gas injectors arranged to extend at a certain interval in a direction crossing the revolutional direction with a second region defined outside the second closed path interposed between the gas injectors; and a plasma generation part for plasmarizing a reaction gas.

Abstract: A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.

Abstract: A film-forming method includes: mounting a substrate on a mounting table in a vacuu container; adsorbing a raw material to the substrate by supplying raw material gas containing silicon into the vacuum container; nitriding the raw material by supplying nitriding gas to a plasma formation region inside the vacuum container and supplying plasmarized gas to the substrate; forming a silicon-containing nitride film on the substrate by alternately and repeatedly performing the adsorbing a raw material and the nitriding the raw material; setting stress of the silicon-containing nitride film before the adsorbing a raw material and nitriding the raw material; and adjusting a nitriding time having a length based on first correspondence relationship between the stress of the silicon-containing nitride film and parameter corresponding to the nitriding time in the plasma formation region, and the set stress of the silicon-containing nitride film.

Abstract: A semiconductor device manufacturing method includes: a primary process of supplying a process gas to a substrate having a depression formed therein to form a third layer and filling the depression with the third layer, the substrate including a first layer whose surface is exposed as an upper surface of the substrate and a second layer formed in at least a sidewall of the depression having the sidewall and a floor surface; performing an etching process of etching the third layer to expose the upper surface, and halting the etching of the third layer while remaining the third layer formed within the depression; and performing a secondary process of supplying the process gas to the substrate to form the third layer so that the depression is filled with the third layer with no clearance.

Abstract: There is provided a film forming apparatus for performing a film forming process by supplying a film forming gas to a substrate in a vacuum atmosphere, comprising: a processing container in which a mounting part for mounting a substrate thereon is provided; a heating part configured to heat the substrate mounted on the mounting part; an exhaust part configured to evacuate an inside of the processing container; a cooling gas supply part configured to supply a cooling gas into the processing container; a purge gas supply part configured to supply a purge gas into the processing container; and a control part configured to output a control signal so as to execute a step of applying a stress to a thin film formed inside the processing container.

Abstract: A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.

Abstract: There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.

Abstract: There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.

Abstract: A semiconductor device manufacturing method includes: a primary process of supplying a process gas to a substrate having a depression formed therein to form a third layer and filling the depression with the third layer, the substrate including a first layer whose surface is exposed as an upper surface of the substrate and a second layer formed in at least a sidewall of the depression having the sidewall and a floor surface; performing an etching process of etching the third layer to expose the upper surface, and halting the etching of the third layer while remaining the third layer formed within the depression; and performing a secondary process of supplying the process gas to the substrate to form the third layer so that the depression is filled with the third layer with no clearance.

Abstract: An apparatus includes: a rotatable table for revolving a substrate mounting region on which a substrate is mounted about a rotational center thereof; a first gas supply part for supplying a source gas to a first region through injection portions formed to face the rotatable table; an exhaust part for exhausting a gas through an exhaust port; a second gas supply part for supplying a separation gas for separating inner and outer sides of a second closed path from each other; a third gas supply part including two gas injectors arranged to extend at a certain interval in the crossing direction; a plasma generation part for reaction gas for plasmarizing the reaction gas injected toward the second region; and other process regions in which processes different from the supply of the source gas and the supply of the reaction gas are performed.

Abstract: An apparatus includes: a rotatable table for revolving a substrate mounting region on which a substrate is mounted; a first gas supply part for supplying a source gas to a first region through an injection portion formed to face the rotatable table; an exhaust part for exhausting a gas through an exhaust port; a second gas supply part for supplying an separation gas for separating inner and outer sides of a second closed path from each other through an separation gas supply port formed to extend along the second closed path surrounding the exhaust port; a third gas supply part including two gas injectors arranged to extend at a certain interval in a direction crossing the revolutional direction with a second region defined outside the second closed path interposed between the gas injectors; and a plasma generation part for plasmarizing a reaction gas.

Abstract: A film forming apparatus, which forms a thin film formed of a metal oxide on a substrate by alternately supplying a raw material gas formed of an organic material containing a metal and an oxidation gas for oxidizing the organic material to the substrate a plurality of times, within a reaction vessel under a vacuum atmosphere, is provided. A control part outputs a control signal for comparing a moisture concentration detected by a moisture detection part with a set value after initiation of a step of supplying the oxidation gas and before starting a step of supplying the raw material gas, and when the moisture concentration exceeds a set value, for increasing a substitution operation of an atmosphere substitution step.

Abstract: A film forming apparatus, which forms a thin film formed of a metal oxide on a substrate by alternately supplying a raw material gas formed of an organic material containing a metal and an oxidation gas for oxidizing the organic material to the substrate a plurality of times, within a reaction vessel under a vacuum atmosphere, is provided. A control part outputs a control signal for comparing a moisture concentration detected by a moisture detection part with a set value after initiation of a step of supplying the oxidation gas and before starting a step of supplying the raw material gas, and when the moisture concentration exceeds a set value, for increasing a substitution operation of an atmosphere substitution step.

Abstract: A film deposition method is provided. A first metal compound film is deposited by performing a first cycle of exposing a substrate to a first source gas containing a first metal, and of exposing the substrate to a reaction gas reactive with the first source gas. Next, the first source gas is adsorbed on the first metal compound film by exposing the substrate having the first metal compound film deposited thereon to the first source gas. Then, a second metal compound film is deposited on the substrate by performing a second cycle of exposing the substrate having the first source gas adsorbed thereon to a second source gas containing a second metal, and of exposing the substrate to the reaction gas reactive with the second source gas.