Abstract: A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of sequentially supplying the first process gas and the second process gas to the substrate once each cycle. A cycle time of the cycle is set equal to or shorter than 0.5 seconds.

Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.

Abstract: A film deposition method includes rotating a rotary table by a first angle while supplying a separation gas from a separation gas supplying part and a first reaction gas from a first gas supplying part; supplying a second reaction gas from a second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; and supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas and the first reaction gas.

Abstract: A film deposition method includes a first step and a second step. In the first step, a first reaction gas is supplied from a first gas supply part to a first process area, and a second reaction gas capable of reacting with the first reaction gas is supplied from a second gas supply part to a second process area, while rotating a turntable and supplying a separation gas to separate the first process area and the second process area from each other. In the second step, the second reaction gas is supplied from the second gas supply part to the second process area without supplying the first reaction gas from the first gas supply part for a predetermined period, while rotating the turntable and supplying the separation gas to separate the first process area and the second process area from each other.

Abstract: A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of sequentially supplying the first process gas and the second process gas to the substrate once each cycle. A cycle time of the cycle is set equal to or shorter than 0.5 seconds.

Abstract: A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.

Abstract: A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.

Abstract: A film deposition apparatus includes a turntable; a first process gas supply portion; a gas nozzle that supplies a second process gas; a nozzle cover that is provided to cover the gas nozzle; a separation gas supply portion, wherein the nozzle cover includes an upper plate portion, and an upstream sidewall portion and a downstream sidewall portion that extend downward from upstream and downstream edge portions of the upper plate portion in a rotational direction of the turntable, respectively, wherein an inner surface of the upstream sidewall portion is formed as an inclined surface that is inclined with respect to a surface of the turntable, and wherein an angle ?1 between the inner surface of the upstream sidewall portion and the surface of the turntable is smaller than an angle ?2 between an inner surface of the downstream sidewall portion and the surface of the turntable.

Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.

Abstract: A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.

Abstract: A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.

Abstract: A film deposition method includes rotating a rotary table by a first angle while supplying a separation gas from a separation gas supplying part and a first reaction gas from a first gas supplying part; supplying a second reaction gas from a second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; and supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas and the first reaction gas.

Abstract: A film deposition method is provided. A first metal compound film is deposited by performing a first cycle of exposing a substrate to a first source gas containing a first metal, and of exposing the substrate to a reaction gas reactive with the first source gas. Next, the first source gas is adsorbed on the first metal compound film by exposing the substrate having the first metal compound film deposited thereon to the first source gas. Then, a second metal compound film is deposited on the substrate by performing a second cycle of exposing the substrate having the first source gas adsorbed thereon to a second source gas containing a second metal, and of exposing the substrate to the reaction gas reactive with the second source gas.

Abstract: A film deposition method includes a first step and a second step. In the first step, a first reaction gas is supplied from a first gas supply part to a first process area, and a second reaction gas capable of reacting with the first reaction gas is supplied from a second gas supply part to a second process area, while rotating a turntable and supplying a separation gas to separate the first process area and the second process area from each other. In the second step, the second reaction gas is supplied from the second gas supply part to the second process area without supplying the first reaction gas from the first gas supply part for a predetermined period, while rotating the turntable and supplying the separation gas to separate the first process area and the second process area from each other.

Abstract: The object of the present invention is to increase the crystallization temperature of a hafnium compound film which can be effectively used as a high dielectric constant film of a gate oxide film of a MOSFET, for example. A hafnium silicate film is deposited on a substrate by reacting a vapor of a hafnium organic compound with a monosilane gas or a disilane gas in a reaction vessel in a heated vacuum atmosphere. Due to the crystallization restraining effect of silicon, the thus obtained film has a higher crystallization temperature. In another embodiment of the present invention, an oxygen-containing hafnium compound film is annealed in a heated ammonia gas atmosphere. The annealing also increase the crystallization temperature of the oxygen-containing hafnium compound film.

Abstract: In a decompressed atmosphere and a heating atmosphere, a vapor of a hafnium organic compound is reacted with, e.g., a disilane gas in a reacting vessel, so as to form a hafnium silicate film on a silicon film. By reacting a dichlorosilane gas with a dinitrogen oxide gas, a silicon oxide film as a barrier layer is laminated on the hafnium silicate film. A polysilicon film as a gate electrode is formed on the silicon oxide film.

Abstract: A method for processing a target substrate (10) in a semiconductor processing apparatus (1) controls temperature of a first substrate (10) at a process temperature inside a process container (2), while supplying a process gas into the process container, thereby subjecting the first substrate to a semiconductor process, during which a by-product film is formed inside the process container. After the semiconductor process and unload of the first substrate (10) out of the process container (2), a reforming gas is supplied into the process container, thereby subjecting the by-product film to a reformation process, which is set to reduce thermal reflectivity of the by-product film. After the reformation process, temperature of a second substrate (10) is controlled at the process temperature inside the process container (2), while supplying the process gas into the process container, thereby subjecting the second substrate to the semiconductor process.

Abstract: In a decompressed atmosphere and a heating atmosphere, a vapor of a hafnium organic compound is reacted with, e.g., a disilane gas in a reacting vessel, so as to form a hafnium silicate film on a silicon film. By reacting a dichlorosilane gas with a dinitrogen oxide gas, a silicon oxide film as a barrier layer is laminated on the hafnium silicate film. A polysilicon film as a gate electrode is formed on the silicon oxide film.

Abstract: In order to form a film on a surface of a semiconductor wafer, a multiplicity of wafers are individually mounted on ring-shaped mounts of a wafer boat, while the temperature within a reaction tube is set at, e.g., 400.degree. C. under a nitrogen gas atmosphere. After loading the wafer boat into the reaction tube, the temperature within the reaction tube is raised up to, e.g., 620.degree. C. at a rate of, e.g., 100.degree. C./min, and SiH.sub.4 gas is supplied onto the surface of a silicon substrate to form a polysilicon film. After film formation, air is forced to flow along the internal surface of the heating section to forcibly cool the interior of the reaction tube. In the case of forming a metal silicon film using a wafer having a silicon substrate and a metal film formed on the surface of the silicon substrate, the temperature within the reaction tube is set at, e.g. 100.degree. C. for loading the wafers.